The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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C-axis Orientation and Growth Structure of AIN Thin Films on $SiO_2$/Si Substrates Deposited by Reactive RF Magnetron Sputtering

  • Joo, Han-Yong (School of Materials Science and Engineering, Seoul National University) ;
  • Lee, Jae-Bin (School of Materials Science and Engineering, Seoul National University) ;
  • Kim, Hyeong-Joon (School of Materials Science and Engineering, Seoul National University)
  • Published : 1997.12.01
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Abstract

Aluminum nitride(AIN) thin films were deposited on SiO$_2$/Si substrates by reactive sputtering for the application of SAW devices. The major deposition parameters such as pressure, nitrogen fraction, rf power, substrate distance were changed to find out the optimal condition for c-axis oriented thin films on an amorphous substrate. The effects of deposition parameters on the crystal structure, residual stress, and growth morphology of thin films were characterized by XRD, SEM, and TEM. The FWHM of (002) rocking curve of the films deposited at the proper condition was lower than 2.2$^{\circ}$(C=0.93$^{\circ}$). Cross-sectional TEM showed that self-aligned structure was developed just after slightly random growth at the initial stage. The frequency characteristics of test device fabricated from AIN thin films confirmed their piezoelectric property and applicability for SAW devices.

Keywords

References

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