• Title/Summary/Keyword: low tin

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Fabrication of Ordered or Disordered Macroporous Structures with Various Ceramic Materials from Metal Oxide Nanoparticles or Precursors

  • Cho, Young-Sang;Moon, Jun-Hyuk;Kim, Young-Kuk;Choi, Chul-Jin
    • Journal of Powder Materials
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    • v.18 no.4
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    • pp.347-358
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    • 2011
  • Two different schemes were adopted to fabricate ordered macroporous structures with face centered cubic lattice of air spheres. Monodisperse polymeric latex suspension, which was synthesized by emulsifier-free emulsion polymerization, was mixed with metal oxide ceramic nanoparticles, followed by evaporation-induced self-assembly of the mixed hetero-colloidal particles. After calcination, inverse opal was generated during burning out the organic nanospheres. Inverse opals made of silica or iron oxide were fabricated according to this procedure. Other approach, which utilizes ceramic precursors instead of nanoparticles was adopted successfully to prepare ordered macroporous structure of titania with skeleton structures as well as lithium niobate inverted structures. Similarly, two different schemes were utilized to obtain disordered macroporous structures with random arrays of macropores. Disordered macroporous structure made of indium tin oxide (ITO) was obtained by fabricating colloidal glass of polystyrene microspheres with low monodispersity and subsequent infiltration of the ITO nanoparticles followed by heat treatment at high temperature for burning out the organic microspheres. Similar random structure of titania was also fabricated by mixing polystyrene building block particles with titania nanoparticles having large particle size followed by the calcinations of the samples.

Fabrication and Characterizations of ITO Film as a Transparent Conducting Electrode for PDP Application (PDP 투명전극의 응용을 위한 ITO 박막의 제작평가)

  • Park, Kang-Il;Lim, Dong-Gun;Kwak, Dong-Joo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.07b
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    • pp.788-791
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    • 2002
  • Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.

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Characterization of a Crystallized ZnO/CuSn/ZnO Multilayer Film Deposited with Low Temperature Magnetron Sputtering

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.5
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    • pp.169-172
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    • 2009
  • The ZnO/CuSn/ZnO (ZCSZ) multilayer films were deposited on polycarbonate substrates using reactive RF and DC magnetron sputtering. The thickness of each layer was 50 nm/5 nm/45 nm, respectively. The ZCSZ films showed a sheet resistance of $44{\Omega}$/Sq, which was an order of magnitude lower than that indium tin oxide (ITO) films. Although the ZCSZ films had a CuSn interlayer that absorbed visible light, both films had similar optical transmittances of 74% in the visible wavelength region. The figure of merit of the ZCSZ films was $1.0{\times}10^{-3}{\Omega}^{-1}$ and was greater than the value of the ITO films, $1.6{\times}10^{-4}{\Omega}^{-1}$. From the X-ray diffraction (XRD) analysis, the ITO films did not show any diffraction peaks, whereas the ZCSZ films showed diffraction peaks for the ZnO (100) and (002) phases. The hardness of the ITO and ZCSZ films were 5.8 and 7.1 GPa, respectively, which were determined using nano-indentation. From these results, the ZCSZ films exhibited greater optoelectrical performance and hardness compared to the conventional ITO films.

Recovery of Indium from Secondary Resources by Hydrometallurgical Method (2차(次) 자원(資源)으로부터 습식방법(濕式方法)에 의한 인듐의 회수(回收))

  • Wang, Lingyun;Lee, Manseung
    • Resources Recycling
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    • v.22 no.2
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    • pp.3-10
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    • 2013
  • Indium is one of the rare metals, and it has been used mainly for preparation of indium tin oxide (ITO). This review investigated the process parameters and the merits and demerits of several methods to recover indium from the leaching solution of secondary resources, such as solvent extraction, ion exchange, and precipitation. D2EHPA has been used mostly as a cationic extractant for indium extraction in moderate acid solutions, while amine extractants are used in strong hydrochloric acid solution. Since the loading capacity of resins for indium is generally small, ion exchange has some advantage over solvent extraction only when the concentration of indium is low.

Study on Resistivity Characteristics of Plastic ITO Film with the Multibarrier Film by the Bending Process

  • Park, Jun-Back;Lee, Yun-Gun;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Park, Sung-Kyu;Moon, Dae-Gyu;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.493-496
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    • 2003
  • Transmittance and resistivity is investigated according to bending of ITO (indium tin oxide)film with four other multi-barrier film. Transmission data of ITO film with four ITO films showed there was about large 90% transmission above 550 nm wavelength at three multi-barrier structures. But, both -side hard coated structure showed relatively low 75% transmission above 550 nm wavelength. Also, resistivity change of four other multi-barrier film showed there was the lowest change at oneside hard coated structure. Subsequently, with result of resistivity change according to position, it was known the resistivity change of the center increased rapidly than that of the edge.

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Low Temperature Deposition and Characteristics of ATO Thin Films by Ion Beam Sputtering (이온빔 스퍼터링법에 의한 ATO박막의 저온 증착 특성)

  • Koo, Chang-Young;Lee, Hee-Young;Hong, Min-Ki;Kim, Kyung-Joong;Kim, Kwang-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.05b
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    • pp.307-310
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    • 2000
  • Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

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Optimization of Electrical/Optical Properties of ITO/Al Based Reflector for Vertical-type UV LEDs via SF6 Plasma Treatments (불소계열 플라즈마 처리를 통한 수직형 UV LED용 ITO/Al 기반 반사전극의 전기적/광학적 특성 최적화)

  • Shin, Ki-Seob;Kim, Dong-Yoon;Kim, Tae-Geun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.11
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    • pp.911-914
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    • 2011
  • We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

Effect of Substrate Preheating on the Characteristics of Flexible and Transparent ITO Electrodes Grown by Roll-to-Roll Sputtering for Touch Panel Applications (기판 열처리가 롤투롤 스퍼터를 이용하여 성장시킨 터치 패널용 유연 ITO 투명 전극의 특성에 미치는 효과 연구)

  • Kim, Dong-Ju;Lee, Won-Young;Kim, Bong-Seok;Kim, Han-Ki
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.4
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    • pp.327-332
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    • 2010
  • We report on the effect of PET substrate preheating on the characteristics of the flexible and transparent indium tin oxide (ITO) electrode grown by a specially designed roll-to-roll sputtering system for touch panel applications. It was found that electrical and optical properties of the roll-to-roll sputter grown ITO film were critically dependent on the preheating of the PET substrate. In addition, the roll-to-roll sputter-grown ITO film after post annealing test at $140^{\circ}C$ for 90 min showed stable electrical and optical properties. The low sheet resistance and high optical transmittance of the ITO film grown on the preheated PET substrate demonstrate that the preheating process before ITO sputtering is one of the effective way to improve the characteristics of ITO/PET film. Furthermore, the superior flexibility of the ITO electrode grown on the preheated PET substrate indicates that the preheating treatment is a promising technique to obtain robust ITO/PET sample for touch panel applications.

Improved Light Output of GaN-Based Light-Emitting Diodes with ZnO Nanorod Arrays (ZnO 나노로드 배열에 의한 GaN기반 광다이오드의 광추출율 향상)

  • Lee, Sam-Dong;Kim, Kyoung-Kook;Park, Jae-Chul;Kim, Sang-Woo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.59-60
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    • 2008
  • GaN-based light-emitting diodes (LEDs) with ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode were demonstrated. ZnO nanorods were grown into aqueous solution at low temperature of $90^{\circ}C$. Under 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was remarkably increased by about 40 % of magnitude compared to the conventional LED with only planar ITO. The enhancement of light output by the ZnO nanorod arrays is due to the formation of side walls and a rough surface resulting in multiple photon scattering at the LED surface.

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Design and Fabrication of a Micro Gas Sensor Using Nano Sensing Materials on Multi-layer Type Micro Platform with Low Power Consumption (마이크로 플랫폼 상에 나노 감지 재료를 이용한 저전력 NOX 센서의 설계 및 제조)

  • Park, Sang-Il;Park, Joon-Shik;Lee, Min-Ho;Park, Kwang-Bum;Kim, Seong-Dong;Park, Hyo-Derk;Lee, In-Kyu
    • IEMEK Journal of Embedded Systems and Applications
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    • v.2 no.2
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    • pp.76-81
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    • 2007
  • A novel multi-layer type micro gas sensor for $NO_X$ detection was designed and fabricated. Micro platform defined as type II-1 in this article for micro gas sensor was fabricated using the MEMS technology to meet the demanding needs of lower power consumption. Nano composite materials were fabricated with nanosized tin oxide powder and $\underline{m}$ulti-$\underline{w}$all $\underline{c}$arbon $\underline{n}$ano $\underline{t}$ube (MWCNT) to improve sensitivity. We investigated characteristics of fabricated multi-layer type micro gas sensor with $NO_2$ concentration variations at constant 2.2 V. Sensitivity (S) of micro gas sensor were observed to increase from 2.9, to 7.4 and 11.2 as concentrations of $NO_2$ gases increased from 2.4 ppm, to 3.6 ppm and 4.9 ppm. When 2.4 ppm of $NO_2$ gas was applied, response time and recovery time of micro gas sensor were recorded as 101 seconds and 142 seconds, respectively.

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