• 한국컴퓨터정보학회논문지
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• 제21권5호
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• pp.1-10
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• 2016

Magnetic disks have been used for decades in auxiliary storage devices of computer systems. In recent years, the use of NAND flash memory, which is called SSD, is increased as auxiliary storage devices. However, NAND flash memory, unlike traditional magnetic disks, necessarily performs the erase operation before the write operation in order to overwrite data and this leads to degrade the system lifetime and performance of overall NAND flash memory system. Moreover, NAND flash memory has the lower endurance, compared to traditional magnetic disks. To overcome this problem, this paper proposes EPET (Enhanced Prediction and Elapsed Time) wear leveling technique, which is especially efficient to portable devices. EPET wear leveling uses the advantage of PET (Prediction of Elapsed Time) wear leveling and solves long-term system failure time problem. Moreover, EPET wear leveling further improves space efficiency. In our experiments, EPET wear leveling prolonged the first bad time up to 328.9% and prolonged the system lifetime up to 305.9%, compared to other techniques.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.339-342
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• 1988

Typical magnetic bubble propagation failure modes of ion implanted magnetic bubble computer memory devices were observed and their failure mechanisms were analize. The skidding failure mode is due to the pushing of a strong repulsive charged wall. If this pushing is stronger than the edge affinity of the bubble in the cusp, the bubble moves out of the cusp when it is supposed to stay there. The stripeout failure modes across the adjacent track or along the track can be explained by considering the relative strength of the charged wall and the edge affinity encountered by both ends of the stripe. The skipping of the first cusp of a track is believed to be due to the whipping motion of the charged wall. The bubble moves directly to the second cusp via the long charged wall pointing to the second cusp skipping the first cusp.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권3호
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• pp.197-204
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• 2002

DRAM, SRAM, and FLASH memory are three major memory devices currently used in most electronic applications. But, they have very distinct attributes, therefore, each memory could be used only for limited applications. MRAM (Magneto-resistive Random Access Memory) is a promising candidate for a universal memory that meets all application needs with non-volatile, fast operational speed, and low power consumption. The simplest architecture of MRAM cell is a series of MTJ (Magnetic Tunnel Junction) as a data storage part and MOS transistor as a data selection part. To be a commercially competitive memory device, scalability is an important factor as well. This paper is testing the actual electrical parameters and the scaling factors to limit MRAM technology in the semiconductor based memory device by an actual integration of MRAM core cell. Electrical tuning of MOS/MTJ, and control of resistance are important factors for data sensing, and control of magnetic switching for data writing.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2002년도 추계학술대회논문집
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• pp.582-587
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• 2002

Current information storage devices, such as HDD, CD/DVD-ROM/RW, probe-based memory and hologram memory, are compared with biological information storage mechanisms in DNA and brain memory. Newly developed approaches to overcome the limit of storage capacity are introduced in both magnetic and optical recording devices. Linear and areal density of information stored in the biological and mechanical storages are compared for the applications and developments of new storage devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.243.1-243.1
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• 2011

We demonstrate a facile and robust layer-by-layer (LbL) assembly method for the fabrication of nonvolatile resistive switching memory (NRSM) devices based on superparamagnetic nanocomposite multilayers, which allows the highly enhanced magnetic and resistive switching memory properties as well as the dense and homogeneous adsorption of nanoparticles, via nucleophilic substitution reaction (NSR) in nonpolar solvent. Superparamagnetic iron oxide nanoparticles (MP) of about size 12 nm (or 7 nm) synthesized with oleic acid (OA) in nonpolar solvent could be converted into 2-bromo-2-methylpropionic acid (BMPA)-stabilized iron oxide nanoparticles (BMPA-MP) by stabilizer exchange without change of solvent polarity. In addition, bromo groups of BMPA-MP could be connected with highly branched amine groups of poly (amidoamine) dendrimer (PAMA) in ethanol by NSR of between bromo and amine groups. Based on these results, nanocomposite multilayers using LbL assembly could be fabricated in nonpolar solvent by NSR of between BMPA-MP and PAMA without any additional phase transfer of MP for conventional LbL assembly. These resulting superparamagnetic multilayers displayed highly improved magnetic and resistive switching memory properties in comparison with those of multilayers based on water-dispersible MP. Furthermore, NRSM devices, which were fabricated by LbL assembly method under atmospheric conditions, exhibited the outstanding performances such as long-term stability, fast switching speed and high ON/OFF ratio comparable to that of conventional inorganic NRSM devices produced by vacuum deposition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.448-448
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• 2010

Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >$50{\AA}/s$ for magnetic multi-layer structures using $Cl_2$/Ar plasmas is proposed. However, the chlorinated etch residues on the sidewalls of the etched features tend to severely corrode the magnetic material. Besides avoiding corrosion, during etching facets format the sidewalls of the mask due to physical sputtering of the mask material. Therefore, in this work, magnetic material such as CoFeB was etched in an ICP etching system using the gases which can be expected to form volatile metallo-organic compounds. As the gases, carbon monoxide (CO) and ammonia ($NH_3$) were used as etching gases to form carbonyl volatiles, and the etched features of CoFeB thin films under by Ta masking material were observed with electron microscopy to confirm etched resolution. And the etch conditions such as bias power, gas combination flow, process pressure, and source power were varied to find out and control the properties of magnetic layer during the process.

• 정보저장시스템학회논문집
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• 제1권1호
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• pp.1-22
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• 2005

There are two important trends in the modern information society, including digital networking and ubiquitous environment. Thus it is strongly required to develop new information storage devices such as high density storages to match the increased data capacity and small size storage devices to be applied to the mobile multimedia electronics. So far, many approaches have been studied for the high density memory, including the holographic memory, super-RENS and near-field recording using solid immersion lens (SIL) or nano-probe for the ODD (Optical Disk Drive) system, and the perpendicular magnetic recording and heat-assisted magnetic recording for the HDD (Hard Disk Drive) system. In addition, new mobile storage devices have been prepared using 0.85" HDD and 30mm ODD systems from a lot of foreign and domestic companies and institutes. In this paper, the recent technology trend for the next generation information storage system is summarized to offer a research motivation and encouragement to new researchers in this field with an emphasis on the technical issues of the increase of data capacity and decrease of device size.

• 전자공학회지
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• 제13권1호
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• pp.86-95
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• 1986

The basic physical principles involved in the operation of monolithic magnetic sensors are reviewed and technological aspects outlined. More or less conventional devices based on Hall effect, magnetoresistance or current path deflection are described. It is shown that such sensors with 2, 3, 4 or 5 terminal contacts are achievable with standard silicon integrated circuit process. Several kinds of magnetodiodes (p+nn+,p+n, Schottky, MOS, memory, CMOS) have been fabricated on Si and on SOS films and present attractive properties. Finally, the magneto-transistor family is discussed with emphasis to split-terminals, CMOS, unijunction and fila-mentary devices.

• 정보처리학회논문지D
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• 제15D권5호
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• pp.589-598
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• 2008

최근 휴대용 정보기기 사용이 보편화되어지고, 정보의 디지털화로 인해 휴대용 정보기기에서 처리되어야 하는 정보가 무수히 많아지고 있다. 이로 인해 휴대용 정보기기에서는 정보들을 효과적으로 관리하기 위해 모바일 DBMS의 사용이 요구되고 있다. 또한 휴대용 정보기기에서 보편적으로 사용되는 저장장치는 NAND형 플래시 메모리로 단위 공간당 비용이 기존의 하드디스크에 비해 수십 배 가량 높아 저장 공간의 효율적인 관리가 요구되고 있다. 따라서 본 논문에서는 플래시메모리를 저장매체로 사용하는 모바일 DBMS에서 압축 기법을 사용한 효율적인 데이터 관리 시스템을 제안한다. 제안되는 압축 기반 시스템은 저장 공간의 절약을 가져오고, 데이터 입출력을 줄인다. 이러한 이점은 플래시 메모리의 수명을 연장시키는 효과 또한 기대할 수 있다.

• 한국자기학회지
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• 제9권6호
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• pp.301-305
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• 1999

보자력의 차이는 나타내는 NiFe(60$\AA$)/Co(5$\AA$) 두 자성층으로 구성된 NiFe(60$\AA$)/Co(5$\AA$)/Cu(40~60$\AA$)/Co(30$\AA$) 스핀밸브 박막을 일반적인 사진식각 공정을 사용하여 $\mu\textrm{m}$크기의 자기저항 메모리 셀로 패턴하고, 형상자기이방성이 자기저항 메모리 셀의 스위칭 특성에 미치는 영향에 대해 연구하였다. 자기저항 메모리 셀의 출력 및 스위칭 특성은 셀의 크기에 따라 1mA의 일정한 전류와 30 Oe 이내의 스위칭 자장에서 수 ~ 수십 mV의 출력 전압을 나타내었다. 특히, NiFe/Co/Cu/Co 스핀밸브 박막의 증착시 기판에 의해 유도된 결정성에 의한 일축자기이방성과 스핀밸브 박막을 직사각형 형태의 셀로 패턴할 때 부가되는 형상자기이방성의 크기 및 방향을 적절히 조절함으로써, 메모리 셀을 구성하는 NiFe/Co 층의 스위칭 자장을 약 1/3로 감소시킬 수 있었으며, 이는 자기저항 메모리 셀의 크기가 서브마이크론 범위로 감소될 때 발생하는 스위칭 자장의 증가 문제를 해결하는 데 도움이 될 것으로 사료된다.