• Journal of the Korea Furniture Society
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• v.20 no.3
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• pp.232-238
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• 2009

In designing furniture and interior accessories, a computer graphic program is normally used over the whole process of manufacturing furniture from idea stage to actual manufacturing stage. It especially play an important role in the modeling process which comes before actual manufacturing stage. in such modeling process, the most important part is expression of quality of material used and surface treatment method. Expression of material quality of wood and surface finishing just like an actual picture enable the designers to analogize the feeling of furniture and interior accessories more exactly over the whole process of actual manufacturing and such a result has positive effect on development field of furniture and accessories.

• Journal of the Korean Society of Combustion
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• v.23 no.1
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• pp.44-54
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• 2018

Heat and mass balance process modeling has been conducted for a coal-firing power plant to be used as a testbed facility for development of various plant systems and equipment. As the material and design of the boiler tube bundle and fuel conversion to the biomass have become major concerns, the process modeling is required to incorporate those features in its calculation. The simulation cases for two different generation load show the satisfying results compared to the operational data from the actual system. Based on the established process conditions, the hypothetical case using wood pellet has also been simulated. Additional calculations for the tube bundle has been conducted regarding the changes in the tube material and design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.139-142
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• 2001

As microeletronics technology continues to progress, there is also a continuous demand on highly integration and miniaturization of systems. For example, it is desirable to package several integrated circuits together in multilayer structure, such as multichip modules, to achieve higher levels of compactness and higher performance. Passive components (i.e., capacitors, resistors, and inductors) are very important for many MCM applications. In addition, the low-temperature co-fired ceramic (LTCC) process has considerable potential for embedding passive components in a small area at a low cost. In this paper, we investigate a method of statistically modeling integrated passive devices from just a small number of test structures. A set of LTCC inductors is fabricated and their scattering parameters (5-parameters) are measured for a range of frequencies from 50MHz to 5GHz. An accurate model for each test structure is obtained by using a building block based modeling methodology and circuit parameter optimization using the HSPICE circuit simulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.194-197
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• 1995

In this study, we performed a modeling for $K^{+}$ ion-exchanged diffused channel waveguide and waveguide-type optical coupler by WKB(Wentzel-Kramer-Brillouim) dispersion equation, field distribution equation of mode and coupled mode theory, and examined the optical-power-dividing of the optical coupler fabricated by using the modeling condition. The optical-power-dividing was observed at the waveguide-type optical coupler with 3[$\mu\textrm{m}$] line-width, 6[$\mu\textrm{m}$] space between channel waveguides, and 3[mm] interaction length.

• Structural Engineering and Mechanics
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• v.18 no.5
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• pp.691-707
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• 2004

This paper presents the micro-mechanical modeling for predicting concrete behavior under compressive loading. The model is able to represent the heterogeneities in the microstructure up to three phases, i.e., aggregate particles, matrix and interfaces. The smeared crack concept based on non-linear fracture mechanics is implemented in order to formulate the constitutive relation for each component. The splitting tensile strength is considered as a fracture criterion for cracking in micro-level. The finite element method is employed to simulate the model based on plane stress condition by using quadratic triangular elements. The validation of the model is verified by comparing with the experimental results. The influence of tensile strength from both aggregate and matrix phases on the concrete compressive strength is demonstrated. In addition, a guideline on selecting appropriate tensile strength for each phase to obtain specified concrete compressive strength is also presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.410-413
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• 2002

In this paper, the performance of high-k dielectric is modeled by observing electrical characteristics through the process and device simulation. ZrO$_2$ on Si substrate is used as test structures to characterize the current-voltage and the capacitance-voltage profiles. In order to verify the simulation results, the experimental results are used as a reference. Based on the modeling results, the methodology can be a potential tool to predict the characteristics of the ZrO$_2$ dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values, So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of $I_D-V_D$ $I_D-V_G$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.741-746
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• 2009

Compare to conventional Indium Tin Oxide (ITO) film deposition methods, cesium assisted sputtering method has been shown superior electrical, mechanical, and optical film properties. However, it is not easy to use cesium assisted sputtering method since ITO film properties are very sensitive to Cesium assisted equipment condition but their mechanism is not yet clearly defined physically or mathematically. Therefore, to optimize deposited ITO film characteristics, development of accurate and reliable process model is essential. For this, in this work, we developed ITO film deposition process model using neural networks and design of experiment (DOE). Developed model prediction results are compared with conventional statistical regression model and developed neural process model has been shown superior prediction results on modeling of ITO film thickness, sheet resistance, and transmittance characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.525-526
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• 2008

For measuring nonlinear Vehicle Modeling based on 7-Depth Sensor, the neural networks are proposed m adaptive and in realtime. The structure of it is similar to recurrent neural networks; a delayed output as the input and a delayed error between the output of plant and neural networks as a bias input. In addition, we compute the desired value of hidden layer by an optimal method instead of transfering desired values by backpropagation and each weights are updated by RLS(Recursive Least Square). Consequently, this neural networks are not sensitive to initial weights and a learning rate, and have a faster convergence rate than conventional neural networks. This new neural networks is Error Estimated Neural Networks. We can estimate nonlinear models in realtime by the proposed networks and control nonlinear models.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.201-204
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• 2001

In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.