• Title/Summary/Keyword: low-power dissipation

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Design of AT-DMB Baseband Receiver SoC

  • Lee, Joo-Hyun;Kim, Hyuk;Kim, Jin-Kyu;Koo, Bon-Tae;Eum, Nak-Woong;Lee, Hyuck-Jae
    • ETRI Journal
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    • v.31 no.6
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    • pp.795-802
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    • 2009
  • This paper presents the design of an advanced terrestrial digital multimedia broadcasting (AT-DMB) baseband receiver SoC. The AT-DMB baseband is incorporated into a hierarchical modulation scheme consisting of high priority (HP) and low priority (LP) stream decoders. The advantages of the hierarchical modulation scheme are backward compatibility and an enhanced data rate. The structure of the HP stream is the same as that of the conventional T-DMB system; therefore, a conventional T-DMB service is possible by decoding multimedia data in an HP stream. An enhanced data rate can be achieved by using both HP and LP streams. In this paper, we also discuss a time deinterleaver that can deinterleave data for a time duration of 384 ms or 768 ms. The interleaving time duration is chosen using the LP symbol mapping scheme. Furthermore, instead of a Viterbi decoder, a turbo decoder is adopted as an inner error correction system to mitigate the performance degradation due to a smaller symbol distance in a hierarchically modulated LP symbol. The AT-DMB baseband receiver SoC is fabricated using 0.13 ${\mu}m$ technology and shows successful operation with a 50 mW power dissipation.

A 155 Mb/s BiCMOS Multiplexer-Demultiplexer IC (155 Mb/s BiCMOS 멀티플렉서-디멀티플렉서 소자)

  • Lee, Sang-Hoon;Kim, Seong-Jeen
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.1A
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    • pp.47-53
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    • 2003
  • This paper describes the design of a 155 Mb/s multiplexer-demultiplexer chip. This device for a 2.5 Gb/s SDH based transmission system is to interleave the parallel data of 51 Mb/s into 155 Mb/s serial data output, and is to deinterleave a serial input bit stream of 155 Mb/s into the parallel output of 51 Mb/s The input and output of the device are TTL compatible at the low-speed end, but 100K ECL compatible at the high-speed end The device has been fabricated with a 0.7${\mu}m$ BiCMOS gate array The fabricated chip shows the typical phase margin of 180 degrees and output data skew less than 470 ps at the high-speed end. And power dissipation is evaluated under 2.0W.

Electrical Behaviors of ZnO Elements under Combined Direct and Alternating Voltages

  • Yang, Soon-Man;Lee, Bok-Hee;Paek, Seung-Kwon
    • Journal of Electrical Engineering and Technology
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    • v.4 no.1
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    • pp.111-117
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    • 2009
  • This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.

A 1.5 V High-Cain High-Frequency CMOS Complementary Operational Amplifier

  • Park, Kwangmin
    • Transactions on Electrical and Electronic Materials
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    • v.2 no.4
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    • pp.1-6
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    • 2001
  • In this paper, a 1.5 V high-gain high-frequency CMOS complementary operational amplifier is presented. The input stage of op-amp is designed for supporting the constant transconductance on the Input stage by consisting of the parallel-connected rail-to-rail complementary differential pairs. And consisting of the class-AB rail-to-rail output stage using the concept of elementary shunt stage and the grounded-gate cascode compensation technique for improving the low PSRR which was a disadvantage in the general CMOS complementary input stage, the load dependence of open loop gain and the stability of op- amp on the output load are improved, and the high-gain high-frequency operation can be achieved. The designed op-amp operates perfectly on the complementary mode with the 180° phase conversion for a 1.5 V supply voltage, and shows the DC open loop gain of 84 dB, the phase margin of 65°, and the unity gain frequency of 20 MHz. In addition, the amplifier shows the 0.1 % settling time of .179 ㎲ for the positive step and 0.154 ㎲ for the negative step on the 100 mV small-signal step, respectively, and shows the total power dissipation of 8.93 mW.

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A 16-channel CMOS Inverter Transimpedance Amplifier Array for 3-D Image Processing of Unmanned Vehicles (무인차량용 3차원 영상처리를 위한 16-채널 CMOS 인버터 트랜스임피던스 증폭기 어레이)

  • Park, Sung Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.12
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    • pp.1730-1736
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    • 2015
  • This paper presents a 16-channel transimpedance amplifier (TIA) array implemented in a standard $0.18-{\mu}m$ CMOS technology for the applications of panoramic scan LADAR (PSL) systems. Since this array is the front-end circuits of the PSL systems to recover three dimensional image for unmanned vehicles, low-noise and high-gain characteristics are necessary. Thus, we propose a voltage-mode inverter TIA (I-TIA) array in this paper, of which measured results demonstrate that each channel of the array achieves $82-dB{\Omega}$ transimpedance gain, 565-MHz bandwidth for 0.5-pF photodiode capacitance, 6.7-pA/sqrt(Hz) noise current spectral density, and 33.8-mW power dissipation from a single 1.8-V supply. The measured eye-diagrams of the array confirm wide and clear eye-openings up to 1.3-Gb/s operations. Also, the optical pulse measurements estimate that the proposed 16-channel TIA array chip can detect signals within 20 meters away from the laser source. The whole chip occupies the area of $5.0{\times}1.1mm^2$ including I/O pads. For comparison, a current-mode 16-channel TIA array is also realized in the same $0.18-{\mu}m$ CMOS technology, which exploits regulated-cascode (RGC) input configuration. Measurements reveal that the I-TIA array achieves superior performance in optical pulse measurements.

Design of 6-bit 800 Msample/s DSDA A/D Converter for HDD Read Channel (HDD 읽기 채널용 6-bit 800 Msample/s DSDA 아날로그/디지털 변환기의 설계)

  • Jeong, Dae-Yeong;Jeong, Gang-Min
    • The KIPS Transactions:PartA
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    • v.9A no.1
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    • pp.93-98
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    • 2002
  • This paper introduces the design of high-speed analog-to-digital converter (ADC) for hard disk drive (HDD) read channel applications. This circuit is bated on fast regenerative autozero comparator for high speed and low-error rate comparison operation, and Double Speed Dual ADC (DSDA) architecture for efficiently increasing the overall conversion speed of ADC. A new type of thermometer-to-binary decoder appropriate for the autozero architecture is employed for no glitch decoding, simplifying the conventional structure significantly. This ADC is designed for 6-bit resolution, 800 Msample/s maximum conversion rate, 390 mW power dissipation, one clock cycle latency in 0.65 m CMOS technology.

Performance evaluation and hysteretic modeling of low rise reinforced concrete shear walls

  • Nagender, T.;Parulekar, Y.M.;Rao, G. Appa
    • Earthquakes and Structures
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    • v.16 no.1
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    • pp.41-54
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    • 2019
  • Reinforced Concrete (RC) shear walls are widely used in Nuclear power plants as effective lateral force resisting elements of the structure and these may experience nonlinear behavior for higher earthquake demand. Short shear walls of aspect ratio less than 1.5 generally experience combined shear flexure interaction. This paper presents the results of the displacement-controlled experiments performed on six RC short shear walls with varying aspect ratios (1, 1.25 and 1.5) for monotonic and reversed quasi-static cyclic loading. Simulation of the shear walls is then carried out by Finite element modeling and also by macro modeling considering the coupled shear and flexure behaviour. The shear response is estimated by softened truss theory using the concrete model given by Vecchio and Collins (1994) with a modification in softening part of the model and flexure response is estimated using moment curvature relationship. The accuracy of modeling is validated by comparing the simulated response with experimental one. Moreover, based on the experimental work a multi-linear hysteretic model is proposed for short shear walls. Finally ultimate load, drift, ductility, stiffness reduction and failure pattern of the shear walls are studied in details and hysteretic energy dissipation along with damage index are evaluated.

A Study on the Thermo-Flow Analysis of Air Conditioning Electric Compressor Motor System for Hybrid Electric Vehicles (하이브리드 자동차 에어컨용 전동식 압축기 모터 시스템의 열유동 해석 연구)

  • Kim, Sung Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.14 no.2
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    • pp.592-597
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    • 2013
  • The heat generated at the motor and inverter inside the electric compressor of inverter built-in type is mainly cooled by refrigerant and generally, there is not a thermal problem. However, the close relation of heat transfer from the motor and inverter parts to the compression part affects on compressor efficiency. Also, according to the surrounding environment and system operation condition, the increased temperature of the motor and inverter can affect the power density of the motor system, and especially, the inverter may be prevented to operate by the temperature limits. In this study, we performed thermo-flow analysis of electric compressor motor system, and investigated the heat dissipation enhancement of the motor and inverter. The motor part in the operation region of the electric compressor was generally maintained at low temperature and the inverter part at high compressor speed was lower temperature than the temperature limit of $85^{\circ}C$. However, the case of the inverter at low speed harsh condition was in excess of $10^{\circ}C$. Therefore, in order to solve the thermal problem, the heat reduction technology of the motor and inverter is essential as well as the improvement of flow path in the compressor.

A 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS ADC for Digital Multimedia Broadcasting applications (DMB 응용을 위한 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D 변환기)

  • Cho, Young-Jae;Kim, Yong-Woo;Lee, Seung-Hoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.11 s.353
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    • pp.37-47
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    • 2006
  • This work proposes a 10b 25MS/s $0.8mm^2$ 4.8mW 0.13um CMOS A/D Converter (ADC) for high-performance wireless communication systems such as DVB, DAB and DMB simultaneously requiring low voltage, low power, and small area. A two-stage pipeline architecture minimizes the overall chip area and power dissipation of the proposed ADC at the target resolution and sampling rate while switched-bias power reduction techniques reduce the power consumption of analog amplifiers. A low-power sample-and-hold amplifier maintains 10b resolution for input frequencies up to 60MHz based on a single-stage amplifier and nominal CMOS sampling switches using low threshold-voltage transistors. A signal insensitive 3-D fully symmetric layout reduces the capacitor and device mismatch of a multiplying D/A converter while low-noise reference currents and voltages are implemented on chip with optional off-chip voltage references. The employed down-sampling clock signal selects the sampling rate of 25MS/s or 10MS/s with a reduced power depending on applications. The prototype ADC in a 0.13um 1P8M CMOS technology demonstrates the measured DNL and INL within 0.42LSB and 0.91LSB and shows a maximum SNDR and SFDR of 56dB and 65dB at all sampling frequencies up to 2SMS/s, respectively. The ADC with an active die area if $0.8mm^2$ consumes 4.8mW at 25MS/s and 2.4mW at 10MS/s at a 1.2V supply.

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

  • Bhuiyan, Mohammad Arif Sobhan;Reaz, Mamun Bin Ibne;Badal, Md. Torikul Islam;Mukit, Md. Abdul;Kamal, Noorfazila
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.5
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    • pp.261-269
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    • 2016
  • A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from - 25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm2 that is the lowest-ever reported chip area for this frequency band was achieved.