• 한국분말재료학회지
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• 제28권1호
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• pp.25-30
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• 2021

The surface of silicon dummy wafers is contaminated with metallic impurities owing to the reaction with and adhesion of chemicals during the oxidation process. These metallic impurities negatively affect the device performance, reliability, and yield. To solve this problem, a wafer-cleaning process that removes metallic impurities is essential. RCA (Radio Corporation of America) cleaning is commonly used, but there are problems such as increased surface roughness and formation of metal hydroxides. Herein, we attempt to use a chelating agent (EDTA) to reduce the surface roughness, improve the stability of cleaning solutions, and prevent the re-adsorption of impurities. The bonding between the cleaning solution and metal powder is analyzed by referring to the Pourbaix diagram. The changes in the ionic conductivity, H2O2 decomposition behavior, and degree of dissolution are checked with a conductivity meter, and the changes in the absorbance and particle size before and after the reaction are confirmed by ultraviolet-visible spectroscopy (UV-vis) and dynamic light scattering (DLS) analyses. Thus, the addition of a chelating agent prevents the decomposition of H2O2 and improves the life of the silicon wafer cleaning solution, allowing it to react smoothly with metallic impurities.

• 한국재료학회지
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• 제14권1호
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• pp.9-12
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• 2004

Metallic impurities, such as Fe, Cu, and Au, become generation and recombination centers for minority carriers when combined with oxide precipitates or silicon self-interstitial clusters. As these centers may cause leakage and discharge in silicon devices, their prevention through gettering of the metallic impurities is an important issue. In this article, key aspects of intrinsic gettering, such as oxygen control, wafer cleaning, device area denudation, and bulk oxygen precipitation are discussed, and a practical method of implementing intrinsic gettering is outlined.

• 자원리싸이클링
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• 제12권1호
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• pp.55-64
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• 2003

현재 국내에서는 원유처리과정에서 발생하는 FCC 폐촉매로부터 금속 제거를 통한 촉매의 재활용은 시도된 적이 없으며 금속 불순물에 대한 분리 기술도 현재 정립되어있지 않은 상태이다. 현재 폐기물로서만 취급되어 온 FCC 페촉매로부터 유용성분의 회수 및 탈금속 가능성의 여부를 확인한다면 폐기물의 재활용 측면뿐만 아니라 폐기물의 효율적 처리, 그리고 경제적 소재화 측면에도 기여하는 바가 클 것으로 생각된다. 본 연구에서는 폐촉매에 부착된 Fe, Ni, V 등 금속의 물리화학적 성질에 따라 직접 혹은 산화 가열한 후, 자력 선별법을 통해 폐촉매로부터의 불순물 분리에 대한 조사를 수행하고 이에 따른 촉매의 재사용 가능성에 대해 검토하였다. 자력선밀 실험결과, 산화된 FCC 폐촉매에 비해 비산화 폐촉매가 상대적으로 자력에 의한 선별성이 높은 것으로 관찰되었으며, 스크린 매트릭스 방법보다 볼 매트릭스 방법을 적용하였을 경우 선별력이 양호한 것으로 나타났다. 선별효율은 자장세기의 증가에 따라 증가하는 경향을 보였으며, 볼 매트릭스 방법은 최대 51.10%의 선별력을 가지고 있는 것으로 나타났다. 선별된 시료들의 ICP 분석결과, V, Ni, Fe 의 순으로 금속성분이 존재하는 것을 관찰할 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.1-5
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• 2000

As the semiconductor devices are miniaturized, the number of the unit cleaning processes increases. In order to processes by conventional RCA cleaning process, the consumption of volume of liquid chemical and DI water became huge. Therefore, the problem of environmental issues are evolved by the increased consumption of chemicals. To resolve this matter, an advanced cleaning process by Electrolyzed Water was studied in this work. The electrolyzed water was made by an electrolysis equipment which was composed of three chambers of anode, cathode, and middle chambers. In the case of electrolyzed water with electrolytes in the middle chamber, oxidatively acidic water of anode and reductively alkaline water of cathode were obtained. The oxidation/reduction potentials and pH of anode water and cathode water were measured to be +l000mV and 4.8, and -530mV and 6.3, respectively. The Si-wafers contaminated with metallic impurities were cleaning with the electrolyzed water. To analysis the amounts of metallic impurities on Si-water surfaces, ICP-MS(Inductively Coupled Plasma-Mass spectrometer) was introduced. From results of ICP-MS measurements, it was concluded that the ability of electrolyzed water was equivalent to that of the conventional RCA cleaning.

• 한국재료학회지
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• 제16권2호
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• pp.80-84
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• 2006

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

• 한국주조공학회지
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• 제15권3호
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• pp.283-290
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• 1995

Molybdenum ingot of 50mm in diameter were obtained from sintered Mo bars by EB drip melting technique. Macroscopic observation of EB remelted ingot indicates that coarse and columnar grains grow in the direction parallel to ingot pulling direction. This can be explained by slow solidification (3mm/min), large temperature gradient and heat flow to this direction. The orientation of columnar structure was found to be <110>, <200> and <211> by the analysis of X-ray diffraction patterns. The contents of typical metallic impurities in Mo sintered bar are 1.2ppm Cr, 3ppm Fe, 44ppm Zr, 150ppm W. Most of metallic impurities were reduced below the order of ppm except zirconium and tungsten by the selective evaporation. In the removal of nonmetallic impurities, oxygen and carbon impurities were lowered from 120 to 6ppm and from 157 to 106ppm, respectively, after first melting. Although the purification effect was not significant with the number of remelting, Vickers hardness was reduced from 217 to 195 and 184 in sequence with increasing the number of remelting.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.370-370
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• 2010

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 추계학술발표회
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• pp.155-157
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• 1996

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.107.4-107
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• 1998

• E2M - 전기 전자와 첨단 소재
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• 제10권5호
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• pp.447-452
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• 1997

Effects of metal impurities in insulation of distribution cables on electrical conduction of distribution cables was investigated. Samples of Al, Cu, Fe are fabricated as metallic impurities, and measured electrical conductivity in the voltage range of 0~10 KV. Temperature dependent effect of hysteresis curves and the relationship between forward and reverse current due to impurity content are discussed.