• Journal of the Korea Society of Computer and Information
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• v.3 no.2
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• pp.169-175
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• 1998

There is a shared multibuffer method which can preventing HOL blocking in ATM switch. However, the system still has a problem that reduces the performance of the system because of the cell loss. Therefore, in this paper, preventing of cell loss in non-contentional shared multibuffer switch is suggested. To prevent cell loss, a structure is suggested that a cell can be loss in a certain slot time is stored in the dedicated temporary memory so the cell can be transferred in the next slot time. The simulation result of the structure, this suggested system superior performance than the exited system in cell loss rate and throughput.

• Korean Journal of Biological Psychiatry
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• v.6 no.1
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• pp.12-20
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• 1999

In order to understand the pathogenesis and progression of some synaptic loss related neuropsychiatric diseases, We attempted to develop a computer model in this study. We made a simple autoassociative memory network remembering numbers, transformed it into a disease model by pruning synapses, and measured its memory performance as a function of synaptic deletion. Decline in performance was measured as amount of synaptic loss increases and its mode of decline is sudden or gradual according to the mode of synaptic pruning. The developed computer model demonstrated how synaptic loss could cause memory impairment through a series of computer simulations, and suggested a new way of research in neuropsychiatry.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.25 no.11
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• pp.1649-1654
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• 2021

In this paper, we introduce a regularization of long short-term memory (LSTM) based fall detection system using TensorFlow that can detect falls that can occur in the elderly. Fall detection uses data from a 3-axis acceleration sensor attached to the body of an elderly person and learns about a total of 7 behavior patterns, each of which is a pattern that occurs in daily life, and the remaining 3 are patterns for falls. During training, a normalization process is performed to effectively reduce the loss function, and the normalization performs a maximum-minimum normalization for data and a L2 regularization for the loss function. The optimal regularization conditions of LSTM using several falling parameters obtained from the 3-axis accelerometer is explained. When normalization and regularization rate λ for sum vector magnitude (SVM) are 127 and 0.00015, respectively, the best sensitivity, specificity, and accuracy are 98.4, 94.8, and 96.9%, respectively.

• Korean Journal of Materials Research
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• v.19 no.9
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• pp.462-467
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• 2009

The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study, Pt/$Al_2O_3/La_2O_3/SiO_2$/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memory device applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operations and reduced charge transports through blocking oxide layers. The thicknesses of $SiO_2$ were from 30 $\AA$ to 50 $\AA$. From the C-V measurement, the largest memory window of 1.3V was obtained in the 40 $\AA$ tunnel oxide specimen, and the 50 $\AA$ tunnel oxide specimen showed the smallest memory window. In the cycling test for reliability, the 30 $\AA$ tunnel oxide sample showed an abrupt memory window reduction due to a high electric field of 9$\sim$10MV/cm through the tunnel oxide while the other samples showed less than a 10% loss of memory window for $10^4$ cycles of program/erase operation. The I-V measurement data of the capacitor structures indicated leakage current values in the order of $10^{-4}A/cm^2$ at 1V. These values are small enough to be used in nonvolatile memory devices, and the sample with tunnel oxide formed at $850^{\circ}C$ showed superior memory characteristics compared to the sample with $750^{\circ}C$ tunnel oxide due to higher concentration of trap sites at the interface region originating from the rough interface.

• Smart Media Journal
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• v.4 no.3
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• pp.16-23
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• 2015

As the IT technology advances, data processing system is required to handle and process large amounts of data. However, the existing On-Disk system has limit to process data which increase rapidly. For that reason, the In-Memory system is being used which saves and manages data on the fast memory not saving data into hard disk. Although it has fast processing capability, it is necessary to use the fault tolerance techniques in the In-Memory system because it has a risk of data loss due to volatility which is one of the memory characteristics. These fault tolerance techniques lead to performance degradation of In-Memory system. In this paper, we classify the data into Hot and Cold data in consideration of the data usage characteristics in the In-Memory system and propose compound backup technique to ensure data persistence. The proposed technique increases the persistence and improves performance degradation.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.9 no.9
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• pp.3396-3411
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• 2015

Sensors used in Wireless Sensor Networks (WSN) have mostly limited capacity which affects the performance of their applications. One of the data-gathering methods is to use mobile sinks to visit these sensors so that they can save their limited battery energies from forwarding data packages to static sinks. The main disadvantage of employing mobile sinks is the delay of data collection due to relative low speed of mobile sinks. Since sensors have very limited memory capacities, whenever a mobile sink is too late to visit a sensor, that sensor's memory would be full, which is called a 'memory overflow', and thus, needs to be purged, which causes loss of collected data. In this work, a method is proposed to generate mobile sink tours, such that the number of overflows and the amount of lost data are minimized. Moreover, the proposed method does not need either the sensor locations or sensor memory status in advance. Hence, the overhead stemmed from the information exchange of these requirements are avoided. The proposed method is compared with a previously published heuristic. The simulation experiment results show the success of the proposed method over the rival heuristic with respect to the considered metrics under various parameters.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.2
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• pp.51-57
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• 2013

The current expanding mobile markets incessantly demands small form factor, low power consumption and high aggregate throughput for silicon-level integration such as memory to logic system. One of emerging solution for meeting this high market demand is 3D through silicon stacking (TSS) technology. Main challenges to bring 3D TSS technology to the volume production level are establishing a cost effective supply chain and building a reliable manufacturing processes. In addition, this technology inherently help increase number of IOs and shorten interconnect length. With those benefits, however, potential signal and power integrity risks are also elevated; increase in PDN inductance, channel loss on substrate, crosstalk and parasitic capacitance. This paper will report recent progress of wide IO memory to high count TSV logic device assembly development work. 28 nm node TSV test vehicles were fabricated by the foundry and assembled. Successful integration of memory wide IO chip with less than a millimeter package thickness form factor was achieved. For this successful integration, we discussed potential signal and power integrity challenges. This report demonstrated functional wide IO memory to 28 nm logic device assembly using 3D package architecture with such a thin form factor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.154-155
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• 2007

PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of $Ge_1Se_1Te_2$ chalcogenide material and presented the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. In this letter, we expect the method of reducing the contact size between $Ge_1Se_1Te_2$ and electrode to decrease writing current.

• Journal of the Korean Society of Food Culture
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• v.36 no.6
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• pp.633-639
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• 2021

Raphanus sativus var. hortensis f. raphanistroides Makino (Korean wild radish [WR]) are root vegetables belonging to the Brassicaceae family. These radish species mostly grow in sea areas in Asia, where they have been traditionally used as a medicinal food to treat various diseases. To investigate the effect of WR on neuronal cell death in SH-SY5Y cells, beta-amyloid was used to develop the cell death model. WR attenuated neuronal cell death in SH-SY5Y and regulated the mitogen-activated protein kinase (MAPK) signaling. WR extract also inhibited acetylcholinesterase inhibitor activity. Additionally, the WR treatment group ameliorated the behavior of the memory-impaired mice in a scopolamine-induced mouse model. In the behavior test, WR treated mice showed shorter escape latency and swimming distance and improved the platform-crossing number and the swimming time within the target quadrant. Furthermore, WR prevented histological loss of neurons in hippocampal CA1 regions induced by scopolamine. This study shows that WR can prevent memory impairment which may be a crucial way for the prevention and treatment of memory dysfunction and neuronal cell death.

• The Korea Journal of Herbology
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• v.26 no.3
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• pp.75-82
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• 2011

Objectives : In this study, we evaluated the effect of Chungganhaeju-hwan(CGHJH) on hydrogen peroxide($H_2O_2$)-induced and ethanol(EtOH)-induced neuronal damage in vitro and in vivo, respectively. Methods:We carried out the anti-oxidant effects of CGHJH against hydrogen peroxide($H_2O_2$)-induced toxicity in HT22 and PC12 cells using thiazolyl blue tetrazolium bromide. Then, to investigate the protective effect on CGHJH against EtOH-induced memory impairment and hippocampal cell damage in male ICR mice, we performed novel object recognition test(NORT), and analysed the brain tissues after immunohistochemistry and western blotting. Results:CGHJH showed protective effect from $H_2O_2$-induced cell toxicity at doses of $1\sim100{\mu}g$/mL in both HT22 and PC12 cells. CGHJH had also recovery effect from EtOH-induced memory impairment in ICR mice from NORT and it protected hippocampal cells against EtOH toxicity in the result of cresyl violet and NeuN immunoreactivity. Conclusion : These results demonstrate that CGHJH has protective effect in neuronal cells against $H_2O_2$ and EtOH toxicities and this effect could be a main role of recovery effect on EtOH-induced memory loss.