• Advances in materials Research
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• v.8 no.4
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• pp.337-359
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• 2019

Shape Memory Polymer Composites (SMPC) have gained popularity over the last few decades due to its flexible shape memory behaviour over wide range of strains and temperatures. In this paper, non-linear bending analysis has been carried out for SMPC beam under the application of uniformly distributed transverse load (UDL). Simplified C⁰ continuity Finite Element Method (FEM) based on Higher Order Shear Deformation Theory (HSDT) has been adopted for flexural analysis of SMPC. The numerical solutions are obtained by iterative Newton Raphson method. Material properties of SMPC with Shape Memory Polymer (SMP) as matrix and carbon fibre as reinforcements, have been calculated by theory of volume averaging. Effect of temperature on SMPC has been evaluated for numerous parameters for instance number of layers, aspect ratio, boundary conditions, volume fraction of carbon fiber and laminate stacking orientation. Moreover, deflection profile over unit length and behavior of stresses across thickness are also presented to elaborate the effect of glass transition temperature (T_g). Present study provides detailed explanation on effect of different parameters on the bending of SMPC beam for large strain over a broad span of temperature from 273-373K, which encompasses glass transition region of SMPC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.134-135
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• 2008

Ultra-thin $SiO_2/ZrO_2$ dielectrics were deposited by atomic layer chemical vapor deposition (ALCVD) method for non-volatile memory application. Metal-oxide-semiconductor (MOS) capacitors were fabricated by stacking ultra-thin $SiO_2$ and $ZrO_2$ dielectrics. It is found that the tunneling current through the stacked dielectric at the high voltage is lager than that through the conventional silicon oxide barrier. On the other hand, the tunneling leakage current at low voltages is suppressed. Therefore, the use of ultra-thin $SiO_2/ZrO_2$ dielectrics as a tunneling barrier is promising for the future high integrated non-volatile memory.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.478-483
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• 2003

The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.226-232
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• 2023

As a potential alternative to flash memory, HfO₂/Al₂O₃ stacks appear to be a viable option as charge capture layers in charge trapping memories. The paper undertakes a review of HfO₂/Al₂O₃ stacks as charge trapping layers, with a focus on comparing the number, thickness, and post-deposition heat treatment and γ-ray and white x-ray treatment of such stacks. Compared to a single HfO₂ layer, the memory window of the 5-layered stack increased by 152.4% after O₂ annealing at ±12 V. The memory window enlarged with the increase in number of layers in the stack and the increase in the Al/Hf content in the stack. Furthermore, our comparison of the treatment of HfO₂/Al₂O₃ stacks with varying annealing temperatures revealed that an increased annealing temperature resulted in a wider storage window. The samples treated with O₂ and subjected to various γ radiation intensities displayed superior resistance. and the memory window increased to 12.6 V at ±16 V for 100 kGy radiation intensity compared to the untreated samples. It has also been established that increasing doses of white x-rays induced a greater number of deep defects. The optimization of stacking layers along with post-deposition treatment condition can play significant role in extending the memory window.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1997.10a
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• pp.35-41
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• 1997

Unit cell analyses were peformed to study the engineering properties of satin weave textile composites. Two 5-harness satin weave layers with fiber tow shifts were modeled by unit cells and repeating boundary conditions were applied at the outer surface of the unit cells. Multi-field macroelements were employed to consider the microstructure details and to effectively reduce computer memory requirements. Preliminary results indicated that the engineering properties of 5-harness satin weave textile composites can vary significantly according to the manner how the adjacent fiber tows were arranged in stacking.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.102-102
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• 2018

Electronic industry had required the finer size and the higher performance of the device. Therefore, 3-D die stacking technology such as TSV (through silicon via) and micro-bump had been used. Moreover, by the development of the 3-D die stacking technology, 3-D structure such as chip to chip (c2c) and chip to wafer (c2w) had become practicable. These technologies led to the appearance of HBM (high bandwidth memory). HBM was type of the memory, which is composed of several stacked layers of the memory chips. Each memory chips were connected by TSV and micro-bump. Thus, HBM had lower RC delay and higher performance of data processing than the conventional memory. Moreover, due to the development of the IT industry such as, AI (artificial intelligence), IOT (internet of things), and VR (virtual reality), the lower pitch size and the higher density were required to micro-electronics. Particularly, to obtain the fine pitch, some of the method such as copper pillar, nickel diffusion barrier, and tin-silver or tin-silver-copper based bump had been utillized. TCB (thermal compression bonding) and reflow process (thermal aging) were conventional method to bond between tin-silver or tin-silver-copper caps in the temperature range of 200 to 300 degrees. However, because of tin overflow which caused by higher operating temperature than melting point of Tin ($232^{\circ}C$), there would be the danger of bump bridge failure in fine-pitch bonding. Furthermore, regulating the phase of IMC (intermetallic compound) which was located between nickel diffusion barrier and bump, had a lot of problems. For example, an excess of kirkendall void which provides site of brittle fracture occurs at IMC layer after reflow process. The essential solution to reduce the difficulty of bump bonding process is copper to copper direct bonding below $300^{\circ}C$. In this study, in order to improve the problem of bump bonding process, copper to copper direct bonding was performed below $300^{\circ}C$. The driving force of bonding was the self-annealing properties of electrodeposited Cu with high defect density. The self-annealing property originated in high defect density and non-equilibrium grain boundaries at the triple junction. The electrodeposited Cu at high current density and low bath temperature was fabricated by electroplating on copper deposited silicon wafer. The copper-copper bonding experiments was conducted using thermal pressing machine. The condition of investigation such as thermal parameter and pressure parameter were varied to acquire proper bonded specimens. The bonded interface was characterized by SEM (scanning electron microscope) and OM (optical microscope). The density of grain boundary and defects were examined by TEM (transmission electron microscopy).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.11
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• pp.23-29
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• 2010

This paper presents a method for constructing a memory system using defective memory chips comprising faulty storage blocks. The three-dimensional memory system introduced here employs a die-stacked structure of faulty memory chips. Signals lines passing through the through-silicon-vias (TSVs) connect chips in the defect tolerant structure. Defective chips are classified into several groups each group comprising defective chips having faulty blocks at the same location. A defect tolerant memory system is constructed using chips from different groups. Defect-free storage blocks from spare chips replace faulty blocks using additional routing circuitry. The number of spare chips for defect tolerance is $s={\ulcorner}(k{\times}n)/(m-k){\urcorner}$ to make a system defect tolerant for (n+s) chips with k faulty blocks among m independently addressable blocks.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.540-543
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• 2010

POWER PC series are common to the Central Processing Unit for Military Single Board Computer. Among them, G4 group, which contains the 74xx series supported by Freescale manufacturer is mainly used in the Military applications. We focus on the Interface between memory and controller. PCB stacking method, component routing, impedance matching and harsh environment for Military spec are the main constraints for implementation. Also, we developed memory as a module for the consideration of Military environments. The overall type of SBC should be designed by the form of 6U VME or 3U VME.

• Korean Journal of Materials Research
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• v.11 no.2
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• pp.88-93
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• 2001

The thermal behavior and the crystallographic characteristics of an epitaxial $C49-TiSi_2$ island formed in a Si (001) substrate by $N_2$, treatment were investigated by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). It was found from the analyzed results that the epitaxial $C49-TiSi_2$ was thermally stable even at high temperature of $1000^{\circ}C$ therefore did not transform into the C54-stable phase and did not deform morphologically. HRTEM results clearly showed that the epitaxial $TiSi_2$ phase and Si have the orientation relationship of (060)[001]$TiSi_2$//(002)[110]Si, and the lattice strain energy at the interface was mostly relaxed by the formation of misfit dislocations. Furthermore, the mechanism on the formation of the epitaxial $_C49-TiSi2$ in Si and stacking faults lying on the (020) plane of the C49 Phase were discussed through the analysis of the HRTEM image and the atomic modeling.

• Journal of the Korea Society of Computer and Information
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• v.26 no.11
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• pp.1-9
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• 2021

3D-NAND flash memory provides high capacity per unit area by stacking 2D-NAND cells having a planar structure. However, due to the nature of the lamination process, there is a problem that the frequency of error occurrence may vary depending on each layer or physical cell location. This phenomenon becomes more pronounced as the number of write/erase(P/E) operations of the flash memory increases. Most flash-based storage devices such as SSDs use ECC for error correction. Since this method provides a fixed strength of data protection for all flash memory pages, it has limitations in 3D NAND flash memory, where the error rate varies depending on the physical location. Therefore, in this paper, pages and layers with different error rates are classified into clusters through the K-means machine learning algorithm, and differentiated data protection strength is applied to each cluster. We classify pages and layers based on the number of errors measured after endurance test, where the error rate varies significantly for each page and layer, and add parity data to stripes for areas vulnerable to errors to provides differentiate data protection strength. We show the possibility that this differentiated data protection policy can contribute to the improvement of reliability and lifespan of 3D NAND flash memory compared to the protection techniques using RAID-like or ECC alone.