High performance and low power sense amplifier design for SONOS flash memory

SONOS 플래시 메모리용 저전력 고성능 Sense amplifier 설계

  • Jung Jin-Gyo (Division of Electrical and Computer Engineering. Hanyang University) ;
  • Jung Young-Wook (Division of Electrical and Computer Engineering. Hanyang University) ;
  • Jung Xong-Ho (Division of Electrical and Computer Engineering. Hanyang University) ;
  • Kwack Kae-Dal (Division of Electrical and Computer Engineering. Hanyang University)
  • 정진교 (한양대학교 전자전기컴퓨터공학부) ;
  • 정영욱 (한양대학교 전자전기컴퓨터공학부) ;
  • 정종호 (한양대학교 전자전기컴퓨터공학부) ;
  • 곽계달 (한양대학교 전자전기컴퓨터공학부)
  • Published : 2004.06.01

Abstract

In this paper a current mode sense amplifier suitable for 30nm SONOS flash memories read operation is presented. The proposed sense amplifier employs cross coupled latch type circuit and current mirror to amplify signal from selected memory cell. This sense amplifier provides fast response in low voltage and low current dissipation. Simulation results show the sensing delay time and current dissipation for power supply voltages Vdd to expose limitations of the sense amplifier in various operating conditions.

Keywords