Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2013.02a
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- Pages.396-396
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- 2013
Resistive Switching Effect of the $In_2O_3$ Nanoparticles on Monolayered Graphene for Flexible Hybrid Memory Device
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Lee, Dong Uk
(Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
- Kim, Dongwook (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
- Oh, Gyujin (Department of Physics and Research Institute for Natural Sciences, Hanyang University) ;
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Kim, Eun Kyu
(Department of Physics and Research Institute for Natural Sciences, Hanyang University)
- Published : 2013.02.18
Abstract
The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to