Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.02a
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- Pages.448-448
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- 2010
Selective Etching of Magnetic Layer Using CO/$NH_3$ in an ICP Etching System
- Park, J.Y. (SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University) ;
- Kang, S.K. (SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University) ;
- Jeon, M.H. (SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University) ;
- Yeom, G.Y. (SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University)
- Published : 2010.02.17
Abstract
Magnetic random access memory (MRAM) has made a prominent progress in memory performance and has brought a bright prospect for the next generation nonvolatile memory technologies due to its excellent advantages. Dry etching process of magnetic thin films is one of the important issues for the magnetic devices such as magnetic tunneling junctions (MTJs) based MRAM. CoFeB is a well-known soft ferromagnetic material, of particular interest for magnetic tunnel junctions (MTJs) and other devices based on tunneling magneto-resistance (TMR), such as spin-transfer-torque MRAM. One particular example is the CoFeB - MgO - CoFeB system, which has already been integrated in MRAM. In all of these applications, knowledge of control over the etching properties of CoFeB is crucial. Recently, transferring the pattern by using milling is a commonly used, although the redeposition of back-sputtered etch products on the sidewalls and the low etch rate of this method are main disadvantages. So the other method which has reported about much higher etch rates of >
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