Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improved Light Output of GaN-Based Light-Emitting Diodes with ZnO Nanorod Arrays

ZnO 나노로드 배열에 의한 GaN기반 광다이오드의 광추출율 향상

  • Lee, Sam-Dong (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology) ;
  • Kim, Kyoung-Kook (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology) ;
  • Park, Jae-Chul (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology) ;
  • Kim, Sang-Woo (Kumoh National Institute of Technology, Samsung Advanced Institute of Technology)
  • 이삼동 (금오공과대학교, 삼성종합기술원) ;
  • 김경국 (금오공과대학교, 삼성종합기술원) ;
  • 박재철 (금오공과대학교, 삼성종합기술원) ;
  • 김상우 (금오공과대학교, 삼성종합기술원)
  • Published : 2008.11.06
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Abstract

GaN-based light-emitting diodes (LEDs) with ZnO nanorod arrays on a planar indium tin oxide (ITO) transparent electrode were demonstrated. ZnO nanorods were grown into aqueous solution at low temperature of $90^{\circ}C$. Under 20 mA current injection, the light output efficiency of the LED with ZnO nanorod arrays on ITO was remarkably increased by about 40 % of magnitude compared to the conventional LED with only planar ITO. The enhancement of light output by the ZnO nanorod arrays is due to the formation of side walls and a rough surface resulting in multiple photon scattering at the LED surface.

Keywords