• Journal of the Korean Ceramic Society
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• v.52 no.6
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• pp.435-440
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• 2015

It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.509-510
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• 2007

The Breakdown properties of epoxy composites are used for transformers and sensor, which has been studied. As a result, From the measurements of breakdown voltage, the more hardener is increased the stronger breakdown strength at low temperature because the ester of hardener is increased. Breakdown strength at the high temperature is decreased because the temperature at $110^{\circ}C$ is near at $T_g$. When the filler is added, between epoxy and silica is formed interface. Therefore the charge is accumulated in it, and the electric field is concentrated, and breakdown strength is decreased than non-filled specimens. In the case of specimens, the treated with silane, the breakdown strength becomes much higher since this is suggested that silane coupling agent has been improved chemical bonding in the interfaces and has been relaxed the electric filed concentration.

• Corrosion Science and Technology
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• v.22 no.4
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• pp.257-264
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• 2023

Ti-6Al-4V alloys are mainly used as dental materials due to their excellent biocompatibility, corrosion resistance, and chemical stability. However, they have a low bioactivity with bioinertness in the body. Therefore, they could not directly bond with human bone. To improve their applications, their bone bonding ability and bone formation capacity should be improved. Thus, the objective of this study was to improve the bioinert surface of titanium alloy substrate to show bioactive characteristics by performing surface modification using wollastonite powder. Commercial bioactive wollastonite powder was successfully deposited onto Ti-6Al-4V alloy using a room temperature spray process. It was found that wollastonite-coated layer showed homogeneous microstructure and uniform thickness. Corrosion resistance of Ti-6Al-4V alloy was also improved by plasma electrolytic oxidation treatment. Its wettability and bioactivity were also greatly increased by wollastonite coating. Results of this study indicate that both plasma electrolytic oxidation treatment and wollastonite coating by room temperature spray process could be used to improve surface bioactivity of Ti-6Al-4V alloy substrate.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Journal of Sensor Science and Technology
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• v.12 no.5
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• pp.199-204
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• 2003

This paper describes on the fabrication and characteristics of a ceramic thin-film pressure sensor based on Ta-N strain-gauges for harsh environment applications. The Ta-N thin-film strain-gauges are sputter-deposited onto a micromachined Si diaphragms with buried cavity for overpressure protectors. The proposed device takes advantages of the good mechanical properties of single-crystalline Si as diaphragms fabricated by SDB and electrochemical etch-stop technology, and in order to extend the operating temperature range, it incorporates relatively the high resistance, stability and gauge factor of Ta-N thin-films. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is $1.097-1.21\;mV/V{\codt}kgf/cm^2$ in the temperature range of $25-200^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.2
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• pp.73-79
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• 2022

In this study, a reaction study between Ga, which has recently been spotlighted as a low-temperature bonding material, and Cu, a representative electrode material, was conducted to investigate information necessary for low-temperature soldering applications. Interfacial reaction and intermetallic compound (IMC) growth were observed and analyzed by reacting Ga and Cu/Au substrates in the temperature range of 80-200℃. The main IMC growing at the reaction interface was CuGa₂ phase, and AuGa₂ IMC with small particle sizes was formed on the upper part and Cu₉Ga₄ IMC with a thin band shape on the lower part of the CuGa₂ layer. CuGa₂ particles showed a scallop shape, and the particle size increased without significant shape change as the reaction time increased, similar to the case of Cu₆Sn₅ growth. As a result of analyzing the CuGa₂ growth mechanism, the time exponent was calculated to be ~3.0 in the temperature range of 120-200℃, and the activation energy was measured to be 17.7 kJ/mol.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.15 no.12
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• pp.7283-7286
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• 2014

SiOC films were prepared as insulators for displays by sputtering at low temperatures, and the relationship with the electrical properties waaas examined. The electrical properties of SiOC films were affected by the annealing process, and SiOC films annealed at 100oC showed a significant increase in thickness and a decrease in the reflective index. XRD revealed an increase in the degree of the amorphous structure. Moreover, the capacitance and leakage current of the SiOC films annealed at 100oC decreased. These characteristics of SiOC films highlight their potential as ideal insulators. Amorphous SiOC films by the reduction of polarization are dependent on the elongation effect of the bonding lengths in the structure and the thickness. The properties of these SiOC films are suitable for low temperature displays.

• Proceedings of the KWS Conference
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• 2009.11a
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• pp.73-73
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• 2009

In this sutdy, a new class ACA(Anisotropic Conductive Adhesive) with low-melting-point alloy(LMPA) and self-organized interconnection method were developed. This developed self-organized interconnection method are achieved by the flow, melting, coalescence and wetting characteristics of the LMPA fillers in ACA. In order to observe self-interconnection characteristic, the QFP($14{\times}14{\times}2.7mm$ size and 1mm lead pitch) was used. Thermal characteristic of the ACA and temperature-dependant viscosity characteristics of the polymer were observed by differential scanning calorimetry(DSC) and torsional parallel rheometer, respectively. A electrical and mechanical characteristics of QFP bonding were measured using multimeter and pull tester, respectively. Wetting and coalescence characteristics of LMPA filler particles and morphology of conduction path were observed by microfocus X-ray inspection systems and cross-sectional optical microscope. As a result, the developed self-organized interconnection method has a good electrical characteristic($2.41m{\Omega}$) and bonding strength(17.19N) by metallurgical interconnection of molten solder particles in ACA.

• Elastomers and Composites
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• v.43 no.4
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• pp.259-263
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• 2008

An effect of low-temperature long-term thermal degradation on a degree of crystallinity of a low density polyethylene (LDPE) was investigated by using $^1H$ solid state nuclear magnetic resonance (SSNMR). Firstly, the long-term thermal treatment makes a color of LDPE from white to pale yellow which is indicative of thermal oxidation. Secondly, it makes the $^{1}H$ NMR spin-spin and spin-lattice relaxation times ($T_1$) to be long. Lastly, the degree of crystallinity of the semicrystalline aged-LDPE also decreases with thermal treatment. Above all, the $T_1$ increase is envisaged to be due to either a decrease of the amorphous regions governing overall spin-lattice relaxation mechanism in LDPEs or a dynamically restricted motion of specific molecular motions by intermolecular hydrogen bonding or crosslinking. However, since the decrease of crystallinity implies an increase of amorphous regions by the thermal treatment, the former case is contrast to our results. Accordingly, we concluded that the latter effect is responsible for the $T_1$ increase.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.