• Journal of Convergence Society for SMB
• /
• v.6 no.4
• /
• pp.59-64
• /
• 2016

6LoWPAN (IPv6 over Low Power Wireless Sensor Network) standardized by IETF does not support the mobility of wireless sensor nodes. Since the wireless sensor node, subject to a lot of constraints in the CPU, memory, a battery is not easy to apply to existing protocols such as Mobile IPv6. In this paper, we propose a novel mobility management architecture and methods to work with 6LoWPAN based on the analysis on FPMIPv6 (Fast PMIPv6) the host is not a handover procedure performed in order to support the mobility of such sensor nodes. It was suggested the use of a dispatch code pattern that is not currently used in 6LoWPAN for inter-working, MAG and MAC, MAC in order to reduce packet loss caused as the authentication delay in the handover process to minimize the power consumption of a sensor node that is caused by the re-transmission the new concept of temporary guarantee (temporary guarantee) and trust relationships (trust relationship) between AAA and introduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.346-346
• /
• 2010

A capacitorless one transistor dynamic random access memory (1T-DRAM) on silicon-germanium-on-insulator substrate was investigated. SGOI technology can make high effective mobility because of lattice mismatch between the Si channel and the SiGe buffer layer. To evaluate memory characteristics of 1T-DRAM, the floating body effect is generated by impact ionization (II) and gate induced drain leakage (GIDL) current. Compared with use of impact ionization current, the use of GIDL current leads to low power consumption and larger sense margin.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.67-67
• /
• 2012

Graphene, two-dimensional one-atom-thick planar sheet of carbon atoms densely packed in a honeycomb crystal lattice, exhibits fascinating electrical properties, such as a linear energy dispersion relation and high mobility in addition to a wide-range optical absorption and high thermal conductivity. Graphene's outstanding tensile strength allows graphene-based electronic and photonic devices to be flexible, bendable, or even stretchable. Recently many groups have reported high performance electronic and optoelectronic devices based on graphene materials, i.e. field-effect transistors, gas sensors, nonvolatile memory devices, and plasmonic waveguides, in which versatile properties of graphene materials have been incorporated into a flexible electronic or optoelectronic platform. However, there are several fundamental or technological hurdles to be overcome in real applications of graphene in electronics and optoelectronics. In this tutorial we will present a short introduction to the basic material properties and recent progresses in applications of graphene to electronics and optoelectronics and discuss future outlook of graphene-based devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.95-96
• /
• 2009

A fully depleted capacitorless 1-transistor dynamic random access memory (FD 1T-DRAM) based on a sSOI strained-silicon-on-insulator) wafer was investigated. The fabricated device showed excellent electrical characteristics of transistor such as low leakage current, low subthreshold swing, large on/off current ratio, and high electron mobility. The FD sSOI 1T-DRAM can be operated as memory device by the floating body effect when the substrate bias of -15 V is applied, and the FD sSOI 1T-DRAM showed large sensing margin and several milli seconds data retention time.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.151-151
• /
• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.06a
• /
• pp.63-66
• /
• 1998

Prototype MFSFET′s using ferroelectric oxide LiNbO$_3$ as a gate insulator have been successfully fabricated with the help of 2 sheets of metal masks and demonstrated nonvolatile memory operations of the MFSFET′s. The estimated field-effect electron mobility and transconductance on a linear region of the fabricated FET were 600 $\textrm{cm}^2$/V.s and 0.16 mS/mm, respectively. The drain current of the "on" state was more than 4 orders of magnitude larger than the "off" state current at the same "read" gate voltage of 0.5 V, which means the memory operation of the MFSFET. A write voltage as low as $\pm$3 V, which is applicable to low power integrate circuits, was used for polarization reversal.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.396-396
• /
• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.46 no.5
• /
• pp.32-38
• /
• 2009

FTT(Fast Fourier Transform) processor is widely used in OFDM(Orthogonal Frequency Division Multiplesing) system. Because of the increased requirement of mobility and bandwidth in the OFDM system, they need large point FTT processor. Since the size of memory which stores the twiddle factor coefficients are proportional to the N of FFT size, we propose a new method by which we can reduce the size of the coefficient memory. In the proposed method, we exploit a counter and unsigned multiplier to generate the twiddle factor indices. To verify the proposed algorithm, we design TFCGs(Twiddle Factor Coefficient Generator) for 1024pint FFTs with R2SDF(Radix-2 Single-Path Delay Feedback), $R2^3SDF,\;R2^3SDF,\;R2^4SDF$ architectures. The size of ROM is reduced to 1/8N. In the case of $R2^4SDF$ architecture, the area and the power are reduced by 57.9%, 57.5% respectively.

• The Journal of Society for e-Business Studies
• /
• v.8 no.2
• /
• pp.33-48
• /
• 2003

Wireless Internet, created through the merging of mobile communication with Internet technology, provides the advantage of mobility, but the restrictions of the mobile environment are deterring it from growing into a mass public service. Of the restricting factors of the wireless environment, narrow memory space creates the disadvantage of not being able to manage resources in mobile devices efficiently Because there is a limit to obtaining sufficient memory space from hardware made with consideration of portability, future devices will need to have a platform design with storage area extended from internal storage to external storage space. In this paper, we present a mobile agent that extends the memory space from only the inside of a mobile device to an external server making it possible to use data by on-line Run-time, and can also manage internal files efficiently. We have designed and implemented a RMS(Resources Management System) as a realization. Devices using the proposed RMS will be able to apply extended processes with the 'Mobile Space Extension' and will be benefited with optimal memory space through efficient internal file management.

• Journal of Korea Multimedia Society
• /
• v.13 no.6
• /
• pp.901-910
• /
• 2010

$IP^2$, as an extended concept of the next generation IMT network, is a concept of basically supporting mobility using two steps of IP address (i.e. IPha (IP Host address) and IPra (IP routing address)) in IP backbone network. Current $IP^2$system has a shortcoming of excess usage of network resources caused by sending paging messages to all cells in LA (Location Area) in paging procedure. Considering the evolving direction of network, which is taking mobility with various speed and integration of devices into consideration, this shortcoming must be overcome. In this paper, we proposed a method to reduce time and memory for paging by maintaining current information of MN (Mobile Node) not in Active state with proxy server. Performance evaluation based on NS-2 simulations has shown that the efficiency of network resources is improved in the proposed method.