• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.35-38
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.l8um semiconductor device. Through reverse moat pattern process, reduced moat density at high moat density, STI CMP process with low selectivity could be to fit polish uniformity between low moat density and high moat density. Because this reason, in-situ motor current end point detection method is not fit to the current EPD technology with the reverse moat pattern. But we use HSS without reverse moat pattern on STI CMP and take end point current sensing signal.[1] To analyze sensing signal and test extracted signal, we can to adjust wafer difference within $110{\AA}$.

• 건축역사연구
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• 제32권3호
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• pp.21-30
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• 2023

The Wolseong Wooden moat is a unique example. Which is a vertical wall made of wood. It shows a changing point how to make the wall by digging a hole and stacking stones vertically. This study tried to to make a assumption about the construction process of the wooden structure found in the Wolseong pit moat. I sorted out wooden elements and then analyzing these features and compared with the results of the excavation. After I made 3D modelling in the order to it was made. This moat is not only a function of digging up the ground to trap water, but also a technique of building structures to maintain walls. It is a valuable material that can show the woodworking engineering techniques of the Silla Dynasty.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.14-17
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• 2000

The rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STi CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. We studied the current sensing method in STI-CMP with the reverse moat pattern.

• KIEE International Transactions on Electrophysics and Applications
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• 제2C권5호
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• pp.262-267
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• 2002

In this paper, we first studied the factors affecting the motor current (MC) signal, which was strongly affected by the systematic hardware noises depending on polishing such as pad conditioning and arm oscillation of platen and recipe, head motor. Next, we studied the end point detection (EPD) for the chemical mechanical polishing (CMP) process of shallow trench isolation (STI) with reverse moat structure. The MC signal showed a high amplitude peak in the fore part caused by the reverse meal. pattern. We also found that the EP could not be detected properly and reproducibly due to the pad conditioning effect, especially when conventional low selectivity slurry was used. Even when there was no pad conditioning effect, the EPD method could not be applied, since the measured end points were always the same due to the characteristics of the reverse moat structure with an open nitride layer.

• 한국정보통신학회논문지
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• 제18권10호
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• pp.2509-2515
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• 2014

본 논문에서는, 초고집적 CMOS를 위한 얕은 트랜치 격리로 기존의 수직 구조에서 내부 임계전압과 활성 영역의 스트레스 영향을 개선시키고자 한다. 이를 위해서 제안한 구조는 회자 모양의 얕은 트랜치 격리 구조이며, 기존 수직 구조와 제안한 구조에 대해서 전자농도 분포와 게이트 바이어스 대 에너지 밴드 형태, 열전자 스트레스와 열 손상의 유전 강화 전계를 분석 하고자 한다. 물리적 기본 모델들은 TCAD 툴을 이용하며, 집적화 소자들에 있어서 분석 조건은 주위 조건과 스트레스 인가이다. 분석 결과, 얕은 트랜치 격리 구조가 소자의 크기가 감소됨에 따라서 수동적인 전기적 기능이며, 트랜지스터 응용에서 제안한 회자 구조의 얕은 트랜치 격리 구조가 전기적 특성에서 전위차 전계와 포화 임계 전압이 높게 나타났으며, 활성영역에서 스트레스의 영향은 감소되었다. 이 결과 데이터를 바탕으로 제작한 소자의 결과 분석도 시뮬레이션 결과 데이터와 거의 동일하였다.

• Earthquakes and Structures
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• 제23권1호
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• pp.87-100
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• 2022

Limiting the displacement of seismic isolators causes a pounding phenomenon under severe earthquakes. Therefore, the ASCE 7-16 has provided minimum criteria for the design of the isolated building. In this research the seismic response of isolated buildings by Triple Friction Pendulum Isolator (TFPI) under the impact, expected, and unexpected mass eccentricity was evaluated. Also, the effect of different design parameters on the seismic behavior of structural and nonstructural elements was found. For this, a special steel moment frame structure with a surrounding moat wall was designed according to the criteria, by considering different response modification coefficients (RI), and 20% mass eccentricity in one direction. Then, different values of these parameters and the damping of the base isolation were evaluated. The results show that the structural elements have acceptable behavior after impact, but the nonstructural components are placed in a moderate damage range after impact and the used improved methods could not ameliorate the level of damage. The reduction in the RI and the enhancement of the isolator's damping are beneficial up to a certain point for improving the seismic response after impact. The moat wall reduces torque and maximum absolute acceleration (MAA) due to unexpected enhancement of mass eccentricity. However, drifts of some stories increase. Also, the difference between the response of story drift by expected and unexpected mass eccentricity is less. This indicates that the minimum requirement displacement according to ASCE 7-16 criteria lead to acceptable results under the unexpected enhancement of mass eccentricity.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.28-32
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• 2003

In this paper, we have studied the in-situ end point detection (EPD) for direct chemical mechanical polishing (CMP) of shallow trench isolation (STI) structures without the reverse moat etch process. In this case, we applied a high selectivity $1n (HSS) that improves the silicon oxide removal rate and maximizes oxide to nitride selectivity Quite reproducible EPD results were obtained, and the wafer-to-wafer thickness variation was significantly reduced compared with the conventional predetermined polishing time method without EPD. Therefore, it is possible to achieve a global planarization without the complicated reverse moat etch process. As a result, the STI-CMP process can be simplified and improved using the new EPD method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.90-93
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• 2000

In this study, the rise throughput and the stability in fabrication of device can be obtained by applying of CMP process to STI structure in 0.18um semiconductor device. To employ in STI CMP, the reverse moat process has been added thus the process became complex and the defects were seriously increased. Removal rates of each thin films in STI CMP was not equal hence the devices must to be effected, that is, the damage was occured in the device dimension in the case of excessive CMP process and the nitride film was remained on the device dimension in the case of insufficient CMP process than these defects affect the device characteristics. To resolve these problems, the development of slurry for CMP with high removal rate and high selectivity between each thin films was studied then it can be prevent the reasons of many defects by reasons of many defects by simplification of process that directly apply CMP process to STI structure without the reverse moat pattern process.

• 한국전통조경학회지
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• 제35권1호
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• pp.25-35
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• 2017

본 연구는 성의 외곽에 군사적 방어 역할을 하거나 이를 경계로 공간을 구분하고 기후변화로 인한 온도 상승과 동물들의 서식처 감소 등 악화되어 가고 있는 현대 환경에 미기후를 조절하고, 동물의 서식처를 제공하는 등 다양한 기능을 가진 해자를 현대도시공간에 활용하기 위해 해자의 현대적 가치를 재조명해 본 것으로 연구의 범위는 성의 외곽에 군사적 방어 역할을 위해 파 놓은 못 또는 물길로 적이 성벽에 직접 접근할 수 없도록 하거나 이를 경계로 구분하고자 설치된 해자가 있는 성을 중심으로 동양에서는 한국의 낙안읍성, 해미읍성, 경주월성과 중국의 자금성, 일본의 니조성과 오사카성을 대상으로 하였으며, 서양에서는 영국의 에든버러성과 프랑스의 블루아성, 스위스의 시옹성, 덴마크의 프레데릭스보르성을 대상으로 하였다. 연구의 방법으로는 문헌조사와 현지조사를 통해 연구를 진행하였다. 동양은 문헌조사와 현지조사를 병행하여 실시하였으며, 서양은 문헌조사를 위주로 진행하였다. 문헌조사를 통해서는 해자의 기원과 해자의 개념, 해자의 기능, 서양 해자의 역사와 문화 등에 대하여 관계기관과 선행연구의 자료를 기준으로 하였으며 동양의 현지조사는 한국의 낙안읍성, 해미읍성, 경주월성, 중국의 자금성, 일본의 니조성, 오사카성을 2016년 1월부터 2016년 12월까지 각 대상지별로 총 2~3회에 걸쳐 답사를 실시하였다. 조사내용은 각 대상지의 해자에 대한 기능과 규모, 특징 등에 대하여 관계자 인터뷰, 사진촬영, 실측, 관찰 등의 방법을 통해 조사 분석하였으며, 본 연구의 결과는 다음과 같다. 해자는 성 외곽에 군사적 방어시설과 경계를 구분하고자 설치된 시설물로서 동 서양의 고대로부터 중세에 이르기까지 성과 함께 도시를 구성하는 요소로 중요한 역할을 하였다. 해자가 군사적 방어 목적이 소멸되면서 역할도 점차 사라져 가고 있으나 물이 가득한 해자는 다양한 문화 활동과 동물들의 서식처 제공 등 역사와 문화적 가치가 큰 친수공간임에도 불구하고 현대 조경 계획에 있어 배제되고 있는 실정이다. 다양한 기능을 가진 해자를 현대도시에 반영, 활용함으로써 공기 순환이 막힌 도시에 쾌적한 공기를 유입시키고 수경요소로서 도시에 활력을 불어 넣을 수 있는 해자를 아파트, 공원지역 등에 조경요소로 적극 활용될 수 있기를 기대한다.