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http://dx.doi.org/10.4313/JKEM.2011.24.11.911

Optimization of Electrical/Optical Properties of ITO/Al Based Reflector for Vertical-type UV LEDs via SF6 Plasma Treatments  

Shin, Ki-Seob (School of Electrical Engineering, Korea University)
Kim, Dong-Yoon (School of Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.24, no.11, 2011 , pp. 911-914 More about this Journal
Abstract
We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.
Keywords
Ultraviloet light-emitting diodes; Plasma treatment; Schottky barrier height;
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