• Korean Journal of Materials Research
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• v.24 no.9
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• pp.443-450
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• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Journal of the Korean Society of Marine Environment & Safety
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• v.26 no.6
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• pp.751-758
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• 2020

SCR technology, which uses urea-water as a NO_x reducing agent, has been widely used to reduce NO_x in marine diesel engines. However, as an alternative NO_x reducing agent, solid-phase ammonium carbamate has several advantages, such as low-temperature NO_x reduction performance and NH₃ storage capacity. This study presents a method for evaluating the purity of ammonium carbamate using EA, FTIR, and XRD to investigate the change in the material characteristics of ammonium carbamate when it is exposed to various temperature and pressure conditions. In this study, it was found that the purity of ammonium carbamate can be effectively evaluated via EA analysis. The FTIR analysis results confirmed that the properties of ammonium carbamate did not change even after repeated heating and cooling under thermal decomposition temperature conditions, which may be applied to the SCR system of marine diesel engines. Additionally, it was found that when ammonium carbamate was exposed to the atmosphere for a long time, it transformed into ammonium carbonate.

• Journal of Conservation Science
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• v.30 no.4
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• pp.335-343
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• 2014

This study classified the result of non-metallic inclusion analysis and result of microstructure investigation on the ironware excavated in the Baekje region into Han River, Geum River, and Yeongsan River to estimate the iron making temperature and study the characteristics of regional and temporal characteristics of the heat treatment technology and steel making technology. Regardless of era, bloom iron and sponge iron are judged to be the major method for making as a directreduction process in all three regions. The result of the reinterpretation of the non-metallic inclusion by the oxide ternary constitutional diagram suggest that the temperature inside of the furnace is estimated to be between $1,100{\sim}1,300^{\circ}C$ while making the steel. The magnetic iron ores are the major raw material of steel ore and irons with high $TiO_2$ are estimated to use iron sands. Ironware with $CaO/SiO_2$ rate higher than 0.4% are considered to have artificially added the flux of calcareous materials. It was found that the iron making method is the solid caburizing-steel which caburizes low-carbon steels by the CO gas and $CO_2$ gas created when heating the forging furnace with charcoal. Also, the ironware manufacturers in the Baekje during 3rd century recognized the heat treatment technology as they performed carburizing process and quenching to intentionally increase the strength of necessary parts.

• Journal of the Korean Electrochemical Society
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• v.10 no.3
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• pp.207-212
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• 2007

[ $PSCF3737(Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3)$ ] is a good candidate cathode material for IT-SOFC(intermediate temperature solid oxide fuel cell) because of high MIEC(mixed ionic electronic conductor) conductivity. In this study, the characteristics of PSCF3737 was investigated and optimizations of sintering temperature and thickness for $PSCF3737(Pr_{0.3}Sr_{0.7}Co_{0.3}Fe_{0.7}O_3)$ was carried out. Impedance responses were divided into two parts by frequency region. Middle frequency part (${\sim}10^2\;Hz$) was concerned with oxygen reduction reaction on surface and low frequency part (${\sim}10^{-1}\;Hz$) was related with oxygen diffusion. The reasonable sintering temperature and thickness of cathode were $1200^{\circ}C$ and about $27\;{\mu}m$ with regard to EIS(electrochemical impedance spectroscopy). ASR(areas specific resistance) of optimized cathode is $0.115\;{\Omega}\;cm^2$ at $700^{\circ}C$.

• Journal of Sensor Science and Technology
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• v.8 no.2
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• pp.115-123
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• 1999

A micro-gas sensor with heater and sensing electrode on the same plane was fabricated on phosphosilicate glass(PSG, 800nm)/$Si_3N_4$ (150nm) dielectric membrane. PSG film was provided by atmospheric pressure chemical vapor deposition(APCVD), and $Si_3N_4$ film by low pressure chemical vapor deposition (LPCVD). Total area of the fabricated device was $3.78{\times}3.78mm^2$. The area of diaphragm was $1.5{\times}1.5mm^2$, and that of the sensing layer was $0.24{\times}0.24mm^2$. Finite-element simulation was employed to estimate temperature distribution for a square-shaped diaphragm. The power consumption of Pt heater was about 85mW at $350^{\circ}C$. Tin thin films were deposited on the silicon substrate by thermal evaporation at room temperature and $232^{\circ}C$, and tin oxide films($SnO_2$) were prepared by thermal oxidation of the metallic tin films at $650^{\circ}C$ for 3 hours in oxygen ambient. The film analyses were carried out by SEM and XRD techniques. Effects of humidity and ambient temperature on the resistance of the sensing layer were found to be negligible. The fabricated micro-gas sensor exhibited high sensitivity to butane gas.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.346-351
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• 2002

The electrical conductivity and phase stability of $ZrO_2$ doped with $Sc_2O_3$ and $CeO_2$ were investigated in order to search for better solid electrolyte material for solid oxide fuel cell. Present study showed that $ZrO_2$ doped with $Sc_2O_3$ and $CeO_2$ exhibited no phase transition during the heat treatment up to $1350^{Circ}C∼1550^{Circ}C$ and was stable as a cubic phase in whole temperature ranges. The $ZrO_2$ doped with $Sc_2O_3$ and $CeO_2$ showed much higher electrical conductivity than YSZ in the temperature range of $300∼^{Circ}C$ and better long term stability than other sc-$ZrO_2$ based electrolyte that showed the possibility as a strong candidate electrolyte material for intermediate-or low-temperature SOFC.

• Journal of Sensor Science and Technology
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• v.28 no.1
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• pp.41-46
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• 2019

In order to develop novel thermal imaging materials for microbolometer applications, $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ ($0.18{\leq}x{\leq}0.26$) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ films annealed at $380^{\circ}C$ for five hours. The resistivity (${\rho}$) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the $Mn^{3+}/Mn^{4+}$ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between $Mn^{3+}$ and $Mn^{4+}$ cations discussed in the proposed study. The effects of $Cu^+$ and $Cu^{2+}$ cations on the hopping mechanism is also discussed. Obtained results indicate that $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ thin films with low temperature annealing and superior electrical properties (${\rho}{\leq}54.83{\Omega}{\cdot}cm$, temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.

• Journal of the korean academy of Pediatric Dentistry
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• v.26 no.2
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• pp.365-376
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• 1999

The importance of finishing and polishing the restoration has been described by several authors. The final step provides for improved metallurgical properties, better marginal adaptation, reduced plaque accumulation. Unfortunately, finishing of the restorations can produce damage from temperature rises at the pulpal wall. The aim of this study was to determine the changes in temperature can be occurred during the use of finishing and polishing instruments under a variety of conditions. ; with or without a water coolant, intermittent or continuous operation, high or low rotation speed, remaining dentin thickness and various restorative materials. Class V preparations were cut on extracted molars and restored with composite resin(Z 100), resin-modified glass ionomer cements(Dyract, Fuji II LC), and amalgam. Finishing was done with aluminum oxide coated disc($Sof-lex^{(R)}$ polishing disc, 3M, USA). The following results were obtained. 1. The rise of temperature during polishing of amalgam restorations was the highest among the all experimental groups except polishing with water coolant(P<0.05). However, there were no statistical differences in temperature rises between Z 100, Dyract and Fuji II LC(P>0.05). 2. The intrapulpal temperature was greatly influenced by the applied time, and intermittent polishing was showed significantly lower temperature rises than continuous polishing(P<0.01). 3. The intrapulpal temperature was increased according to the application of polishing regard less of using water coolant. However, polishing with water coolant showed significantly lower temperature in the pulp than not used water coolant(P<0.01).

• Journal of the Korean Society of Radiology
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• v.4 no.4
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• pp.25-28
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• 2010

In this paper, the fabrication and feasibility study of clinical application with euripium doped gadollium oxide ($Gd_2O_3$:Eu) nano phosphor derived by low-temperature solution combustion method. From the fabricated phosphor, the photoluminescent characteristic and linearity as a function of phosphor film thickness were investigated to evaluate x-ray converstion properties. From the experimental results, the luminescent intensity was $2945pC/cm^2$-mR at $270{\mu}m$ $Gd_2O_3$:Eu film and this value is higher 1.2 time the conventional bulk phosphor, which is possible to imaging acquisition. And good linearity was shown at x-ray exposure range for clinical diagnostic application.

• Korean Chemical Engineering Research
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• v.43 no.1
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• pp.85-91
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• 2005

$SnO_2$ films were prepared at room temperature under a $(CH_3)_4Sn-H_2-O_2$ atmosphere in order to obtain transparent conductive polymer by using ECR-MOCVD (Electron Cyclotron resonance -Metal Organic Chemical Vapor Deposition) system. The electrical properties of the films were investigated as function of process parameters such as deposition time, microwave power, magnetic current power, magnet/showering/substrate distance and working pressure. An increase in microwave power and magnetic current power brought on $SnO_2$ film formation with low electric resistivity. On the other hand, the effects of process parameters described above on optical properties were insignificant in the range of our experimental scope. The transmittance and reflectance of the films prepared by the ECR-MOCVD exhibited their average values of 93-98% at wave length range of 380-780 nm and 0.1-0.5%, respectively. The grain size of the $SnO_2$ films that are also insensitive with the process parameters were in the range of 20-50 nm. On the basis of experimental data obtained in the present study, electrical resistivity of $7.5{\times}10^{-3}ohm{\cdot}cm$, transmittance of 93%, and reflectance of 0.2% can be taken as optimum values.