• Molecular & Cellular Toxicology
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• v.1 no.4
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• pp.275-280
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• 2005

Carbon tetrachloride ($CCl_4$) is well known hepatotoxicant. Its overdose cause severe centrilobular hepatic necrosis in human and experimental animals. We administered $CCl_{4}$ at low (0.2 mL/kg p.o.) and high (2 mL/kg p.o.) doses to mice. Mice were sacrificed at 24 h after administration. We evaluated liver toxicity by serum AST and ALT level and by microscopic observation. Using cDNA chip, we conducted gene expression analysis in liver. Mean serum activities of the hepatocellular leakage enzymes, ALT and AST, were significantly increased compare to control, respectively, in the low and high dose groups. H&E evaluation of stained liver sections revealed $CCl_{4}-related$ histopathological findings in mice. Moderate centrilobular hepatocellular necrosis was present in all $CCl_{4}$ treated mice. We found that gene expression pattern was very similar between low and high dose group. However, some stress related genes were differently expressed. These results could be a molecular signature for the degree of liver injury. Our data suggest that the degree of severity could be figure out by gene expression profiling.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.479-479
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• 2011

Flexible inverters based on complementary thin-film transistor (CTFTs) are important because they have low power consumption and other advantages over single type TFT inverters. In addition, integrated CTFTs in flexible electronic circuits on low-cost, large area and mechanically flexible substrates have potentials in various applications such as radio-frequency identification tags (RFIDs), sensors, and backplanes for flexible displays. In this work, we introduce flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The CTFTs were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. Basic electrical characteristics of individual transistors and the whole CTFTs were measured by a semiconductor parameter analyzer (HP4145B, Agilent Technologies) at room temperature in the dark. Performance of those devices then was measured under static and dynamic mechanical deformation. Effects of cyclic bending were also examined. The voltage transfer characteristics (Vout- Vin) and voltage gain (-dVout/dVin) of flexible inverter circuit were analyzed and the effects of mechanical bending will be discussed in detail.

• Korean Journal of Agricultural Science
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• v.40 no.3
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• pp.197-202
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• 2013

This study was aimed to find the storage potential of low temperature adapted shiitake mushroom under freezing temperature ($-3^{\circ}C$). Fresh shiitake mushroom was harvested at late Feb. and cooled to target temperature, $-3^{\circ}C$ in the cooling room for 24 hr. Cooled mushroom were then placed in plastic boxes, wrapped with plastic film ($30{\mu}m$), and stored at $-3^{\circ}C$ for 2 months. Weight loss of mushroom was ranged from 2.1 to 3.2%. Dry weight per unit fresh weight, however, was slightly increased because of moisture loss. Firmness of fruit body increased from $0.95kg/cm^{-2}$ (before storage) to $1.13kg/cm^{-2}$ (after 2 month storage). About half amount of starch was lost during 2 month storage. The amount of total and reducing sugars remained relatively constant. After storage, freshness of mushroom was recovered by thawing treatment. When recovered mushroom were packaged with styrofoam tray and PVC wrapping, and exposed to ambient and $10^{\circ}C$, respectively, brown spot on the gill of fruit body was found and slight decay symptom was also found at ambient temperature only but not at $10^{\circ}C$. Results indicated that low temperature adapted shiitake mushroom has a storage potential under freezing temperature ($-3^{\circ}C$). Freezing storage technology of fresh shiitake mushroom will contribute the increase of storability up to 2 months.

• Molecules and Cells
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• v.39 no.3
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• pp.250-257
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• 2016

Abiotic stresses such as drought and low temperature critically restrict plant growth, reproduction, and productivity. Higher plants have developed various defense strategies against these unfavorable conditions. CaPUB1 (Capsicum annuum Putative U-box protein 1) is a hot pepper U-box E3 Ub ligase. Transgenic Arabidopsis plants that constitutively expressed CaPUB1 exhibited drought-sensitive phenotypes, suggesting that it functions as a negative regulator of the drought stress response. In this study, CaPUB1 was over-expressed in rice (Oryza sativa L.), and the phenotypic properties of transgenic rice plants were examined in terms of their drought and cold stress tolerance. Ubi:CaPUB1 T3 transgenic rice plants displayed phenotypes hypersensitive to dehydration, suggesting that its role in the negative regulation of drought stress response is conserved in dicot Arabidopsis and monocot rice plants. In contrast, Ubi:CaPUB1 progeny exhibited phenotypes markedly tolerant to prolonged low temperature ($4^{\circ}C$) treatment, compared to those of wild-type plants, as determined by survival rates, electrolyte leakage, and total chlorophyll content. Cold stress-induced marker genes, including DREB1A, DREB1B, DREB1C, and Cytochrome P450, were more up-regulated by cold treatment in Ubi:CaPUB1 plants than in wild-type plants. These results suggest that CaPUB1 serves as both a negative regulator of the drought stress response and a positive regulator of the cold stress response in transgenic rice plants. This raises the possibility that CaPUB1 participates in the cross-talk between drought and low-temperature signaling pathways.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.816-820
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• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.41 no.6
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• pp.17-25
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• 2004

In this paper, we propose a new small swing domino logic for low-power consumption. To reduce the power consumption, both the precharge node and the output node swing the range from 0 to $V_{REF}$- $V_{THN}$, where $V_{REF}$=VDD-n $V_{THN}$ (n=1, 2, and 3). This can be done by adding the inverter structure on domino logic that allows a full swing or a small swing on its input terminal without leakage current. Compared to previous works, the proposed structure can save the power consumption of more than 30% for n=0, 1, 2, and 3 in the equation of $V_{REF}$=VDD-n $V_{THN}$. A multiplier applying the proposed domino logic has been designed and fabricated using a 0.35-${\mu}{\textrm}{m}$ n-well CMOS process under 3.3-V supply voltage. Compared with other previous works, it shows a 30% power reduction and a better feature in power-delay product.lay product.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.1-7
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• 2014

A bidirectional transient voltage suppression (TVS) diode consisting of specially designed $p^--n^{{+}+}-p^-$ multi-junctions was developed using low temperature (LT) epitaxy and fabrication processes. Its electrostatic discharge (ESD) performance was investigated using I-V, C-V, and various ESD tests including the human body model (HBM), machine model (MM) and IEC 61000-4-2 (IEC) analysis. The symmetrical structure with very sharp and uniform bidirectional multi-junctions yields good symmetrical I-V behavior over a wide range of operating temperature of 300 K-450 K and low capacitance as 6.9 pF at 1 MHz. In addition, a very thin and heavily doped $n^{{+}+}$ layer enabled I-V curves steep rise after breakdown without snapback phenomenon, then resulted in small dynamic resistance as $0.2{\Omega}$, and leakage current completely suppressed down to pA. Manufactured bidirectional TVS diodes were capable of withstanding ${\pm}4.0$ kV of MM and ${\pm}14$ kV of IEC, and exceeding ${\pm}8$ kV of HBM, while maintaining reliable I-V characteristics. Such an excellent ESD performance of low capacitance and dynamic resistance is attributed to the abruptness and very unique profiles designed very precisely in $p^--n^{{+}+}-p^-$ multi-junctions.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.20-27
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• 2011

A CMOS Image Sensor(CIS) mounted on mobile appliances always needs a low power consumption because of the battery life cycle. In this paper, we propose novel power reduction techniques such as a data flip-flop circuit with leakage current elimination, a low power single slope A/D converter with a novel comparator, and etc. Based on 0.13um CMOS process, the chip satisfies QVGA resolution($320{\times}240$ pixels) whose pitch is 2.25um and whose structure is 4-Tr active pixel sensor. From the experimental results, the ADC in the middle of CIS has a 10-b resolution, the operating speed of CIS is 16 frame/s, and the power dissipation is 25mW at 3.3V(Analog)/1.8V(Digital) power supply. When we compare the proposed CIS with conventional ones, the power consumption is reduced approximately by 22% in sleep mode, 20% in operating mode.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.382-386
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• 2002

We studied growth and characterization of $SrBi_2Ta_2O_9$ (SBT) thin films fabricated by low temperature process under vacuum and/or oxygen ambient. A metal organic decomposition (MOD) method based on a spin-on technique and annealing process using a rapid thermal annealing (RTA) method was used to prepare the SBT films. The crystallinity of a ferroelectric phase of SBT thin films is related to the oxygen partial pressure during RTA process. Under an oxygen partial pressure higher than 30 Torr, the crystallization temperature inducing the ferroelectric SBT phase can be lowered to $650^{\circ}C$. Those films annealed at $650^{\circ}C$ in vacuum and oxygen ambient showed good ferroelectric properties, that is, the memory window of 0.5~0.9 V at applied voltage of 3~7 V and the leakage current density of 1.80{\times}10^{-8}$ A/$\textrm{cm}^2$ at an applied voltage of 5V. In comparison with the SBT thin films prepared at 80$0^{\circ}C$ in $O_2$ ambient by furnace annealing process, the SBT thin films prepared at $650^{\circ}C$ in vacuum and oxygen ambient using the RTA process showed a good crystallization and electrical properties which would be able to apply to the virtul device fabrication precess.