• Title/Summary/Keyword: low-power and low-voltage circuit

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A Study on the Low Voltage Detection Circuit (저전압 감지회로에 관한 연구)

  • Kim, Phil-Jung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.11
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    • pp.676-680
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    • 2016
  • This paper describes a low voltage detection circuit used in the semiconductor chips. The circuit was composed of a detection part of the CMOS structure as three stages and two inverters. The output of the low voltage detection circuit become to 'high' from 'low', when the power supply voltage falls below 80%. When the power supply voltage is 5 V, it was detected at 4 V point. The proposed low voltage detection circuit can be easily applied only by changing the resister and the capacitor without structural change in a wide range of power supply voltage.

1.5 V Sub-mW CMOS Interface Circuit for Capacitive Sensor Applications in Ubiquitous Sensor Networks

  • Lee, Sung-Sik;Lee, Ah-Ra;Je, Chang-Han;Lee, Myung-Lae;Hwang, Gunn;Choi, Chang-Auck
    • ETRI Journal
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    • v.30 no.5
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    • pp.644-652
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    • 2008
  • In this paper, a low-power CMOS interface circuit is designed and demonstrated for capacitive sensor applications, which is implemented using a standard 0.35-${\mu}m$ CMOS logic technology. To achieve low-power performance, the low-voltage capacitance-to-pulse-width converter based on a self-reset operation at a supply voltage of 1.5 V is designed and incorporated into a new interface circuit. Moreover, the external pulse signal for the reset operation is made unnecessary by the employment of the self-reset operation. At a low supply voltage of 1.5 V, the new circuit requires a total power consumption of 0.47 mW with ultra-low power dissipation of 157 ${\mu}W$ of the interface-circuit core. These results demonstrate that the new interface circuit with self-reset operation successfully reduces power consumption. In addition, a prototype wireless sensor-module with the proposed circuit is successfully implemented for practical applications. Consequently, the new CMOS interface circuit can be used for the sensor applications in ubiquitous sensor networks, where low-power performance is essential.

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A study on the Design of a stable Substrate Bias Generator for Low power DRAM's (DRAM 의 저전력 구현을 위한 안정한 기판전압 발생기 설계에 관한 연구)

  • 곽승욱;성양현곽계달
    • Proceedings of the IEEK Conference
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    • 1998.10a
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    • pp.703-706
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    • 1998
  • This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

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New High Efficiency Zero-Voltage-Switching AC-DC Boost Converter Using Coupled Inductor and Energy Recovery Circuit (결합 인덕터 및 에너지 회생 회로를 사용한 새로운 고 효율 ZVS AC-DC 승압 컨버터)

  • Park, Gyeong-Su;Kim, Yun-Ho
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.10
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    • pp.501-507
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    • 2001
  • In this paper, new high-efficiency zero voltage switching (ZVS) AC-DC boost converter is proposed to achieve power factor correction by simplifing energy recovery circuit. A lot of high power factor correction circuits have been proposed and applied to increase input power factor and efficiency. Most of these circuits may obtain unity power factor and achieve sinusoidal current waveform with zero voltage or/and zero current switching. However, it is difficult for them to obtain low cost, small size, low weight, and low noise. The topology proposed to improve these problems can compact the devices in circuit and can achieve high efficiency ZVS AC-DC boost converter. Simulation and experimental results show that this topology is capable of obtaining high power factor and increasing the efficiency of the system.

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Standby Power Reduction Technique due to the Minimization of voltage difference between input and output in AC 60Hz (대기전력 최소화를 위한 교류전압 입력에 따른 저전압 구동회로 설계)

  • Seo, Kil-Soo;Kim, Ki-Hyun;Kim, Hyung-Woo;Lee, Kyung-Ho;Kim, Jong-Hyun
    • Proceedings of the KIEE Conference
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    • 2015.07a
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    • pp.1018-1019
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    • 2015
  • Recently, standby power reduction techniques of AC/DC adaptor were developed, consuming power almost arrived to 300mW level. The standby power losses are composed of the input filter loss 11.8mW, the control IC for AC/DC adaptor 18mW, the switching loss 9.53mW and the feedback loss 123mW. And there are the standby power reduction techniques. In this paper, in order to reduce the standby power of SMPS more, the loss due to a voltage difference between input and output is reduced by the control circuit which is composed of the low voltage driving circuit and voltage regulator. The low voltage driving circuit operates on the low voltage of input and off the high voltage. The low voltage driving IC was produced by the $1.0{\mu}m$, high voltage DMOS process.

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ULTRA LOW-POWER AND HIGH dB-LINEAR CMOS EXPONENTIAL VOLTAGE-MODE CIRCUIT

  • Duong Quoc-Hoang;Lee Sang-Gug
    • Proceedings of the IEEK Conference
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    • summer
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    • pp.221-224
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    • 2004
  • This paper proposed an ultra low-power CMOS exponential voltage-mode circuit using the Pseudo-exponential function for realizing the exponential characteristics. The proposed circuit provides high dB-linear output voltage range at low-voltage applications. In a $0.25\;\mu m$ CMOS process, the simulations show more than 35 dB output voltage range and 26 dB with the linearity error less than $\pm0.5\;dB.$ The average current consumption is less than 80 uA. The proposed circuit can be used for the design of an extremely low-power variable gain amplifier (VGA) and automatic gain control (AGC).

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Design and Implementation of Low-Voltage and Lour-Power Driving Method for Plasma Display Panel (저 전압, 저 전력 Plasma Display Panel 구동 회로의 설계 및 구현)

  • Kim, Sang-Bong;Choi, Jin-Ho;Jang, Yun-Sepk
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.601-604
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    • 2004
  • In this paper, we propose a driving circuit that can be operated with a lower voltage than that of the conventional circuit without reducing the discharge voltage. the circuit proposed in this paper has a merit to improve the electrical characteristics because it can be composed of switching devices with low voltage. The operation and efficiency using real devices. The features of the circuit proposed in this paper are as follows; the power loss can be decreased by the use of low voltage, the cost if the driving circuit for PDP can be reduced by the use of switching devices operated with low voltage.

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LNA Design Uses Active and Passive Biasing Circuit to Achieve Simultaneous Low Input VSWR and Low Noise (낮은 입력 정재파비와 잡음을 갖는 수동 및 능동 바이어스를 사용한 저잡음증폭기에 관한 연구)

  • Jeon, Joong-Sung
    • Journal of Advanced Marine Engineering and Technology
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    • v.32 no.8
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    • pp.1263-1268
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    • 2008
  • In this paper, the low noise power amplifier for GaAs FET ATF-10136 is designed and fabricated with active bias circuit and self bias circuit. To supply most suitable voltage and current, active bias circuit is designed. Active biasing offers the advantage that variations in the pinch-off voltage($V_p$) and saturated drain current($I_{DSS}$) will not necessitate a change in either the source or drain resistor value for a given bias condition. The active bias network automatically sets a gate-source voltage($V_{gs}$) for the desired drain voltage and drain current. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA, suitable for input stage matching and gate source bias. The LNA is fabricated on FR-4 substrate with active and self bias circuit, and integrated in aluminum housing. As a results, the characteristics of the active and self bias circuit LNA implemented more than 13 dB and 14 dB in gain, lower than 1 dB and 1.1 dB in noise figure, 1.7 and 1.8 input VSWR at normalized frequency $1.4{\sim}1.6$, respectively.

A Novel Low Voltage Reference Circuit for Low Power OLED Driver ICs (저 소비전력 OLED 구동 IC 응용을 위한 새로운 구조의 Low Voltage Reference 회로 설계에 관한 연구)

  • 김재헌;신홍재;이재선;최성욱;곽계달
    • Proceedings of the IEEK Conference
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    • 2003.07b
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    • pp.923-926
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    • 2003
  • This paper presents a novel low voltage reference circuit under the MOS threshold voltage(V$_{th}$) in standard CMOS process. It is based on the weighted difference of the gate-source voltages of an NMOS and a PMOS operating in saturation region. The voltage reference is designed for low power OLED driver ICs. The proposed circuit is designed using 0.35${\mu}{\textrm}{m}$ CMOS technology. The minimum supply voltage is 2V, and the typical temperature coefficient is 99.6ppm/ C.C.

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Design and Implementation of a Readout Circuit for a Tactile Sensor Pad Based on Force Sensing Resistors (FSR로 구성된 촉각 센서 패드용 Readout 회로의 설계 및 구현)

  • Yoon, Seon-ho;Baek, Seung-hee;Kim, Cheong-worl
    • Journal of Sensor Science and Technology
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    • v.26 no.5
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    • pp.331-337
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    • 2017
  • A readout circuit for a tactile sensor pad based on force sensing resistors was proposed, which was composed of an analog signal conditioning circuit and a digital circuit with a microcontroller. The conventional signal conditioning circuit has a dc offset voltage in the output signal, which results from the reference voltage applied to the FSR devices. The offset voltage reduces the dynamic range of the circuit and makes it difficult to operate the circuit under a low voltage power supply. In the proposed signal conditioning circuit, the dc offset voltage was removed completely. The microcontroller with A/D converter and D/A converter was used to enlarge the measurement range of pressure. For this, the microcontroller adjusts the FSR reference voltage according to the resistance magnitude of FSR under pressure. The operation of the proposed readout circuit which was connected to a tactile sensor pad with $5{\times}10$ FSR array was verified experimentally. The experimental results show the proposed readout circuit has the wider measurement range of pressure than the conventional circuit. The proposed circuit is suitable for low voltage and low power applications.