Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.151-151
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- 2010
Electrical characteristics of poly-Si NVM by using the MIC as the active layer
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Cho, Jae-Hyun
(School of Information and Communication Engineering, Sungkyunkwan University) ;
- Nguyen, Thanh Nga (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Jung, Sung-Wook
(School of Information and Communication Engineering, Sungkyunkwan University) ;
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Yi, Jun-Sin
(School of Information and Communication Engineering, Sungkyunkwan University)
- Published : 2010.02.17
Abstract
In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of
Keywords