Journal of Advanced Navigation Technology (한국항행학회논문지)

The Korean Navigation Institute (한국항행학회)
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High-Tunable Capacitor Using a Multi-Layer Dielectric Thin Film for Reconfigurable RF Circuit Applications

재구성 RF 회로 응용을 위한 다층유전체 박막을 이용한 고-가변형 커패시터

  • Lee, Young-Chul (Department of Electronics, Mokpo National Maritime University) ;
  • Lee, Baek-Ju (Department of Materials Science and Engineering, Ajou University) ;
  • Ko, Kyung-Hyun (Department of Materials Science and Engineering, Ajou University)
  • 이영철 (목포해양대학교 전자공학과) ;
  • 이백주 (아주대학교 재료공학과) ;
  • 고경현 (아주대학교 재료공학과)
  • Received : 2012.10.18
  • Accepted : 2012.12.30
  • Published : 2012.12.31
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Abstract

In this work, a high tunable capacitor using a multi-layer dielectric of BZN/BST/BZN is designed and characterized for reconfigurable RF applications. By utilizing a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film, a multi-layer dielectric of BZN/BST/BZN obtained a tunability of 47 % and $tan{\delta}$ of 0.005. The fabricated tunable capacitor on a quartz wafer using this multi-layer dielectric achieved a Q-factor of 10 and tunability of 60 % at 800 MHz and 15 V. Its size is $327{\times}642{\mu}m2$.

본 연구에서는 재구성 RF 회로 설계 응용을 위해 BZN/BST/BZN 다층 유전체를 이용한 고-가변 커패시터를 설계 및 그 특성을 측정하였다. 고-가변 특성의 BST계 강유전체와 저-손실 특성의 BZN계 상유전체를 이용하여 47%의 가변성과 0.005의 $tan{\delta}$ 값을 갖는 저-손실 고-가변 BZN/BST/BZN 다층 유전체를 제작하였다. 이 다층 유전체를 이용하여 quartz 기판 위에 $327{\times}642{\mu}m2$ 크기로 제작된 가변 커패시터 칩은 15 V의 인가전압과 800 MHz 주파수에서 Q-factor가 10이고 60 %의 가변율을 달성하였다.

Keywords

References

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