• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.264-264
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• 2012

As an environment-friendly alternative energy resource, ethanol may be used to obtain hydrogen, a clean energy source. Thus, studies on catalytic reactions involving ethanol have been studied to understand the underlying principles in the reaction mechanism using various oxide-supported catalysts. Among them, Au-based catalysts have shown a superior activity in producing hydrogen gas. In the present study, Au/$TiO_2$ catalysts were prepared by deposition-precipitation method to understand their catalytic activities toward ethanol and acetaldehyde with increasing gold loading, especially at the very low Au loading regime. A commercially available $TiO_2$ (Degussa P-25) was employed and the Au loading was varied to 0, 0.1, 0.5, and 1.0 wt% respectively. The catalysts showed characteristic x-ray diffraction (XRD) features at $2{\theta}=78.5^{\circ}$ that could be assigned to the presence of gold nanoparticles. Its reactivity measurements were performed under a constant flow of ethanol and acetaldehyde at a flow rate of ${\sim}0.6{\mu}mol/sec$ and the substrate temperature was slowly raised at a rate of 0.2 K/sec. We observed that the overall reactivity of the catalysts increased with increasing Au loading along with selectivity favoring dehydrogenation to product hydrogen gas. In addition, we disclosed various reaction channels involving competitive reaction paths such as dehydrogenation, dehydration, and condensation. In addition, subsequent reactions of acetaldehyde obtained from dehydrogenation of ethanol, were found to occur and produce butene, crotonaldehyde, furan, and benzene. Based on the results, we proposed overall reaction pathways of such reaction channels.

• 한국분말재료학회지
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• 제22권6호
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• pp.413-419
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• 2015

Lanthanum zirconate, $La_2Zr_2O_7$, is one of the most promising candidates for next-generation thermal barrier coating (TBC) applications in high efficient gas turbines due to its low thermal conductivity and chemical stability at high temperature. In this study, bulk specimens and thermal barrier coatings are fabricated via a variety of sintering processes as well as suspension plasma spray in lanthanum zirconates with reduced rare-earth contents. The phase formation, microstructure, and thermo-physical properties of these oxide ceramics and coatings are examined. In particular, lanthanum zirconates with reduced rare-earth contents in a $La_2Zr_2O_7-4YSZ$ composite system exhibit a single phase of fluorite or pyrochlore after fabricated by suspension plasma spray or spark plasma sintering. The potential of lanthanum zirconate ceramics for TBC applications is also discussed.

• 한국세라믹학회지
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• 제34권6호
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• pp.652-658
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• 1997

The phase stability in the interface of Sr-doped LaMnO3(LSM)/Gd-doped CeO2(CGO) was examined in this study in order to check the feasibility of using LSM as the cathode material in a low-temperature SOFC(solid oxide fuel cell) using CGO as the electrolyte. For the purpose, CGO powders of Ce0.82Gd0.18O0.91 and two LSM powders having different compositions, La0.9Sr0.1MnO3(LSM10) and La0.5Sr0.5MnO3(LSM50), were synthesized using Pechini method. Then, specimens having the LSM/CGO interface were prepared, heat-treated at 130$0^{\circ}C$ for up to 3 days, and analyzed by XRD and STEM/EDX. Face-centered cubic CGO powders of less than 10 nm size were obtained by calcination of polymeric precursor formed in the process at 45$0^{\circ}C$. Higher calcination temperature of $700^{\circ}C$ was necessary for monoclinic LSM10 and cubic LSM50 powders. LSM powders were coarser than CGO and observed to be in the range of 50~100 nm. No trace of LSM-CGO interaction product was found in the XRD pattern. Also it was known from the concentration profile in the vicinity of the interface that interdiffusion was occurred over only a small penetration depth of ~100 nm order.

• Bulletin of the Korean Chemical Society
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• 제35권10호
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• pp.2974-2978
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• 2014

$Mn_3O_4$/multi-walled carbon nanotube (MWCNT) composites are prepared by chemically synthesizing $Mn_3O_4$ nanoparticles on a MWCNT film at room temperature. Structural and morphological characterization has been carried out using X-ray diffraction (XRD) and scanning and transmission electron microscopies (SEM and TEM). These reveal that polycrystalline $Mn_3O_4$ nanoparticles, with sizes of about 10-20 nm, aggregate to form larger nanoparticles (50-200 nm), and the $Mn_3O_4$ nanoparticles are attached inhomogeneously on MWCNTs. The electrochemical behavior of the composites is analyzed by cyclic voltammetry experiment. The $Mn_3O_4$/MWCNT composite exhibits a specific capacitance of $257Fg^{-1}$ at a scan rate of $5mVs^{-1}$, which is about 3.5 times higher than that of the pure $Mn_3O_4$. Cycle-life tests show that the specific capacitance of the $Mn_3O_4$/MWCNT composite is stable up to 1000 cycles with about 85% capacitance retention, which is better than the pure $Mn_3O_4$ electrode. The improved supercapacitive performance of the $Mn_3O_4$/MWCNT composite electrode can be attributed to the synergistic effects of the $Mn_3O_4$ nanoparticles and the MWCNTs, which arises not only from the combination of pseudocapacitance from $Mn_3O_4$ nanoparticles and electric double layer capacitance from the MWCNTs but also from the increased surface area, pore volume and conducting property of the MWCNT network.

• 한국재료학회지
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• 제11권9호
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• pp.769-775
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• 2001

High quality PZT piezoelectric thin films were sputter- deposited on$ RuO_2$/$SiO_2$/Si substrates by using 2-step deposition method. As the first step, PZT seed layers were fabricated at a low temperature($475^{\circ}C$ ) to form a pure perovskite phase by reducing the volatility of Pb oxide. and then, as the second step, the PZT films were deposited at high temperatures ($530^{\circ}C$~$570^{\circ}C$) to reduce the defect density in the films. By this method, the pure perovskite phase was obtained at high deposition temperature range ($530^{\circ}C$~$570^{\circ}C$) and the superior electrical properties of PZT films were obtained on $RuO_2$substrate : 2Pr : 60$\mu$C/$\textrm{cm}^2$, $E_c: 60kV/cm, \;J_t: 10^{-6}A/cm^2\; at\; 250kV/cm$. The residual stress of PZT films fabricated by the 2-step deposition method was tensile and below 150MPa. It was attempted to control the residual stress in the PZT films by applying a negative bias to the substrate. As the amplitude of the substrate bias was increased, the residual tensile stress was slightly decreased, however, the ferroelectric properties of PZT films were degraded by ion bombardment.

• 마이크로전자및패키징학회지
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• 제20권1호
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• pp.33-37
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• 2013

전구체의 농도가 ZnO 나노로드의 성장에 미치는 영향에 대하여 알아보았다. ZnO 나노로드는 수열합성법에 의하여 c-plane 사파이어 상에서 성장되었으며, 전구체 농도가 0.01M에서 0.025M로 증가할 때의 형태적, 구조적, 광학적 성질의 변화에 대하여 주사전자현미경, X-선 회절분석기, 그리고 Photoluminescence(PL) 분석을 통하여 알아보았다. 전구체의 몰 분율이 증가함에 따라서 나노로드의 두께와 길이가 모두 증가하는 경향을 보였으며, 성장 방향은 모두 c-axis 방향임을 알 수 있었다. PL 측정에서의 380 nm파장의 강한 emission으로부터, 수열합성법에 의하여 성장된 ZnO 나노로드는 결함의 영향이 적고 양호하게 성장되어 있음을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제22권6호
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• pp.470-475
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• 2009

We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.131-131
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• 2010

We compared the electrical, optical, structural, and interface properties of indium zinc oxide (IZO)-Ag-IZO and IZO-Au-IZO multilayer electrodes deposited by linear facing target sputtering system at room temperature for organic photovoltaics. The IZO-Ag-IZO and IZO-Au-IZO multilayer electrodes show a significant reduction in their sheet resistance (4.15 and 5.49 Ohm/square) and resistivity ($3.9{\times}10^{-5}$ and $5.5{\times}10^{-5}$Ohm-cm) with increasing thickness of the Ag and Au layers, respectively. In spite of its similar electrical properties, the optical transmittance of the IZO-Ag-IZO electrode is much higher than that of the IZO-Au-IZO electrode, due to the more effective antireflection effect of Ag than Au in the visible region. In addition, the Auger electron spectroscopy depth profile results for the IZO/Ag/IZO and IZO/Au/IZO multilayer electrodes showed no interfacial reaction between the IZO layer and Ag or Au layer, due to the low preparation temperature. To investigate in detail the Ag and Au structures on the bottom IZO electrode with increasing thickness, a synchrotron x-ray scattering examination was employed. Moreover, the OSC fabricated on the IZO-Ag-IZO electrode shows a higher power conversion efficiency (3.05%) than the OSC prepared on the IZO-Au-IZO electrode (2.66%), due to its high optical transmittance in the wavelength range of 400-600 nm, which is the absorption wavelength of the P3HT:PCBM active layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• Current Applied Physics
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• 제18권12호
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• pp.1577-1582
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• 2018

While controlling the cation contents in perovskite rare-earth nickelate thin films, a metal-to-insulator phase transition is reported. Systematic control of cation stoichiometry has been achieved by manipulating the irradiation of excimer laser in pulsed laser deposition. Two rare-earth nickelate bilayer thin-film heterostructures with the controlled cation stoichiometry (i.e. stoichiometric and Ni-excessive) have been fabricated. It is found that the Ni-excessive nickelate film is structurally less dense than the stoichiometric film, albeit both of them are epitaxial and coherent with respect to the underlying substrate. More interestingly, as a temperature decreases, a metal-to-insulator transition is only observed in the Ni-excessive nickelate films, which can be associated with the enhanced disproportionation of the Ni charge valence. Based on our theoretical results, possible origins (e.g. anti-site defects) of the low-temperature insulating state are discussed with the need of future work for deeper understanding. Our work can be utilized to realize unusual physical phenomena (e.g. metal-to-insulator phase transitions) in complex oxide films by manipulating the chemical stoichiometry in pulsed laser deposition.