Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)
- Volume 9 Issue 1
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- Pages.9-17
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- 1996
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- 2982-6268(pISSN)
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- 2982-6306(eISSN)
Characteristics of oxynitride films grown by PECVD using $N_2O$ gas
$N_2O$ 가스를 사용하여 PECVD로 성장된 Oxynitride막의 특성
Abstract
Plasma enhanced chemical vapor deposition (PECVD) allows low temperature processing and so it is widely used, but it causes instability of devices due to serious amount of impurities within the film. In this paper, electrical and chemical characteristics of the PECVD oxynitride film formed by different N