• Title/Summary/Keyword: metal deposition

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Latent fingerprint development from rubber gloves using MMD I (Multimetal deposition I)

  • An, Jaeyoung;Kim, Heesu;Oh, Jungmin;Han, Sooyong;Yu, Jeseol
    • Analytical Science and Technology
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    • v.33 no.2
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    • pp.108-114
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    • 2020
  • Gloves are very important evidence at a crime scene; specifically, rubber gloves can be found easily at homes. Therefore, crime scene investigators attempt to develop fingerprints inside the rubber gloves that are discovered, for identifying unknown suspects. This study compared the effectiveness of three different methods that are used for developing latent prints on gloves with aging time. These were the powder, cyanoacrylate fuming, and multi-metal deposition I methods. The powder method achieved good results for 1-3 days of aged prints, and the cyanoacrylate fuming method worked well on 2-week-old prints. In comparison, multi-metal deposition I method developed good quality fingerprints for 6 weeks of aging time.

Optimization of Plasma Spray Coating Parameters of Alumina Ceramic by Taguchi Experimental Method (실험계획법에 의한 알루미나 세라믹의 플라즈마 용사코팅 최적화)

  • 이형근;김대훈;윤충섭
    • Journal of Welding and Joining
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    • v.18 no.6
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    • pp.96-101
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    • 2000
  • Sintered alumina ceramic substrate has been used for the insulating substrate for thick Hybrid IC owing to its cheapness and good insulating properties. Some of thick HIC's are important to eliminate the heat emitted from the parts that are mounted on the ceramic substrate. Sintered ceramic substrate can not transfer and emit the heat efficiently. It's been tried to do plasma spray coating of alumina ceramic on the metal substrates that have a good heat emission property. The most important properties to commercialize this ceramic coated metal substrate are surface roughness and deposition efficiency. In this study, plasma spray coating parameters are optimized to minimize the surface roughness and to maximize the deposition efficiency using Taguchi experimental method. By this optimization, the deposition efficiency was greatly improved from 35% at the frist time to 75% finally.

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Structural study of indium oxide thin films by metal organic chemical vapor deposition (저온화학기상증착에 의한 인듐산화막 구조에 관한 연구)

  • Pammi, S.Venkat.N.;Seong, Nak-Jin;Yoon, Soon-Gil
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.47-47
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    • 2007
  • Indium oxide conducting films were dep9sited on Si(100) substrates at various temperatures by liquid delivery metal organic chemical vapor deposition using Indium (III) tris (2,2,6,6-tetramethyl-3.5-heptanedionato) $(dpm)_3$ precursors. The films deposited at $200{\sim}400^{\circ}C$ were grown with a (111) preferred orientation and exhibit an increase of grain size from 21 to 33nm with increasing deposition temperature. In the range of deposition temperature, there is no metallic indium phase in deposited films.

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A STUDY ON COPPER DEPOSITION PROCESS DURING ANODIC OXIDATION OF ALUMINIUM ALLOY

  • Koh, I.S.;Han, S.H.;Shin, D.H.
    • Journal of the Korean institute of surface engineering
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    • v.32 no.3
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    • pp.444-446
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    • 1999
  • The structure and composition of anodic films, formed on 6063 commercial aluminium alloy at constant current density of $1.5A/^dm2$ with various superimposed cathodic current ratio, in the range 0~33%, in the 11% $H_2SO_4$ with various concentration of $CuSO_4{\cdot}5H_2O$, in the range 0~75 g/l, without cathodic current are generally porous-type and no sign of Cu co-deposition appearance, suggesting that cathodic current is an important factor in the Cu co-deposition. Comparison with the anodic film thickness measurement results obtained from anodic film formed by direct anodic current and anodic film formed by superimposed various portion of cathodic current, the portion of cathodic current of input current increases with decrease of anodic film thickness and increases with increase of concentration of $Cu_2S{\;}and{\;}Cu_2O$ in the anodic film.

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Production of Ultra-fine Metal Powder with Gas Atomization Processes

  • Wang, M. R.
    • Journal of ILASS-Korea
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    • v.11 no.2
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    • pp.59-68
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    • 2006
  • Experimental results of the metal powder production with internal mixing, internal impinging and the atomizer coupled with substrate design are presented in this paper. In a test with internal mixing atomizer, mean powder size was decreased from $37{\mu}m\;to\;23{\mu}m$ for Pb65Sn35 alloy as the gas-to-melt mass ratio was increased from 0.04 to 0.17. The particle size further reduces to $16.01{\mu}m$ as the orifice area is increased to $24mm^2$. The micrograph of the metal powder indicates that very fine and spherical metal powder has been produced by this process. In a test program using the internal impinging atomizers, the mean particle size of the metal powder was decreased from $22{\mu}m\;to\;12{\mu}m$ as the gas-to-melt-mass ratio increased from 0.05 to 0.22. The test results of an atomizer coupled with a substrate indicates that the deposition rate of the molten spray on the substrate is controlled by the diameter of the substrate, the height of the substrate ring and the distance of the substrate from the outlet of the atomizer. This in rum determines the powder production rate of the spraying processes. Experimental results indicate that the deposition rate of the spray forming material decreases as the distance between the substrate and the atomizer increases. For example, the deposition rate decreases from 48% to 19% as the substrate is placed at a distance from 20cm to 40cm. On the other hand, the metal powder production rate and its particle size increases as the subsrate is placed far away from the atomizer. The production of metal powder with mean particle size as low as $3.13{\mu}m$ has been achieved, a level which is not achievable by the conventional gas atomization processes.

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Support Effect of Arc Plasma Deposited Pt Nanoparticles/TiO2 Substrate on Catalytic Activity of CO Oxidation

  • Qadir, Kamran;Kim, Sang Hoon;Kim, Sun Mi;Ha, Heonphil;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.261-261
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    • 2013
  • The smart design of nanocatalysts can improve the catalytic activity of transition metals on reducible oxide supports, such as titania, via strong metal-support interactions. In this work, we investigatedtwo-dimensional Pt nanoparticle/titania catalytic systems under the CO oxidation reaction. Arc plasma deposition (APD) and metal impregnation techniques were employed to achieve Pt nanoparticle deposition on titania supports, which were prepared by multitarget sputtering and sol-gel techniques. APD Pt nanoparticles with an average size of 2.7 nm were deposited on sputtered and sol-gel-prepared titania films to assess the role of the titania support on the catalytic activity of Pt under CO oxidation. In order to study the nature of the dispersed metallic phase and its effect on the activity of the catalytic CO oxidation reaction, Pt nanoparticles were deposited in varying surface coverages on sputtered titania films using arc plasma deposition. Our results show an enhanced activity of Pt nanoparticles when the nanoparticle/titania interfaces are exposed. APD Pt shows superior catalytic activity under CO oxidation, as compared to impregnated Pt nanoparticles, due to the catalytically active nature of the mild surface oxidation and the active Pt metal, suggesting that APD can be used for large-scale synthesis of active metal nanocatalysts.

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Non-stoichiometry-induced metal-to-insulator transition in nickelate thin films grown by pulsed laser deposition

  • Lee, Jongmin;Choi, Kyoung Soon;Lee, Tae Kwon;Jeong, Il-Seok;Kim, Sangmo;Song, Jaesun;Bark, Chung Wung;Lee, Joo-Hyoung;Jung, Jong Hoon;Lee, Jouhahn;Kim, Tae Heon;Lee, Sanghan
    • Current Applied Physics
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    • v.18 no.12
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    • pp.1577-1582
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    • 2018
  • While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.

Characteristics of Hafnium Silicate Films Deposited on Si by Atomic Layer Deposition Process

  • Lee, Jung-Chan;Kim, Kwang-Sook;Jeong, Seok-Won;Roh, Yong-Han
    • Transactions on Electrical and Electronic Materials
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    • v.12 no.3
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    • pp.127-130
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    • 2011
  • We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

MEVVA ion Source And Filtered Thin-Film Deposition System

  • Liu, A.D.;Zhang, H.X.;Zhang, T.H.;Zhang, X.Y.;Wu, X.Y.;Zhang, S.J.;Li, Q.
    • Journal of Korean Vacuum Science & Technology
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    • v.6 no.2
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    • pp.55-57
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    • 2002
  • Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

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Status of Research on Selective Laser Sintering of Nanomaterials for Flexible Electronics Fabrication (나노물질의 선택적 레이저소결을 이용한 유연전기소자 구현 연구현황)

  • Ko, Seung-Hwan
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.35 no.5
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    • pp.533-538
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    • 2011
  • A plastic-compatible low-temperature metal deposition and patterning process is essential for the fabrication of flexible electronics because they are usually built on a heat-sensitive flexible substrate, for example plastic, fabric, paper, or metal foil. There is considerable interest in solution-processible metal nanoparticle ink deposition and patterning by selective laser sintering. It provides flexible electronics fabrication without the use of conventional photolithography or vacuum deposition techniques. We summarize our recent progress on the selective laser sintering of metals and metal oxide nanoparticles on a polymer substrate to realize flexible electronics such as flexible displays and flexible solar cells. Future research directions are also discussed.