• Title/Summary/Keyword: low-power dissipation

Search Result 339, Processing Time 0.027 seconds

A Study on Power Dissipation of The Microprocessor Based on Trace-Driven Simulation (명령어 자취형 모의실험을 기반으로 하는 마이크로프로세서의 전력 소비에 대한 연구)

  • Lee, Jongbok
    • The Journal of the Institute of Internet, Broadcasting and Communication
    • /
    • v.16 no.5
    • /
    • pp.191-196
    • /
    • 2016
  • Recently, power dissipation is a very significant issue not only in embedded systems and mobile devices but also in high-end modern processors. Especially, by the prevalent use of smart phones and tablet PCs, low power consumption of microprocessors is requisite. In this paper, a fast power measurement tool for a high performance microprocessor based on the trace-driven simulator has been developed. The power model of the microprocessor consists of complex combinational circuits, array structures, and CAM structures. Using SPEC 2000 benchmarks as input, the trace-driven simulation has been performed to estimate the average power dissipation of each program.

A Kernel-Based Partitioning Algorithm for Low-Power, Low-Area Overhead Circuit Design Using Don't-Care Sets

  • Choi, Ick-Sung;Kim, Hyoung;Lim, Shin-Il;Hwang, Sun-Young;Lee, Bhum-Cheol;Kim, Bong-Tae
    • ETRI Journal
    • /
    • v.24 no.6
    • /
    • pp.473-476
    • /
    • 2002
  • This letter proposes an efficient kernel-based partitioning algorithm for reducing area and power dissipation in combinational circuit designs using don't-care sets. The proposed algorithm decreases power dissipation by partitioning a given circuit using a kernel extracted from the logic. The proposed algorithm also reduces the area overhead by minimizing duplicated gates in the partitioned sub-circuits. The partitioned subcircuits are further optimized utilizing observability don't-care sets. Experimental results for the MCNC benchmarks show that the proposed algorithm synthesizes circuits that on the average consume 22.5% less power and have 12.7% less area than circuits generated by previous algorithms based on a precomputation scheme.

  • PDF

Design of a Low-Power MOS Monolithic Peak Detector (저전력 MOS 모놀리식 피크 감지기의 설계)

  • 박광민;백경호
    • Proceedings of the IEEK Conference
    • /
    • 2000.06b
    • /
    • pp.217-220
    • /
    • 2000
  • In this paper, A low-power MOS monolithic peak detector is presented. Designed for monolithic and low-power characteristics, this MOS peak detector can be integrated easily on the same chip as a module of large communication systems. The simulation results of this peak detector which was composed with four NMOSs and two capacitors show the power dissipation of 0.972㎽ and the good operations for 2㎓ operating pulse frequency. Therefore, it may be used as a functional block for various signal processing systems.

  • PDF

Effects of Fast Neutron Irradiation on Switching of Silicon Bipolar Junction Transistor

  • Sung Ho Ahn;Gwang Min Sun
    • Journal of Radiation Protection and Research
    • /
    • v.48 no.3
    • /
    • pp.124-130
    • /
    • 2023
  • Background: When bipolar junction transistors (BJTs) are used as switches, their switching characteristics can be deteriorated because the recombination time of the minority carriers is long during turn-off transient. When BJTs operate as low frequency switches, the power dissipation in the on-state is large. However, when BJTs operate as high frequency switches, the power dissipation during switching transients increases rapidly. Materials and Methods: When silicon (Si) BJTs are irradiated by fast neutrons, defects occur in the Si bulk, shortening the lifetime of the minority carriers. Fast neutron irradiation mainly creates displacement damage in the Si bulk rather than a total ionization dose effect. Defects caused by fast neutron irradiation shorten the lifetime of minority carriers of BJTs. Furthermore, these defects change the switching characteristics of BJTs. Results and Discussion: In this study, experimental results on the switching characteristics of a pnp Si BJT before and after fast neutron irradiation are presented. The results show that the switching characteristics are improved by fast neutron irradiation, but power dissipation in the on-state is large when the fast neutrons are irradiated excessively. Conclusion: The switching characteristics of a pnp Si BJT were improved by fast neutron irradiation.

A Study of Low-Voltage Low-Power Linear Transconductor (저전압 저전력 선형 트랜스컨덕터에 관한 연구)

  • 김동용;신희종;차형우;정원섭
    • Proceedings of the IEEK Conference
    • /
    • 1999.11a
    • /
    • pp.967-970
    • /
    • 1999
  • A novel linear transconductor for low-voltage low-power signal processing is proposed. The transconductor consists of a pnp differential-pair and a npn differential-pair which are biased by local negative feedback. The simulation results show that the transcondcutor with transconductance of 50 $mutextrm{s}$ has a linearity error of 0.05% and the power dissipation is 2.44 ㎽ over an input linear range from -2V to +2V at supply voltage $\pm$3V.

  • PDF

Film Thickness Dependence of Ac High Field for Low Density Polyethylene (저밀도 폴리에틸렌의 고전계 파형에 대한 필름 두께 의존성)

  • Choi, Yong-Sung;Wee, Sung-Dong;Hwang, Jong-Sun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2008.04c
    • /
    • pp.45-49
    • /
    • 2008
  • Polyethylene is widely used as the insulator for power cable. To investigate the conduction mechanism for power cable insulation under ac high field, it is very important to acquire the dissipation current under actual running field. Recently, we have developed the unique system, which make possible to observe the nonlinear dissipation current waveform. In this system, to observe the nonlinear properties with high accuracy, capacitive current component is canceled by using inverse capacitive current signal instead of using the bridge circuit for canceling it. We have already reported that the dissipation currents of $40\;{\mu}m$ thick LDPE film at 10 kV/mm and over 140 Hz, it starts to show nonlinearity and odd number's harmonics were getting large. To investigate the conduction mechanis ms in this region, especially space charge effect, various kinds of estimation, such as time variations of instantaneous resistivity for one cycle, FFT spectra of dissipation current waveforms and so on, has been examined. As the results of these estimations, it was found that the dissipation current will depend on not only the instantaneous value of electric field but also the time differential of applied electric field due to taking a balance between applied field and internal field. Furthermore, two large peaks of dissipation current for each half cycle were observed under certain condition. In this paper, to clarify the reason why it shows two peaks for each half cycle, the film thickness dependences of dissipation current waveforms were observed by using the three different thickness LDPE films.

  • PDF

Bus Splitting Techniques for Low Power SoC Design (저 전력 시스템 온 칩 설계를 위한 버스 분할 기술)

  • Lim Hoyeong;Yoon Misun;Shin Hyunchul;Park Sungju
    • Journal of KIISE:Computer Systems and Theory
    • /
    • v.32 no.6
    • /
    • pp.324-332
    • /
    • 2005
  • In general, bus system consumes a very significant portion of power in a chip. Bus splitting can be used to reduce the energy dissipation and to reduce the Propagation delay on the bus by lowering the parasitic load of each bus segment. Data exchange probability distribution between a set of interconnected processing elements affects the average energy dissipation of the splitted bus architectures. In this research, we have developed tree-based bus splitting techniques and design methodologies, as an extension of horizontally aligned bus splitting. We have developed the methodology to select near-optimal bus architectures for low energy dissipation when data exchange probability distribution of a system is given. Experimental results show that the proposed techniques can reduce energy dissipation on the bus by up to 83$\%$.

Semiconductor Characteristics and Design Methodology in Digital Front-End Design (Digital Front-End Design에서의 반도체 특성 연구 및 방법론의 고찰)

  • Jeong, Taik-Kyeong;Lee, Jang-Ho
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.10 no.10
    • /
    • pp.1804-1809
    • /
    • 2006
  • The aim of this Paper is to describe the implementation of a low-power digital front-End Design (FED) that will act as the core of a stand-alone Power dissipation methodology. The design of digital integrated circuits is a large and diverse area, and we have chosen to focus on low power FED. Designs are made from synthesized logic, and we need to consider the low power digital FED including input clock, buffer, latches, voltage regulator, and capacitance-to-voltage counter which have been integrated onto hish bandwidth communication chips and system. These single- chip micro instruments, implemented in a 0.12um CMOS technology operate with a single 0.9V supply voltage, and can be used to monitor dynamic and static power dissipation, Vesture, acceleration junction temperature (Tj), etc.

An Efficient Data Transmission Strategy using Adaptive-Tier Low Transmission Power Schedule in a Steady-state of BMA (적응형 저전력 전송 기법을 사용한 효율적인 BMA 데이터 전송 기술)

  • Kim, Sang-Chul
    • Journal of the Korea Society of Computer and Information
    • /
    • v.15 no.5
    • /
    • pp.103-111
    • /
    • 2010
  • This paper proposes an efficient data transmission strategy using adaptive-tier low transmission power schedule in a TDMA-based ad hoc MAC protocol. Since the network resource of ad hoc networks has the characteristic of reassignment due to the multiple interferences and the contention-based limited wireless channel, the efficient time slot assignment and low power transmission scheme are the main research topics in developing ad hoc algorithms. Based on the proposed scheme of interference avoidance when neighbor clusters transmit packets, this paper can minimize the total energy dissipation and maximize the utilization of time slot in each ad hoc node. Simulation demonstrates that the proposed algorithm yields 15.8 % lower energy dissipation and 4.66% higher time slot utilization compared to the ones of two-tier conventional energy dissipation model.

High performance and low power sense amplifier design for SONOS flash memory (SONOS 플래시 메모리용 저전력 고성능 Sense amplifier 설계)

  • Jung Jin-Gyo;Jung Young-Wook;Jung Xong-Ho;Kwack Kae-Dal
    • Proceedings of the IEEK Conference
    • /
    • 2004.06b
    • /
    • pp.469-472
    • /
    • 2004
  • In this paper a current mode sense amplifier suitable for 30nm SONOS flash memories read operation is presented. The proposed sense amplifier employs cross coupled latch type circuit and current mirror to amplify signal from selected memory cell. This sense amplifier provides fast response in low voltage and low current dissipation. Simulation results show the sensing delay time and current dissipation for power supply voltages Vdd to expose limitations of the sense amplifier in various operating conditions.

  • PDF