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http://dx.doi.org/10.4313/JKEM.2013.26.11.816

The Characteristics of Silicon Nitride Films Grown at Low Temperature for Flexible Display  

Lim, Nomin (Department of Control and Instrumentation, Korea University)
Kim, Moonkeun (Department of Control and Instrumentation, Korea University)
Kwon, Kwang-Ho (Department of Control and Instrumentation, Korea University)
Kim, Jong-Kwan (Department of Electrical and Electronic Engineering, Anyang University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.26, no.11, 2013 , pp. 816-820 More about this Journal
Abstract
We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.
Keywords
TFT; Low temperature; PECVD; $SiN_x$; Flexible display;
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