• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.633-636
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• 1998

In this study, power AlGaAs/InGaAs/GaAs PM-HEMT's for mm wave's were fabricated using Electron beam lithography and air-bridge techniques, and so on. DC and AC characteristics of the fabricated power PM-HEMTs were measured under the various bias conditions. For example, DC and RF characteristics such as S21 gain of 3.6 dB at 35 ㎓, current gain cut-off frequencies of 45 ㎓ and maximum oscillation frequencies of 100 ㎓ were carefully analyzed for design methodology of sub-mm wave power devices.

• Proceedings of the KIEE Conference
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• 2005.05a
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• pp.128-130
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• 2005

This paper proposes a modified IMC-PID controller that introduces controlling factor of the system identification to the standard IMC-PID controller in order to meet the design specifications such as gain, phase margin and maximum magnitude of sensitivity function in the frequency domain as well as the design specifications in time domain, settling, rising time and overshoot, and so on.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.382-385
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• 1999

In this paper, by means of Lyapunov second method, the stability of IPD control servo systems is analyzed in the time domain for the first time. Based on the results of the stability analysis, the design rule to select the gain of IPD control is suggested such that the maximum error of output to the nominal system is guaranteed for all uncertainty and load variations. An example of a position control of a brushless dc motor is given to prove the unusefulness of the gain design rule.

• Proceedings of the KIPE Conference
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• 1998.07a
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• pp.70-74
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• 1998

In this paper, by means of Lyapunov second method, we analyze the stability of IP control servo systems in the time domain for the first time. Based on the results on the stability analysis, the design rule to select the gain of IP control is suggested such that the maximum error of output to the nominal system is guaranteed for all uncertainty and load variations. An example of a speed control of brushless dc motor given to prove the unusefulness of the gain design rule.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.4B
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• pp.743-754
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• 2000

In this paper, we propose wavelet transform image compression method using shuffling and bit plane correlation. Proposed method is that original image decompose into multiresolutions using biorthogonal wavelet transform with linear phase response property and decomposed subbands are classified by maximum classification gain. And classified data sets in each subband are quantized using arbitrary set optimum bit allocation method. Quantized data sets in each subband are shuffled and context based bit plane arithmetic encoded .In context based bit plane arithmetic encoding, the context for each subband is not assigned uniformly, but assigned according to maximum correlation direction. Our results are comparable, or superior for some images at low rates, to published state-of-the-art coders.

• The Transactions of the Korean Institute of Power Electronics
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• v.17 no.5
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• pp.423-430
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• 2012

An adaptive maximum power point tracking (MPPT) scheme employing a variable scaling factor is presented. A MPPT control loop was constructed analytically and the magnitude variation in the MPPT loop gain according to the operating point of the PV array was identified due to the nonlinear characteristics of the PV array output. To make the crossover frequency of the MPPT loop gain consistent, the variable scaling factor was determined using an approximate curve-fitted polynomial equation about linear expression of the error. Therefore, a desirable dynamic response and the stability of the MPPT scheme were maintained across the entire MPPT voltage range. The simulation and experimental results obtained from a 3 KW rated prototype demonstrated the effectiveness of the proposed MPPT scheme.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.27 no.4B
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• pp.365-371
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• 2002

In this paper, the fabricated power PHEMT devices for millimeter-wave that is below a gate-length of 0.2 $\mu\textrm{m}$ using electronic beam lithography technologies, and the DC and frequency characteristics and an output power characteristics were Measured at the various bias conditions. The unit process that is used in PHEMT's manufacture used that low-resistance ohmic contact, air-bridge and back-side lapping process technologies, and so on. The fabricated power PHEMT have an S521 gain of 4 dB and a maximum transconductance(gm) of 317 mS/mm, an unilateral current gain(fT) of 62 GHz, a maximum oscillation frequency(fmax) of 120 GHz at 35 GHz, and a maximum power output(Pmax) of 16 dBm, a power gain(GP) of 4 dB and a drain efficiency(DE) of 35.5 %.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.147-155
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• 2006

In this paper, we propose a new Mushroom-like PBG concepts for designing with forbidden frequency band-gap at low frequency. These design rules are based on enhancing the capacitance per unit area using modified top-patch of mushroom PBG with no increase on the overall thickness of the substrate board. Also, in this paper, a new approach to suppress the surface wave from antenna is proposed by embedding compact mushroom PBG in the substrate. Comparisons between the results from a conventional patch antenna to a patch antenna on a PBG substrate show that the reduction in the surface wave level is remarkable. This can be observed in the radiation pattern and the maximum gain. The maximum gain for reference patch antenna is $6.43dB{\imath}$ at 5.37 GHz, while the maximum gain for the patch antenna with normal mushroom and vane mushroom PBG is $7.24dB{\imath}\;and\;7.53dB{\imath}$at 5.14 GHz. The back radiation is also considerably reduced; this will lead, of course, to an increase in the antenna efficiency.

• Journal of IKEEE
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• v.23 no.3
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

• Journal of IKEEE
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• v.14 no.4
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• pp.257-262
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• 2010

We design a CMOS front-end with wide variable gain and low power consumption for 5.25 GHz band. To obtain wide variable gain range, a p-type metal-oxide-semiconductor field-effect transistor (PMOS FET) in the low noise amplifier (LNA) section is connected in parallel. For a mixer, single balanced and folded structure is employed for low power consumption. Using this structure, the bias currents of the transconductance and switching stages in the mixer can be separated without using current bleeding path. The proposed front-end has a maximum gain of 33.2 dB with a variable gain range of 17 dB. The noise figure and third-order input intercept point (IIP3) are 4.8 dB and -8.5 dBm, respectively. For this operation, the proposed front-end consumes 7.1 mW at high gain mode, and 2.6 mW at low gain mode. The simulation results are performed using Cadence RF spectre with the Taiwan Semiconductor Manufacturing Company (TSMC) $0.18\;{\mu}m$ CMOS technology.)