• Title/Summary/Keyword: monolithic 3D

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Investigation of the electrical characteristics of monolithic 3-dimensional static random access memory consisting of feedback field-effect transistor (피드백 전계 효과 트랜지스터로 구성된 모놀리식 3차원 정적 랜덤 액세스 메모리 특성 조사)

  • Oh, Jong Hyeok;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.115-117
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    • 2022
  • The electrical characteristics of the monolithic 3-dimensional static random access memory consisting of a feedback field-effect transistor (M3D-SRAM-FBFET) was investigated using technology computer-aided design (TCAD). The N-type FBFET and N-type MOSFET are designed with fully depleted silicon on insulator (FDSOI), and those are located at bottom and top tiers, respectively. For the M3D-SRAM-FBFET, as the supply voltage decreased from 1.9 V to 1.6 V, the reading on-current decreased approximately 10 times.

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AC Electrical Coupling of Monolithic 3D Inverter Consisting of Junctionless FET (Junctionless FET로 구성된 적층형 3차원 인버터의 AC 특성에 대한 연구)

  • Kim, Kyung-won;Ahn, Tae-Jun;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2017.05a
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    • pp.529-530
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    • 2017
  • Electrical coupling of monolithic 3D inverter(M3D-INV) consisting of Junctionless FET(JLFET) was investigated. Depending on the thickness of Inter Layer Dielectirc (ILD) between top and bottom JLFETs, $N_{gate}-N_{gate}$ capacitance and transconductance $g_m$ are changed by the gate voltage of bottom JLFET. Therefore, when using a stacked structure with the ILD below tens nm, AC electrical coupling between two transistors in M3D-INV should be considered.

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Comparison of Electrical Coupling of Monolithic 3D Inverter with MOSFET and JLFET (MOSFET와 JLFET의 3차원 인버터 전기적 상호작용의 비교)

  • Ahn, Tae-Jun;Choi, Bum Ho;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.05a
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    • pp.173-174
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    • 2018
  • This paper compared the electrical coupling of the monolithic 3D inverter consisting of MOSFET and JLFET. In the case of both the MOSFET and the JLFET, MOSFET and JLFET have a small threshold voltage variation when the thickness of inter-layer dielectric (ILD) = 100 nm. However, when the thickness of ILD = 10 nm, the threshold voltage variation is larger and the JLFET is twice as much as the MOSFET.

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Fabrication of complete denture using conventional method and monolithic digital denture system: a case report (전통적 제작법과 모놀리식(monolithic) 디지털 의치 시스템을 이용한 상·하악 총의치 동시 수복 증례)

  • Young-Baek Park;Ga-Hyun Lee;Young-Gyun Song
    • The Journal of Korean Academy of Prosthodontics
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    • v.62 no.1
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    • pp.6-19
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    • 2024
  • With the advancement of Computer-Aided Design/Computer-Aided Manufacturing (CAD-CAM) technology, fabrication of dentures using this technology has gained popularity. As one of CAD-CAM technologies, digital complete denture system has been introduced, which fabricates complete dentures using subtractive manufacturing of monolithic block containing both the color of a denture base and an artificial tooth. In this case, two pairs of upper and lower dentures were fabricated for two patients. Two pairs of complete dentures were fabricated for a 74-year-old male and a 73-year-old female respectively by conventional denture fabrication method and digital method of milling. To obtain a digital complete denture, monolithic block (Ivotion, Ivoclar Vivadent, Schaan, Liechtenstein) was chosen for the materials to fabricate the digital complete dentures. An individual tray was designed using CAD software and manufactured by 3D printing technique. The final impression and interocclusal relationship were recorded using the fabricated individual tray. The final impression was scanned, and the complete denture design and try-in denture were 3D printed using CAD-CAM software. Subsequently, the monolithic block was milled, and the final dentures were fabricated and tried on patients. Previously mentioned two patient cases compared and analyzed stability, fit, speaking, mastication, aesthetics, and patient satisfaction of two pairs of dentures: one fabricated using CAD-CAM system and the other using traditional methods. This was performed to evaluate and report the findings from both denture-making approaches.

A Ku-Band 5-Bit Phase Shifter Using Compensation Resistors for Reducing the Insertion Loss Variation

  • Chang, Woo-Jin;Lee, Kyung-Ho
    • ETRI Journal
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    • v.25 no.1
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    • pp.19-24
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    • 2003
  • This paper describes the performance of a Ku-band 5-bit monolithic phase shifter with metal semiconductor field effect transistor (MESFET) switches and the implementation of a ceramic packaged phase shifter for phase array antennas. Using compensation resistors reduced the insertion loss variation of the phase shifter. Measurement of the 5-bit phase shifter with a monolithic microwave integrated circuit demonstrated a phase error of less than $7.5{\circ}$ root-mean-square (RMS) and an insertion loss variation of less than 0.9 dB RMS for 13 to 15 GHz. For all 32 states of the developed 5-bit phase shifter, the insertion losses were $8.2{\pm}1.4$dB, the input return losses were higher than 7.7 dB, and the output return losses were higher than 6.8 dB for 13 to 15 GHz. The chip size of the 5- bit monolithic phase shifter with a digital circuit for controlling all five bits was 2.35 mm ${\times}$1.65 mm. The packaged phase shifter demonstrated a phase error of less than $11.3{\circ}$ RMS, measured insertion losses of 12.2 ${\pm}$2.2 dB, and an insertion loss variation of 1.0 dB RMS for 13 to 15 GHz. For all 32 states, the input return losses were higher than 5.0 dB and the output return losses were higher than 6.2 dB for 13 to 15 GHz. The size of the packaged phase shifter was 7.20 mm${\times}$ 6.20 mm.

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A Monolithic 5 GHz Image Reject Mixer for Wireless LAN applications

  • Ho-Young Kim;Jae-Hyun Cho;Jung-Ho Park
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.26 no.12B
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    • pp.1733-1740
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    • 2001
  • A monolithic 5 GHz image reject mixer using a 0.5-m GaAs MESFET technology is designed and simulated. The Mixer exhibits a 13.56 dB down-conversion gain, a SSB (Single SideBand) noise figure of 11.91 dB, an input IP3 (third order intercept point) of -3.73 dBm and a PldB (1-dB compression point) of -11.0 dBm. The critical issue in the image reject mixer is the phase accuracy and magnitude balance of the 90 phase shifting network. The proposed image reject mixer realizes a 90 phase shifter on chip. This phase shifting network does not need any phase adjusting to achieve the phase error specification of 3 over a frequency range from 800 MHz to 1GHz. The simulated overall image rejection ratio is better than 50 dB.

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Artificial teeth displacement of monolithic complete denture manufactured by 3D printer and milling machine (3차원 적층 출력과 밀링에 의해 제작된 일체형 의치의 인공치 변위 평가)

  • Kwak, Young-Hun;Lee, Sea-Han;Lee, Gyeong-Je;Kim, Hee-Jung
    • The Journal of Korean Academy of Prosthodontics
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    • v.55 no.4
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    • pp.394-402
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    • 2017
  • Purpose: The purpose of this study is to evaluate the displacement of artificial tooth of monolithic complete denture manufactured by milling and 3D printing method in which the denture base and the artificial teeth are simultaneously made. Materials and methods: Twelve upper and lower complete dentures for each were made by milling and 3D printing method. Group Up and Group Lp are a group of upper and lower dentures made by printing, and Group Um and Group Lm are denture groups made by milling. Group Uc and Group Lc are is a group of finally designed upper and lower dentures respectively. Measurements were performed between both central incisors (AB, ab), both canines (CD, cd), both first molars (EF, ef), between an incisor and a first molar (AE, ae), and between incisor and lingual point (AG, ag) for each upper and lower denture. Results: AG and ag value between printed dentures and original ones as well as between milled dentures and original ones showed a statistically significant difference (One-way ANOVA, P<.05) in both lower and upper monolithic dentures. In the lower monolithic ones, ab, cd and ef value revealed a significant difference between Group Lp and Group Lm (One-way ANOVA, P<.05). Conclusion: Dentures made using milling or 3D printers revealed statistically significant difference compared with those of original data. However, it showed clinically very accurate reproducibility.

A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology

  • Campos-Roca, Y.;Tessmann, A.;Massler, H.;Leuther, A.
    • ETRI Journal
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    • v.33 no.5
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    • pp.818-821
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    • 2011
  • A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

Evaluation of reliability of zirconia materials to be used in implant-retained restoration on the atrophic bone of the posterior maxilla: A finite element study

  • Degirmenci, Kubra;Kocak-Buyukdere, Ayse;Ekici, Bulent
    • The Journal of Advanced Prosthodontics
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    • v.11 no.2
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    • pp.112-119
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    • 2019
  • PURPOSE. Zirconia materials have been used for implant-retained restorations, but the stress distribution of zirconia is not entirely clear. The aim of this study is to evaluate the stress distribution and risky areas caused by the different design of zirconia restorations on the atrophic bone of the posterior maxilla. MATERIALS AND METHODS. An edentulous D4-type bone model was prepared from radiography of an atrophic posterior maxilla. Monolithic zirconia and zirconia-fused porcelain implant-retained restorations were designed as splinted or non-splinted. 300-N occlusal forces were applied obliquely. Stress analyses were performed using a 3D FEA program. RESULTS. According to stress analysis, the bone between the 1) molar implant and the 2) premolar in the non-splinted monolithic zirconia restoration model was stated as the riskiest area. Similarly, the maximum von Mises stress value was detected on the bone of the non-splinted monolithic zirconia models. CONCLUSION. Splinting of implant-retained restorations can be more critical for monolithic zirconia than zirconia fused to porcelain for the longevity of the bone.

A study on the HF monolithic ceramic filter using thickness mode (두께진동모드를 이용한 고주파대역의 단일체 세라믹필터에 대한 연구)

  • Park, Chang-Yub;Wi, Gyu-Jin;Lee, Doo-Hee
    • Proceedings of the KIEE Conference
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    • 1987.11a
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    • pp.242-244
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    • 1987
  • Using the energy trapping theory and the acoustic coupling theory. the Bandpass filter(center frequency = 10.7 MHz) of the fundamental thickness mode was made from the composition of $Pb_{0.96}Sr_{0.04}(Zr_{0.53}Ti_{0.47})O_3$+ 1wt% $Fe_2O_3$. Also, in the double mode monolithic filter, It was observed that as decreasing the size of the electrodes, or shortening the gap between two electrodes, the percent frequency separation was increased. Based on these. a 10.7 MHz uniwafer filter was made having the characteristics that bandwidth was 700 KHz and the percent frequency separation was 6 [dB] and selectivity was 29 [dB], end spurious response was 24 [dB] and insertion loss was 7 [dB].

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