• Journal of the Korean Ceramic Society
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• v.49 no.5
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• pp.448-453
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• 2012

Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.

• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.257-262
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• 1997

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.

• Journal of Ceramic Processing Research
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• v.13 no.spc2
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• pp.403-406
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• 2012

Effect of thickness on ZnO properties including the compositional ratio and crystallinity has been systematically investigated using a variety of characterization tools of x-ray diffraction, field emission scanning electron microscopy, x-ray fluorescence and x-ray photoelectron spectroscopy. Interestingly, it was observed that ZnO films below 80 nm in thickness were in oxygen deficiency, while the oxygen ratio was increased in the films above the thickness, although the compositional ratio of ZnO film was not linearly varied with increasing film thickness. Also, ZnO crystallinity, which is characterized by (002) diffraction pattern, was clearly improved with increasing film thickness. The properties of ZnO film with different sputtering time and the nature of direct current reactive sputtering process were discussed in terms of compositional ratio, especially oxygen ratio in ZnO film.

• Bulletin of the Korean Chemical Society
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• v.32 no.9
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• pp.3395-3399
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• 2011

Copper oxide thin films were synthesized by reactive radio frequency magnetron sputtering at different oxygen gas ratios. The chemical and physical properties of the thin films were investigated by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray diffraction (XRD). XPS results revealed that the dominant oxidation states of Cu were $Cu^0$ and $Cu^+$ at 0% oxygen ratio. When the oxygen ratios increased above 5%, Cu was oxidized as CuO as detected by X-ray induced Auger electron spectroscopy and the $Cu(OH)_2$ phase was confirmed independent of the oxygen ratio. The valence band maxima were $1.19{\pm}0.09$ eV and an increase in the density of states was confirmed after formation of CuO. The thickness and roughness of copper oxide thin films decreased with increasing oxygen ratio. The crystallinity of the copper oxide films changed from cubic Cu through cubic $Cu_2O$ to monoclinic CuO with mean crystallite sizes of 8.8 nm (Cu) and 16.9 nm (CuO) at the 10% oxygen ratio level.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.142-145
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the dc bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2032-2034
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• 2000

The performance of ac plasma display panels (PDP) is influenced strongly by the surface glow discharge characteristics on the MgO thin films. This paper deals with the surface slew discharge characteristics and some physical properties of MgO thin films prepared by reactive RF planar unbalanced magnetron sputtering in connection with ac PDP. The samples prepared with the do bias voltage of -10V showed lower discharge voltage and lower erosion rate by ion bombardment than those samples prepared by conventional magnetron sputtering or E-beam evaporation. The main factor that improves the discharge characteristics by bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process.

• The Journal of Advanced Prosthodontics
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• v.5 no.4
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• pp.382-387
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• 2013

PURPOSE. Although several surface treatments have been recently investigated both under in vitro and in vivo conditions, controversy still exists regarding the selection of the most appropriate zirconia surface pre-treatment. The purpose of this study was to evaluate the effect of alumina (Al) and aluminium nitride (AlN) coating on the shear bond strength of adhesive resin cement to zirconia core. MATERIALS AND METHODS. Fifty zirconia core discs were divided into 5 groups; air particle abrasion with 50 ${\mu}m$ aluminum oxide particles ($Al_2O_3$), polishing + Al coating, polishing + AlN coating, air particle abrasion with 50 ${\mu}m$ $Al_2O_3$ + Al coating and air particle abrasion with 50 ${\mu}m$ $Al_2O_3$ + AlN coating. Composite resin discs were cemented to each of specimens. Shear bond strength (MPa) was measured using a universal testing machine. The effects of the surface preparations on each specimen were examined with scanning electron microscope (SEM). Data were statistically analyzed by one-way ANOVA (${\alpha}$=.05). RESULTS. The highest bond strengths were obtained by air abrasion with 50 ${\mu}m$ $Al_2O_3$, the lowest bond strengths were obtained in polishing + Al coating group (P<.05). CONCLUSION. Al and AlN coatings using the reactive magnetron sputtering technique were found to be ineffective to increase the bond strength of adhesive resin cement to zirconia core.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.414-423
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• 2016

In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.551-555
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• 1999

The deposition condition to obtain stoichiometric $Ta_2$O\ulcorner films, which is still controversial, using magnetron reactive sputtering was studied. The films were deposited by varying $O_2$gas flow rate with sputtering power and Ar gas flow rate of 200W and 60 sccm fixed. At the conditions of $O_2$ gas flow rate over 20 sccm, amorphous Tantalum oxide films with the refractive index of 2.1 and dielectric constant of 25 were deposited. Among those films, the capacitors dielectric properties of the film deposited at the condition of $O_2$ gas flow rate 50 sccm was best, the leakage current was 1$\times$10\ulcornerA/$\textrm{cm}^2$ at the electric field strength of 0.5 MC/cm and the breakdown field strength was over 2.0 MV/cm. This result could be explained from the analysis comparing with a standard sample using RBS because the composition of the film deposited at this condition was closest to the stoichiometric $Ta_2$O\ulcorner. The result of XPS analysis convinced that this film was stoichiometric $Ta_2$O\ulcorner film. A maximum cathode voltage was observed when $O_2$gas flow rate was 30 sccm. This shows that the Schiller's proposition that one can obtain stoichiometric films at the condition of maximum cathode voltage is not correct and more oxygen than that of the maximum voltage condition is necessary to deposit the stoichiometric Ta$_2$O\ulcorner films.