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http://dx.doi.org/10.4191/kcers.2015.52.6.435

Optimization of Binder Burnout for Reaction Bonded Si3N4 Substrate Fabrication by Tape Casting Method  

Park, Ji Sook (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology)
Lee, Hwa Jun (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology)
Ryu, Sung Soo (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology)
Lee, Sung Min (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology)
Hwang, Hae Jin (Department of Materials Science and Engineering, Inha University)
Han, Yoon Soo (Engineering Ceramic Team, Korea Institute of Ceramic Engineering and Technology)
Publication Information
Journal of the Korean Ceramic Society / v.52, no.6, 2015 , pp. 435-440 More about this Journal
Abstract
It is a challenge from an industrial point of view to fabricate silicon nitride substrates with high thermal conductivity and good mechanical properties for power devices from high-purity Si scrap powder by means of thick film processes such as tape casting. We characterize the residual carbon and oxygen content after the binder burnout followed by nitridation as a function of the temperature in the temperature range of $300^{\circ}C-700^{\circ}C$ and the atmosphere in a green tape sample which consists of high-purity Si powder and polymer binders such as polyvinyl butyral and dioctyl phthalate. The optimum condition of binder burnout is suggested in terms of the binder removal temperature and atmosphere. If considering nitridation, the burnout of the organic binder in air compared to that in a nitrogen atmosphere could offer an advantage when fabricating reaction-bonded $Si_3N_4$ substrates for power devices to enable low carbon and oxygen contents in green tape samples.
Keywords
Silicon nitride; Silicon; Tape casting; Reaction bonding; Thick films;
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Times Cited By KSCI : 4  (Citation Analysis)
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1 H. Huang, K. J. Winchester, A. Suvorova, B. R. Lawn, Y. Liu, X. Z. Hu, J. M. Dell, and L. Faraone, "Effect of Deposition Conditions on Mechanical Properties of Low-Temperature PECVD Silicon Nitride Films," Mater. Sci. Eng., A435-546 453-59 (2006).
2 K. Watari, "High Thermal Conductivity Non-Oxide Ceramics," J. Ceram. Soc. Jpn., 109 [1] S7-16 (2001).   DOI
3 K. Hirao, Y. Zhou, H. Hyuga, T. Ohji, and D. Kusano, "High Thermal Conductivity Silicon Nitride Ceramics," J. Korean Ceram. Soc., 49 [4] 380-84 (2012).   DOI
4 H. Miyazaki, K. Hirao, and Y. Yoshizawa, "Effects of MgO Addition on the Microwave Dielectric Properties of High Thermal-conductive Silicon Nitride Ceramics Sintered with Ytterbia as Sintering Additives," J. Eur. Ceram. Soc., 32 3297-301 (2012).   DOI
5 H. Miyazaki, K. Hirao, and Y. Yoshizawa, "Effect of Crystallization of Intergranular Glassy Phases on the Dielectric Properties of Silicon Nitride Ceramics," Mater. Sci. Eng. B, 148 257-60 (2008).   DOI
6 J. S. Lee, J. H. Mun, B. D. Han, D. S. Park, and H. D. Kim, "Effect of Raw-Si Particle Size on the Mechanical Properties of Sintered RBSN," J. Korean Ceram. Soc., 38 [8] 740-48 (2001).
7 K. H. Kwak, C. Kim, I. S. Han, and K. S. Lee, "Thermal Shock and Hot Corrosion Resistance of $Si_3N_4$ Fabricated by Nitrided Pressureless Sintering," J. Korean Ceram. Soc., 46 [5] 478-83 (2009).   DOI
8 X. Zhu, Y. Zhou, K. Hirao, T. Ishigaki, and Y. Sakka, "Potential Use of only $Yb_2O_3$ in Producing Dense $Si_3N_4$ Ceramics with High Thermal Conductivity by Gas Pressure Sintering," Sci. Technol. Adv. Mater., 11 [6] 1-11 (2010).
9 S. K. Lee, J. D. Morreti, M. J. Readey, and B. R. Lawn, "Thermal Shock Resistance of Silicon Nitrides," J. Am. Ceram. Soc., 85 [1] 279-81 (2002).   DOI
10 M. J. Choi, T. W. Roh, C. Park, D. S. Park, and H. D. Kim, "The Study of Reaction Bonded Silicon Nitride Fabricated Under Static Nitrogen Pressure," J. Korean Ceram. Soc., 37 [5] 505-10 (2000).
11 M. N. Rahaman and A. J. Moulson, "The Removal of Surface Silica and its Effect upon Silicon Nitridation Kinetics," J. Mater. Sci., 16 [8] 2319-21 (1981).   DOI
12 B. Lei, O. Babushkin, and R. Warren, "Nitridation Study of Reaction-bonded Silicon Nitride in situ by High Temperature X-Ray Diffraction," J. Eur. Ceram. Soc., 17 [9] 1113-18 (1997).   DOI
13 J. Y. Park and C. H. Kim, "The Microstructure of the Reaction - Bonded $Si_3N_4$ Formed in the Various Atmosphere," J. Korean Ceram. Soc., 23 [5] 61-6 (1986).
14 S. J. Hong, H. C. Ahn, and D. J. Kim, "Reaction Bonded $Si_3N_4$ from Si-Polysilazane Mixture," J. Korean Ceram. Soc., 47 [6] 572-77 (2010).   DOI
15 K. N. Chon and C. H. Kim, "Microstructure Study on $Si_3N_4$ Formed by Various Nitridation Condition," J. Korean Ceram. Soc., 21 [3] 253-58 (1984).
16 A. J. Moulson, "Reaction-bonded Silicon Nitride: its Formation and Properties," J. Mater. Sci., 14 1017-51 (1979).   DOI
17 Q. Zhang, X. Luo, W. Li, H. Zhuang, and D. Yan, "Tape Casting of AlN/glass Composites for LTCC Substrate," J. Mater. Sci., 38 [8] 1781-85 (2003).   DOI
18 W. S. Lee, C. H. Kim, M. S. Ha, S. J. Jeong, J. S. Song, and B. K. Ryu, "The Characterizations of Tape Casting for Low Temperature Sintered Microwave Ceramics Composite," J. Korean Ceram. Soc., 42 [2] 132-39 (2005).   DOI
19 B. T. Lee, J. H. Yoo, and H. D. Kim, "Fabrication of Silicon Nitride Ceramics Using Semiconductor-Waste-Si Sludge," Korean J. Mater. Res., 9 [12] 1170-75 (1999).
20 B. R. Golla, J. W. Ko, J. M. Kim, and H. D. Kim, "Effect of Particle Size and Oxygen Content of Si on Processing, Microstructure and Thermal Conductivity of Sintered Reaction Bonded $Si_3N_4$," J. Alloys Compd., 595 60-6 (2014).   DOI
21 W. Y. Park, D. S. Park, H. D. Kim, and B. D. Han, "Sintering and Mechanical Properties of Silicon Nitride Prepared with a Low-Cost Silicon Nitride Powder," J. Korean Ceram. Soc., 38 [11] 987-92 (2001).