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http://dx.doi.org/10.5762/KAIS.2014.15.12.7283

Effects of the Bonding Structure and Thickness on the Leakage Current of Semiconductors as Insulators  

Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Korea Academia-Industrial cooperation Society / v.15, no.12, 2014 , pp. 7283-7286 More about this Journal
Abstract
SiOC films were prepared as insulators for displays by sputtering at low temperatures, and the relationship with the electrical properties waaas examined. The electrical properties of SiOC films were affected by the annealing process, and SiOC films annealed at 100oC showed a significant increase in thickness and a decrease in the reflective index. XRD revealed an increase in the degree of the amorphous structure. Moreover, the capacitance and leakage current of the SiOC films annealed at 100oC decreased. These characteristics of SiOC films highlight their potential as ideal insulators. Amorphous SiOC films by the reduction of polarization are dependent on the elongation effect of the bonding lengths in the structure and the thickness. The properties of these SiOC films are suitable for low temperature displays.
Keywords
SiOC thin film; thickness; XRD pattern; amorphous; reflectice index; leakage current;
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Times Cited By KSCI : 3  (Citation Analysis)
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