• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.1057-1059
• /
• 2002

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at $300^{\circ}C$ in oxygen ambient pressure. Electrical properties of the films were improved slightly than ZnO thin film without Si layer. Also, the optical and structural properties changed by Si layer in ZnO thin film. The optical and structural properties of Si-doped ZnO thin films were characterized by PL(Photoluminescence) and XRD(X-ray diffraction method) respectively. Electrical properties were measured by van der Pauw Hall measurements.

• 전기학회논문지
• /
• 제65권3호
• /
• pp.445-451
• /
• 2016

General fuse elements of solution for fast acting operation characteristics made using silver or silver alloy, those are not able to dominate cost competition to the advanced global leaders that have not only high technology but competitive price. In this study, the method that compose the fuse elements manufactured solution of fast acting operation characteristics by using precision multi-layer thin film plating and helical cutting process from low-priced copper metal. Furthermore, in order to move rated current line of fuse due to the heat loses, the manufacture construction method of fixed resistor is introduced, and then Ni-P plating layer and Sn plating layer are introduced multiply for controling fine opening time characteristics. So this study can establish the high productive and low-priced production method.

• 한국재료학회지
• /
• 제26권3호
• /
• pp.160-165
• /
• 2016

To increase the capacitance of an Al electrolytic capacitor, the anodic oxide film, $Al_2O_3$, was partly replaced by an $Al_2O_3-ZrO_2$ (Al-Zr) composite film prepared by the vacuum infiltration method and anodization. The microstructure and composition of the prepared samples were investigated by scanning electron microscopy and transmission electron microscopy. The coated and anodized samples showed multi-layer structures, which consisted of an inner Al hydrate layer, a middle Al-Zr composite layer, and an outer $Al_2O_3$ layer. The thickness of the coating layer could go up to 220 nm when the etched Al foil was coated 8 times. The electrical properties of the samples, such as specific capacitance, leakage current, and withstanding voltages, were also characterized after anodization at 100 V and 600 V. The capacitances of samples with $ZrO_2$ coating were 36.3% and 27.5% higher than those of samples without $ZrO_2$ coating when anodized at 100 V and 600 V, respectively.

• 대한금속재료학회지
• /
• 제49권2호
• /
• pp.192-196
• /
• 2011

The multi-layered thin film with an ITO/Ag/ITO structure was produced on PET by using magnetron reactive sputtering method. First, 30 nm of ITO thin film was coated on PET by using normal temperature process. Then 20-52 nm of the Ag thin film was coated. Lastly, 30 nm of ITO thin film was coated on Ag layer. The sample of the 20 nm Ag thin film showed more than 70% transmission and a $2.7{\Omega}/{\Box}$ sheet resistance. When compared to the existing single-layered transparent conducting thin film, multi-layered film was found to be superior with about $5{\Omega}/{\Box}$ less sheet resistance. However, since the Ag layer became thinner, the band gap energy needs to be increased to more than 3.5 eV.

• 한국진공학회지
• /
• 제7권1호
• /
• pp.59-65
• /
• 1998

13.56MHz를 사용하는 r.f.PACVD(Plasma assisted chemical vapor deposition)방법 으로 다층 다이아몬드상 카본(DLC)필름을 Si wafer기판 위에 합성하였다. 다층 DLC필름은 2.5$\mu$m두께의 순수한 DLC필름과 0.2$\mu$m두께의 Si이 함유된 Si-DLC필름으로 구성되었으 며, ball on disk type의 tribometer를 이용하여 대기 중에서 다층 DLC필름의 마모거동을 고 찰하였다. 표면층으로 합성된 Si-DLC필름내의 Si함량이 증가함에 따라 다층 DLC필름과 AISI52100 steel ball 사이에 0.1 이하의 낮은 마찰계수를 유지하는 기간이 증가하였다. 44,000cycle과 158,400cycle의 마모실험 후 측정된 다층 DLC필름의 마모율은 각각 $2.5\times10^{-8}\sim1.8\times10^{-7}\textrm{mm}^3$/rev.과 $7.1\times10^{-9}\sim1.8\times10^{-8}\textrm{mm}^3$/rev.로 나타났다. 158,400cycle의 마모실험 후 측정된 마모율은 내마모 특성이 우수한 DLC필름보다도 2배 정도 우수한 것으로 나타났 다. 마모시험에 의해 형성된 debris의 조성을 분석한 결과, 이런 낮은 마찰계수와 우수한 내 마모 특성은 steel ball의 wear 표면을 덮고 있는 Si oxide debris층의 형성에 따른 결과로 판단되었다. 또한, 이러한 steel ball의 wear scar표면에 형성된 debris층을 제거하여도, 새로 운 Si oxide debris층이 wear scar표면에 다시 생성되어 낮은 마찰계수를 유지하고 있었다.

• Transactions on Electrical and Electronic Materials
• /
• 제3권4호
• /
• pp.27-31
• /
• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.112-113
• /
• 2006

In this paper. we investigated a characteristic of holographic grating data erasure with non-polarized beam at amorphous chalcogenide As-Ge-Se-S thin film. A sample of holographic grating data was formed with DPSS laser for setup. Then, the erasure process was performed with He-Ne laser vertically at sample. As-Ge-Se-S(single layer). Ag/As-Ge-Se-S(double layer) and As-Ge-Se-S/Ag/As-Ge-Se-S(multi-layer) are manufactured to compare their characteristic of erasure.

• 한국항행학회논문지
• /
• 제16권6호
• /
• pp.1038-1043
• /
• 2012

본 연구에서는 재구성 RF 회로 설계 응용을 위해 BZN/BST/BZN 다층 유전체를 이용한 고-가변 커패시터를 설계 및 그 특성을 측정하였다. 고-가변 특성의 BST계 강유전체와 저-손실 특성의 BZN계 상유전체를 이용하여 47%의 가변성과 0.005의 $tan{\delta}$ 값을 갖는 저-손실 고-가변 BZN/BST/BZN 다층 유전체를 제작하였다. 이 다층 유전체를 이용하여 quartz 기판 위에 $327{\times}642{\mu}m2$ 크기로 제작된 가변 커패시터 칩은 15 V의 인가전압과 800 MHz 주파수에서 Q-factor가 10이고 60 %의 가변율을 달성하였다.

• 한국세라믹학회지
• /
• 제47권5호
• /
• pp.461-466
• /
• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• 접착 및 계면
• /
• 제20권3호
• /
• pp.102-109
• /
• 2019

PET기재 필름 위에 코팅된 다층박막 필름의 층별성분을 ATR FT-IR과 Pyro GC/MS(Gas Chromatography/Mass Spectroscopy)를 이용하여 분석을 시도하였다. 필름의 단면은 액체질소에 담근 후 파괴시켜 얻었으며 광학 현미경을 이용하여 관찰하였다. 이 결과 코팅층의 총 두께는 $70{\mu}m$였으며 3개의 층으로 관찰되었다. 각 층의 두께는 너무 얇기 때문에 표면층을 제외하고는 직접분석이 어려워 적절한 용매로서 각 층을 드러나게 한 후 ATR FT-IR과 pyro-GC/MS를 이용하여 분석을 시도하였다. 이 결과 3개 층은 공통적으로 우레탄-아크릴레이트 공중합체로 밝혀졌다. 또한 무기 혹은 금속성분의 첨가여부는 XPS와 SEM-EDAX를 이용하여 분석하였으며 도장층 (1)에는 나노크기의 실리카 입자가 도장층 (2)에서는 알루미늄 박편이 존재함을 알게 되었다.