• Journal of Power Electronics
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• v.15 no.1
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• pp.86-95
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• 2015

An active clamp high step-up boost converter with a coupled inductor is proposed in this paper. In the proposed strategy, a coupled inductor is adopted to achieve a high voltage gain. The clamp circuit is included to achieve the zero-voltage-switching (ZVS) condition for both the main and clamp switches. A rectifier composed of a capacitor and a diode is added to reduce the voltage stress of the output rectifier diode. As a result, diodes with a low reverse-recovery time and forward voltage-drop can be utilized. Since the voltage stresses of the main and clamp switches are far below the output voltage, low-voltage-rated MOSFETs can be adopted to reduce conduction losses. Moreover, the reverse-recovery losses of the diodes are reduced due to the inherent leakage inductance of the coupled inductor. Therefore, high efficiency can be expected. Firstly, the derivation of the proposed converter is given and the operation analysis is described. Then, a steady-state performance analysis of the proposed converter is analyzed in detail. Finally, a 250 W prototype is built to verify the analysis. The measured maximum efficiency of the prototype is 95%.

• Electrical & Electronic Materials
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• v.9 no.1
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• pp.9-17
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• 1996

Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N$_{2}$O to N$_{2}$O+NH$_{3}$ gas ratio is studied. It has been found that hydrogen concentration of PECVD oxynitride film was decreased from 4.25*10$^{22}$ [cm$^{-2}$ ] to 1.18*10$^{21}$ [cm$^{-2}$ ] according to the increase of N$_{2}$O gas. It was also found that PECVD oxynitride films have low trap density in the oxide and interface in comparison with PECVD nitroxide films, and has higher refractive index and capacitance than oxide films. In particular, oxynitride film formed in gas ratio of N$_{2}$O/(N$_{2}$O+NH$_{3}$)= 0.88 shows increased capacitance and decreased leakage current due to small portion of hydrogen in oxide and the accumulation of nitrogen about 4[atm.%] at the interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05b
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• pp.19-22
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• 2004

The resonant planar transformer, which had power capacity of 300 W, input voltage of 220 V, output voltage of 15 V, and switching frequency of 500 kHz, was designed and manufactured by using the planar core with large effective area and the flat copper lead frames for miniaturization and high efficiency of the switching mode power supply (SMPS). As well as, a resonant converter equipped with the above mentioned planar transformer was manufactured and electromagnetic characteristics were investigated. The numerical value of turns for 1st and 2nd winding were 12 and 2 respectively. The self inductance of 1st winding was 33.2 ${\mu}H$, very low leakage inductance of 1.27 ${\mu}H$, and the coupling factor of 0.98 were obtained at switching frequency of 300 kHz. The high efficiency of 88.21 % for the SMPS equipped with planar transformer was obtained at power capacity of 300 W.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.14 no.3
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• pp.245-251
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• 2016

Soil can be contaminated by radioactive materials due to nuclide leakage following unexpected situations during the decommissioning of a nuclear power plant. Soil decontamination is necessary if contaminated land is to be reused for housing or industry. The present study classifies various soil remediation technologies into biological, physics/chemical and thermal treatment and analyzes their principles and treatment materials. Among these methods, this study selects technologies and categorizes the economics, applicability and technical characteristics of each technology into three levels of high, medium and low by weighting the various factors. Based on this analysis, the most applicable soil decontamination technology was identified.

• Journal of Power Electronics
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• v.15 no.2
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• pp.309-318
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• 2015

This study proposes a dual-output single-stage bridgeless single-ended primary-inductor converter (DOSSBS) that can completely remove the front-end full-bridge alternating current-direct current rectifier to accomplish power factor correction for universal line input. Without the need for bridge diodes, the proposed converter has the advantages of low component count and simple structure, and can thus significantly reduce power loss. DOSSBS has two uncommon output ports to provide different voltage levels to loads, instead of using two separate power factor correctors or multi-stage configurations in a single stage. Therefore, this proposed converter is cost-effective and compact. A magnetically coupled inductor is introduced in DOSSBS to replace two separate inductors to decrease volume and cost. Energy stored in the leakage inductance of the coupled inductor can be completely recycled. In each line cycle, the two active switches in DOSSBS are operated in either high-frequency pulse-width modulation pattern or low-frequency rectifying mode for switching loss reduction. A prototype for dealing with an $85-265V_{rms}$ universal line is designed, analyzed, and built. Practical measurements demonstrate the feasibility and functionality of the proposed converter.

• Journal of the Korean Vacuum Society
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• v.18 no.4
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• pp.254-258
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• 2009

We herein report on polymer phosphorescent light-emitting devices doped with iridium complex. The emitting layer of poly(N-vinylcabazole) and tris(2-phenylpyridine)iridium was fabricated by low speed dip-coating of 10, $20{\mu}m$/s. The devices showed stable current increasing leakage current at turn-on voltage. Compared to conventional spin-coating based organic light-emitting devices, the driving voltage by dip-coating observed lower values of 5.8 and 6.7 V at the luminance of 100 Cd/$cm^2$.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.75-84
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• 2018

According to IHS, the overall display market is expected to grow at an average annual rate of 6% from $ 104 billion in 2016, to $ 138 billion in 2021. Among them, the OLED display panel will grow from $ 15 billion to $ 41 billion over the same period, forecasting a high annual growth rate of 22%. However, the refraction index, light leakage, bubble generation, adhesion deterioration, peeling phenomenon, moisture resistance, light transmittance, low turbidity. OCA (optically clear adhesive), which solves problems such as improving the resistance of the conductive film, is largely dependent on imported products. In addition, in 2016, the world market is worth KRW4.3 trillion, and the adhesive market has a large market effect. In this study, we tried to analyze the technical competitiveness of patent and thesis by classifying OCA (optically clear adhesive, optical adhesive) for display panel by curing method. As a result of the study, the amount of patents and papers in Korea was found to be superior to other competitors, but the quality level was low. In particular, it was found that the achievements of the papers in the hot melt field are lacking and the government should expand its support.

• ETRI Journal
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• v.42 no.6
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• pp.943-950
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• 2020

We propose 8.2-GHz band radar RFICs for an 8 × 8 phased-array frequency-modulated continuous-wave receiver developed using 65-nm CMOS technology. This receiver panel is constructed using a multichip solution comprising fabricated 2 × 2 low-noise amplifier phase-shifter (LNA-PS) chips and a 4ch RX front-end chip. The LNA-PS chip has a novel phase-shifter circuit for low-voltage operation, novel active single-to-differential/differential-to-single circuits, and a current-mode combiner to utilize a small area. The LNA-PS chip shows a power gain range of 5 dB to 20 dB per channel with gain control and a single-channel NF of 6.4 dB at maximum gain. The measured result of the chip shows 6-bit phase states with a 0.35° RMS phase error. The input P1 dB of the chip is approximately -27.5 dBm at high gain and is enough to cover the highest input power from the TX-to-RX leakage in the radar system. The gain range of the 4ch RX front-end chip is 9 dB to 30 dB per channel. The LNA-PS chip consumes 82 mA, and the 4ch RX front-end chip consumes 97 mA from a 1.2 V supply voltage. The chip sizes of the 2 × 2 LNA-PS and the 4ch RX front end are 2.39 mm × 1.3 mm and 2.42 mm × 1.62 mm, respectively.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.16 no.8
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• pp.2490-2506
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• 2022

In Mobile Edge Computing (MEC), attackers can speculate and mine sensitive user information by eavesdropping wireless channel status and offloading usage pattern, leading to user privacy leakage. To solve this problem, this paper proposes a Privacy-preserving and Energy-efficient Offloading Algorithm (PEOA) based on Lyapunov optimization. In this method, a continuous Markov process offloading model with a buffer queue strategy is built first. Then the amount of privacy of offloading usage pattern in wireless channel is defined. Finally, by introducing the Lyapunov optimization, the problem of minimum average energy consumption in continuous state transition process with privacy constraints in the infinite time domain is transformed into the minimum value problem of each timeslot, which reduces the complexity of algorithms and helps obtain the optimal solution while maintaining low energy consumption. The experimental results show that, compared with other methods, PEOA can maintain the amount of privacy accumulation in the system near zero, while sustaining low average energy consumption costs. This makes it difficult for attackers to infer sensitive user information through offloading usage patterns, thus effectively protecting user privacy and safety.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.80-80
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• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.