A Study On The Propagation Failure Modes of Ion Implanted Magnetic Bubble Computer Memory Devices

이온주입식 자기버블 전산기 기억소자에서의 자기버블 전파실패에 관한 연구

  • Jo, Soon-Chul (Department of Electronics, Soongsil University Magnetic Memory Devices Lab)
  • 조순철 (숭실대학교 전자공학과 자기기억장치연구실)
  • Published : 1988.07.01

Abstract

Typical magnetic bubble propagation failure modes of ion implanted magnetic bubble computer memory devices were observed and their failure mechanisms were analize. The skidding failure mode is due to the pushing of a strong repulsive charged wall. If this pushing is stronger than the edge affinity of the bubble in the cusp, the bubble moves out of the cusp when it is supposed to stay there. The stripeout failure modes across the adjacent track or along the track can be explained by considering the relative strength of the charged wall and the edge affinity encountered by both ends of the stripe. The skipping of the first cusp of a track is believed to be due to the whipping motion of the charged wall. The bubble moves directly to the second cusp via the long charged wall pointing to the second cusp skipping the first cusp.

Keywords