• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.7
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• pp.1363-1374
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• 2009

This paper reviews the characteristics and technical trends in Power MOSFET technology that are leading to improvements in power loss for power electronic system. The silicon bipolar power transistor has been displaced by silicon power MOSFET's in low and high voltage system. The power electronic technology requires the marriage of power device technology with MOS-gated device and bipolar analog circuits. The technology challenges involved in combining power handling capability with finger gate, trench array, super junction structure, and SiC transistor are described, together with examples of solutions for telecommunications, motor control, and switch mode power supplies.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.686-694
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• 2014

A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1532-1537
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• 2009

Nowadays the diversity and large-capacity of electric appliances are strong effect on electrical fires augment in an alarming way. But, as the inactive response characteristics of the existing RCD (Residual Current protective Device) used on low voltage power distribution lines, so control of overload and electric short circuit faults, major causes of electrical fires, are not enough. Therefore this paper is confirmed the unreliability of the existing RCD by electrical faults simulation and is proposed a auxiliary trip device of RCD by using a high precision current sensor (namely, reed switch) for the prevention of electrical disasters in low voltage power distribution lines caused by overload or electric short circuit faults. The sensitive reed switch in the proposed ATD (auxiliary trip device) exactly detects the increased magnetic flux with the overload or the short current caused by a number of electrical faults, and then rapidly cuts off the existing RCD. The proposed auxiliary trip device of RCD is confirmed the excellent characteristics in response velocity and accuracy in comparison with the conventional circuit breaker through various operation performance analysis. The proposed ATD can also prevent electrical disaster, like as electrical fires, which resulted from the malfunction and inactive response characteristics of the existing RCD.

• Journal of Satellite, Information and Communications
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• v.7 no.3
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• pp.69-74
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• 2012

According to convert from analogue TV signal to Digital TV signal on 31 December 2012, research on utilization of TV white space (TVWS) has been being actively proceed. It is expected that various low power devices use the TVWS, so interference between DTV relay system and low power devices using in TVWS can be occurred. Therefore, in this paper, we analyzed the interference between DTV relay system and low power devices. So, we calculated a minimum coupling loss (MCL) and compare the resulting value with a path loss for determining whether there exists a potential interference or not. The minimum separation distance is determined when the path loss is larger than the MCL. In the simulation results, we setup the victim and interferer system as DTV relay system and low power devices, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.15-23
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• 2015

Lead-free bonding has attracted significant attention for automotive power device packaging due to the upcoming environmental regulations. Silver (Ag) is one of the prime candidates for alternative of high Pb soldering owing to its superior electrical and thermal conductivity, low temperature sinterability, and high melting temperature after bonding. In this paper, the bonding technology by Ag paste was introduced. We classified into two Ag paste bonding according to applied pressure, and each bonding described in detail including recent studies.

• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.1
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• pp.73-80
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• 2015

The valve device is installed in hazardous areas, such as a chemical plant explosion has been sealed with fire protection device to prevent the risk of explosion. In this paper, due to the explosion-proof devices using external power the device can not be used in infrared sensors and Zigbee sensor valve device by measuring the open degree of valve opening and closing of the danger zone to check whether. Valve opening and closing operation log screen time, we propose a low-power operation monitoring system administrators to manage and control the plant. Develop power control relay board apply an improved algorithm to apply the asynchronous LPL power management. The plant monitoring system and explosion-proof valve opening and closing the valve system with the intelligent device designed and implemented and tested it.

• 제어로봇시스템학회:학술대회논문집
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• 2001.10a
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• pp.114.6-114
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• 2001

According to expansion of wireless communication system and mobile device, interest has been growing in personal navigation system integrated with wireless system. In portable consumer electronics, such as cellular phones, GPS and PDA, one of major design factors is the power consumption. Solutions of reducing the power dissipation are low voltage, low system clock power management and so on. This paper develops a GPS receiver based on the advanced power management algorithm that achieves very low average power consumption. Both RF and DSP chips are powered down and reactivated only when the position fixing is required. In order to run, the developed includes the RTC calibration function and the fast reacquisition function using XMC (eXtended Multiple Correlator) ...

• KIPS Transactions on Computer and Communication Systems
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• v.9 no.10
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• pp.213-220
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• 2020

The power consumption and performance of hardware-based mobile and IoT embedded systems that require high specifications are one of the important issues of these systems. In particular, the problem of excessive power consumption is because it causes a problem of increasing heat generation and shortening the life of the device. In addition, in the same environment, software also needs to perform stable operation in limited power and memory, thereby increasing power consumption of the device. In order to solve these issues, we propose a Low level power improvement via identifying performance dissipation. The proposed method identifies complex modules (especially Cyclomatic complexity, Coupling & Cohesion) through code visualization, and helps to simplify low power code patterning and performance code. Therefore, through this method, it is possible to optimize the quality of the code by reducing power consumption and improving performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.190-193
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• 2013

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.416-421
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• 2011

Nowadays, the increasing demands upon mobile devices such as wireless sensor networks and the recent advent of low power electrical devices such as MEMS make such renewable power sources attractive. A vibration-driven MEMS lead zirconate titanate $Pb(Zr,Ti)O_3$ (PZT) cantilever device is developed for energy harvesting application. This paper presents a piezoelectric based energy harvester which is suitable for power generating from conventional vibration and has in providing energy for low power electron ic devices. The PZT cantilever is used d33 mode to get the electrical power. The PZT cantilever based energy harvester with the dimension of 7 mm${\times}$3 mm${\times}$0.03 mm is fabricated using micromachining technologies. This PZT cantilever has the mechanical resonance frequency with a 900 Hz. With these conditions, we get experimentally the 37 uW output power from this device with the application of 1g acceleration using the 900 Hz vibration. From this study, we show the feasibility of one of energy harvesting candidates using PZT based structure. This PZT energy harvester could be used for various applications such a batteryless micro sensors and micro power generators.