Proceedings of the Materials Research Society of Korea Conference (한국재료학회:학술대회논문집)

Materials Research Society of Korea (한국재료학회)
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Metal-insulator Transition in Low Dimensional $La_{0.75}Sr_{0.25}VO_3$ Thin Films

  • Huynh, Sa Hoang (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Dao, Tran M. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Mondal, Partha S. (School of Advanced Materials Science and Engineering, Sungkyunkwan University) ;
  • Takamura, Y. (Department of Chemical Engineering and Materials Science, University of California) ;
  • Arenholz, E. (Advanced Light Source, Lawrence Berkeley Lab.) ;
  • Lee, Jai-Chan (School of Advanced Materials Science and Engineering, Sungkyunkwan University)
  • Published : 2011.10.27
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Abstract

We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

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