• 제목/요약/키워드: magnetic random access memory

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Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell

  • Park, Wanjun;Song, I-Hun;Park, Sangjin;Kim, Teawan
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제2권3호
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    • pp.197-204
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    • 2002

  • DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

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SPIN ENGINEERING OF FERROMAGNETIC FILMS VIA INVERSE PIEZOELECTRIC EFFECT

  • Lee, Jeong-Won;Shin, Sung-Chul;Kim, Sang-Koog
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.188-189
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    • 2002

  • One of the current goals in memory device developments is to realize a nonvolatile memory, i.e., the stored information maintains even when the power is turned off. The representative candidates for nonvolatile memories are magnetic random access memory (MRAM) and ferroelectric random access memory (FRAM). In order to achieve a high density memory in MRAM device, the external magnetic field should be localized in a tiny cell to control the direction of spontaneous magnetization. (omitted)

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Macro-Model of Magnetic Tunnel Junction for STT-MRAM including Dynamic Behavior

  • Kim, Kyungmin;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권6호
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    • pp.728-732
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    • 2014

  • Macro-model of magnetic tunnel junction (MTJ) for spin transfer torque magnetic random access memory (STT-MRAM) has been developed. The macro-model can describe the dynamic behavior such as the state change of MTJ as a function of the pulse width of driving current and voltage. The statistical behavior has been included in the model to represent the variation of the MTJ characteristic due to process variation. The macro-model has been developed in Verilog-A.

  • https://doi.org/10.5573/JSTS.2014.14.6.728 인용 PDF KSCI

MTJ based MRAM Core Cell

  • Park, Wanjun
    • Journal of Magnetics
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    • 제7권3호
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    • pp.101-105
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    • 2002

  • MRAM (Magnetoresistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. This paper is for testing the actual electrical parameters to adopt MRAM technology in the semiconductor based memory device. The discussed topics are an actual integration of MRAM core cell and its properties such as electrical tuning of MOS/MTJ for data sensing and control of magnetic switching for data writing. It will be also tested that limits of the MRAM technology for a high density memory.

  • https://doi.org/10.4283/JMAG.2002.7.3.101 인용 PDF KSCI

Effects of Etch Parameters on Etching of CoFeB Thin Films in $CH_4/O_2/Ar$ Mix

  • Lee, Tea-Young;Lee, Il-Hoon;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.390-390
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    • 2012

  • Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

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