• Journal of the Korean Society for Precision Engineering
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• v.21 no.12
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• pp.160-166
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• 2004

Self-Assembled Monolayers(SAMs) by alkanethiol adsorption to thin metal film are widely being investigated fer applications as coating layer for anti-stiction or friction reduction and in fabrication of micro structure of molecule and bio molecule. Recently, there have been many researches on micro patterning using the advantages of very thin thickness and etching resistance of Self-Assembled Monolayers in selective etching of thin metal film. In this report, we present the several machining method to form the nanoscale structure by Mask-Less laser patterning using alknanethiolate Self-Assembled Monolayers such as thin metal film etching and heterogeneous SAMs structure formation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.13-13
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• 2010

The solar energy conversion will take 10 % global energy need by 2033. A thin film type solar cell has been considered as one of the promising candidates for a large area applicable solar cell fabrication at a low cost. The metal-assisted growth of microcrystalline Si (mc-Si) films has been reported for a quality Si film synthesis at a low temperature. It discusses the spontaneous growth of a Si film above a metal-layer for a thin film solar cell. Quite recently, a substantial demand of nanomaterials has been addressed for cost-effective solar cells. The nanostructure provides a large photoactive surface at a fixed volume, which is an advantage in the effective use of solar power. But the promising of nanostructure active solar cell has not been much fulfilled due mainly to the difficulty in architecture of nanostructures. We present here the Si nanowire (SiNW)-embedded Schottky solar cell. Multiple SiNWs were connected to two different metals to form a Schottky or an ohmic contact according to the metal work function values. It discusses the scheme of rectifying contact between metals and SiNWs and the SiNW-embedded Schottky solar cell performances.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.225-228
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• 2002

The adhesion effect between the oxide layer and the metal layer has been studied by RTP anneal. Two types of oxides, BPSG and P-TEOS, were used as a bottom layer under multi-layered metal film. We observe the interface between oxide and metal layer using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Adhesion failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal film at 650"C RTP anneal. The phosphorus rich layer was observed at interface between BPSG oxide and metal layer by AES and TEM measurements. On the other hand adhesion was a)ways good in the sample used P-TEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal film was improved when the sample was annealed below $650^{\circ}C$.TEX>.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.19.2-19.2
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• 2011

The $(Sr_{0.75},\;La_{0.25})TiO_3$ (SLTO) ultra-thin films with various thicknesses have been grown on Ti-O terminated $SrTiO_3$(100) substrate using Laser-Molecular Beam Epitaxy (Laser MBE). By monitoring the in-situ specular spot intensity oscillation of reflection high energy electron diffraction (RHEED), we controlled the layer-by-layer film growth. The film structure and topography were verified by atomic force microscopy (AFM) and high resolution thin film x-ray diffraction by the synchrotron x-ray radiation. We have also investigated the electronic band structure using x-ray absorption spectroscopy (XAS). The ultra thin SLTO film exhibits thickness driven metal-insulator transition around 8 unit cell thickness when the film thickness progressively reduced to 2 unit cell. The SLTO thin films with an insulating character showed band splitting in Ti $L_3-L_2$ edge XAS spectrum which is attributed to Ti 3d band splitting. This narrow d band splitting could drive the metal-insulator transition along with Anderson Localization. In optical conductivity, we have found the spectral weight transfer from coherent part to incoherent part when the film thickness was reduced. This result indicates the possibility of enhanced electron correlation in ultra thin films.

• Journal of the Korean institute of surface engineering
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• v.47 no.3
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• pp.99-103
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• 2014

The encapsulation method of flexible organic light emitting devices (OLEDs) was investigated for the structure of ITO / 2-TNATA / NPB / $Alq_3$ : Rubrene (1 vol.%) / $Alq_3$ / LiF / Al / $Alq_3$ / LiF / Al (OLED #1), on which $SiN_x$ thin film was deposited and metal film was attached to protect the damage of OLED from oxygen and moisture. The $SiN_x$ thin film was deposited by plasma enhanced chemical vapor deposition (PECVD) method using $SiH_4$ of 20 sccm and $N_2$ of 15~35 sccm as reactor gases. The optimum $SiN_x$ deposition condition was found to be 20 sccm $SiH_4$ and 20 sccm $N_2$ from the Ca test of the fabricated $SiN_x$ thin film. The life time of OLED #1, OLED #1 / $SiN_x$ 200 nm, OLED #1 / $SiN_x$ 400 nm and OLED #1 / $SiN_x$ 400 nm / metal film was 7, 12, 25, and 45 hours, respectively. In conclusion, it has been shown that the lifetime of OLEDs can be improved more than 6 times by $SiN_x$ film and a metal film encapsulation.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.63-67
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• 2015

In this study, we demonstrate the change of optical characteristic by thickness of metal deposition on nano metal grid polarizer film fabrication. Nano metal grid polarizer film consists of aluminium grid polarizer layer on PET (Polyethylene phthalate) substrate. We aim at metal grid layer formation for the large nano wire grid polarizer fabrication. we draw process conditions of the nano metal grid polarizer film fabrication to improve transmittance and extinction ratio and Nano wire grid polarizer film (NWGP) film is fabricated with 140 nm pitch, 70 nm width, and 70 nm depth of metal grid on optimum design conditions. As a result, we get high optical properties of nano wire grid polarizer which is the maximum transmittance of 80% and the extinction ratio of $10^6$ at 600 nm wavelength respectively.

• Transactions of the Korean hydrogen and new energy society
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• v.25 no.3
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• pp.305-310
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• 2014

This study examined the morphological changes in lithium surface immersed in 1mol $dm^{-3}$ (M) $LiPF_6 $ dissolved in propylene carbonate (PC) containing different 1,2-dimethoxyethane (DME) concentrations as a co-solvent. A passivation film was formed on the surface of lithium metal by electrolyte decomposition. The passivation film formation reactions were significantly affected by the amount of co-solvent, DME, in electrolyte solution. A stable film was obtained from the 1 M $LiPF_6 $ / PC:DME (67:33) solution in which lithium electrode showed good electrochemical performances. Atomic force microscope (AFM) and electrochemical impedance spectroscopy (EIS) results revealed that there were no direct correlations between changes in the surface morphology of lithium metal and the resistance behavior of its passivation film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.19.1-19.1
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• 2011

We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.696-699
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• 2003

In this study, we suggested the model to precisely evaluate the ferroelectric hysteresis loop, using the modified Sawyer-Tower circuit and the ferroelectric capacitor with a MDFM(Metal-Dielectric-ferroelectric-Metal) structure. The mathematical expression of dipole polarization is applied to the numerical integration algorithm, and the fatigue property can be considered including the dielectric layer between ferroelectrics and bottom electrode. The validity of our model is proved comparing the estimated value of our model and the measured results of PLT(10) thin film.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.408-412
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• 2007

It is almost impossible to secure the reproductibility and stability of a commercial Thick-Film Metal Oxide Semiconductor Gas Sensor since it is very difficult to keep the consistency of the manufacturing environment. Thus it is widely known that the general Semiconductor-Oxide Gas Sensors are not appropriate for precise measurement systems. In this paper, the output characteristic analyzer of the various Thick-Film Metal Oxide Semiconductor Gas Sensors that are used to recognize the air quality within an automobile are proposed and examined. The analyzed output characters in a normal air chamber are grouped by sensor ranks and used to fill out the characteristic table of the Thick-Film Metal Oxide Semiconductor Gas Sensors. The characteristic table is used to determine the rank of the sensor that is equipped in the current air cleaner system of an automobile. The proposed air control system can also adapt the on-demand operation that recognizes the history of the passenger's manual-control.