Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Fabrication and Electrical Property Analysis of [(Ni0.3Mn0.7)1-xCux]3O4 Thin Films for Microbolometer Applications

마이크로볼로미터용 [(Ni0.3Mn0.7)1-xCux]3O4 박막의 제작 및 전기적 특성 분석

  • Choi, Yong Ho (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeong, Young Hun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Yun, Ji Sun (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Paik, Jong Hoo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Hong, Youn Woo (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Cho, Jeong Ho (Electronic Materials & Component Center, Korea Institute of Ceramic Engineering & Technology)
  • 최용호 (한국세라믹기술원 전자소재부품센터) ;
  • 정영훈 (한국세라믹기술원 전자소재부품센터) ;
  • 윤지선 (한국세라믹기술원 전자소재부품센터) ;
  • 백종후 (한국세라믹기술원 전자소재부품센터) ;
  • 홍연우 (한국세라믹기술원 전자소재부품센터) ;
  • 조정호 (한국세라믹기술원 전자소재부품센터)
  • Received : 2018.11.27
  • Accepted : 2018.01.25
  • Published : 2019.01.31
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Abstract

In order to develop novel thermal imaging materials for microbolometer applications, $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ ($0.18{\leq}x{\leq}0.26$) thin films were fabricated using metal-organic decomposition. Effects of Cu content on the electrical properties of the annealed films were investigated. Spinel thin films with a thickness of approximately 100 nm were obtained from the $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ films annealed at $380^{\circ}C$ for five hours. The resistivity (${\rho}$) of the annealed films was analyzed with respect to the small polaron hopping model. Based on the $Mn^{3+}/Mn^{4+}$ ratio values obtained through x-ray photoelectron spectroscopy analysis, the hopping mechanism between $Mn^{3+}$ and $Mn^{4+}$ cations discussed in the proposed study. The effects of $Cu^+$ and $Cu^{2+}$ cations on the hopping mechanism is also discussed. Obtained results indicate that $[(Ni_{0.3}Mn_{0.7})_{1-x}Cu_x]_3O_4$ thin films with low temperature annealing and superior electrical properties (${\rho}{\leq}54.83{\Omega}{\cdot}cm$, temperature coefficient of resistance > -2.62%/K) can be effectively employed in applications involving complementary metal-oxide semiconductor (CMOS) integrated microbolometer devices.

Keywords

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Fig. 1. Cross-sectional SEM image of [(Ni0.3Mn0.7)1-xCux]3O4 (x=0.18) thin film annealed at 380℃ for 5 h.

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Fig. 2. Surface FE-SEM image of [(Ni0.3Mn0.7)1-xCux]3O4(x=0.22) thin film annealed at 380℃ for 5 h.

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Fig. 3. FT-IR spectra of [(Ni0.3Mn0.7)1-xCux]3O4 thin films annealed at 380℃ for 5 h.

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Fig. 4. XPS spectra of (a) Mn 2p3/2 and (b) Cu 2p3/2 signals of [(Ni0.3Mn0.7)1-xCux]3O4 (x=0.18) thin film annealed at 380℃ for 5 h.

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Fig. 5. Resistivity of [(Ni0.3Mn0.7)1-xCux]3O4 thin films annealed at 380℃ for 5 h.

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Fig. 6. Plot of ln(ρ/T) vs 1/T for [(Ni0.3Mn0.7)1-xCux]3O4 thin films annealed at 380℃ for 5 h.

Table 1. XPS results of [(Ni0.3Mn0.7)1-xCux]3O4 thin films annealed at 380℃ for 5 h.

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Table 2. The resistivity (ρ), characteristic temperature (T0), activation energy (Ea) and temperature coefficient of resistance (TCR) of [(Ni0.3Mn0.7)1-xCux]3O4 thin films annealed at 380 for 5 h.

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