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S. Fernandez, A. Martinez-Steele, J.J. Gandia, F.B. Naranjo, "Radio frequency sputter deposition of high quality conductive and transparent ZnO:Al films on polymer substrates forthin film solar cells application," Thin Solid Films, 517, 3152-3156, 2009. DOI: http://dx.doi.org/10.1016/j.tsf.2008.11.097
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T. Oh, "Organic thin film transistors using pentacene and SiOC film," IEEE transactions on Nanotechnology, Vol. 5, 23-28, 2006. DOI: http://dx.doi.org/10.1109/TNANO.2005.858591
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Min Su Kim, Kwang Gug Yim, Gae Young Leem, Soaram Kim, Giwoong Nam, Dong Yul Lee, Jin Soo Kim and Jong Su Kim, "Thickness dependence of properties of ZnO thin films on porous silicon grown by plasma assisted molecular beam epitaxy," Journal of the Korean Physical Society, 59, 2354-2361, 2011. DOI: http://dx.doi.org/10.3938/jkps.59.2354
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Kyoungchul Shin, K. Prabakar, Wean-Pil Tai, Jae Hee Oh, Chongmu Lee, Dong Wha Park and Wha Swung Ahn, "The structural and photoluminescence properties of Al:ZnO/porous silicon," Journal of the Korean Physical Society, 45, 1288-1291. 2004.
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Tae Eun Park, Dong Chan Kim, Bo Hyun Kong and Hyung Koun Cho, "Structural and potical properties of ZnO thin films grown by RF magnetron sputtering on Si substrates," Journal of the Korean Physical Society, 45, S697-S700, 2004.
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T. Oh, and C. H. Kim, "Study on characteristic properties of annealed SiOC film prepared by inductively coupled plasma chemical vapor deposition," IEEE Trans. Plasma Science, 38, 1598-1602, 2010. DOI: http://dx.doi.org/10.1109/TPS.2010.2049665
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T. Oh and H. B. Kim, "Pentacene thin film trasnsistors on PMMA treated ", Transactions on Electrical and Electronic Materials, 7(7), 639-642, 2006.
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Teresa Oh, "Comparision between organic thin films deposited by using CCP-CVD and ICP-CVD," J. Korean Phys. Soc. 55, 1950-1954, 2009. DOI: http://dx.doi.org/10.3938/jkps.55.1950
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P. Masri, "Silicon carbide and silicon carbide- based structures: The physics of epitaxy", Surface science reports, 48, 1-20, 2002. DOI: http://dx.doi.org/10.1016/S0167-5729(02)00099-7
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Jeong, J. K. et al. Impact of device configuration on the temperature instability of Al-Zn-Sn-O thin film transistors. Appl. Phys. Lett. 95, 123505 (2009). DOI: http://dx.doi.org/10.1063/1.3236694
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E. Chong, Y. W. Jeon, Y. S. Chun, D. H. Kim and S. Y. Lee, Localization effect of a current-path in amorphous In -Ga-Zn-O thin film transistors with a highly doped buried-layer. Thin Solid Films, 519, 4347-4350 (2011). DOI: http://dx.doi.org/10.1016/j.tsf.2011.02.033
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