Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2007.06a
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- Pages.154-155
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- 2007
Reduced contact size in $Ge_1Se_1Te_2$ for phase change random access memory
PRAM에서 $Ge_1Se_1Te_2$ 와 전극의 접촉 면적을 줄이는 방법에 대한 효과
- Lim, Dong-Kyu (Kwangwoon Univ.) ;
- Kim, Jae-Hoon (Kwangwoon Univ.) ;
- Na, Min-Seok (Kwangwoon Univ.) ;
- Choi, Hyuk (Kwangwoon Univ.) ;
- Chung, Hong-Bay (Kwangwoon Univ.)
- Published : 2007.06.21
Abstract
PRAM(Phase-Change RAM) is a promising memory that can solve the problem of conventional memory and has the nearly ideal memory characteristics. We reviewed the issues for high density PRAM integration. Writing current reduction is the most urgent problem for high density PRAM realization. So, we studied new constitution of