• 유체기계공업학회:학술대회논문집
• /
• 2004.12a
• /
• pp.140-150
• /
• 2004

In this study, the effect of relative position of the blade for the fixed vane has been investigated on blade surface heat transfer. The experiments were conducted in a low speed stationary annular cascade, and heat transfer of blade was examined for six positions within a pitch. Turbine test section has one stage composed of sixteen guide vanes and blades. The chord length of the tested blade is 150 mm and the mean tip clearance of the blade having flat tip is about $2.5\%$ of the blade chord. For the detailed mass transfer measurements on the blade surfaces, a naphthalene sublimation technique was used. The inlet flow Reynolds number is fixed to $1.5{\times}10^5$. Complex heat transfer characteristics are observed on the blade surface due to various flow characteristics, such as separation bubble, relaminarization, transition to turbulence and leakage vortices. The distributions of velocity and turbulence intensity change significantly with the relative position due to the blockage effect of the blade. This causes the variation of heat transfer patterns on the blade surface. The results show that the flow near the leading edge get highly disturbed and deflected toward the either side of the blade when the blade leading edge is positioned close to the trailing edge of the vane. Therefore, separation bubble disappears on the pressure side and overall heat transfer on the relaminarization region is increased. But, due to reduced tip gap flow at the upstream region, the effect of leakage flow on the upstream region of the blade surface is weakened. Thus, the heat transfer characteristics significantly change with the blade positions.

• Korean Journal of Materials Research
• /
• v.28 no.2
• /
• pp.118-123
• /
• 2018

5 nm-thick $SiO_2$ layers formed by plasma-enhanced chemical vapor deposition (PECVD) are densified to improve the electrical and interface properties by using nitric acid oxidation of Si (NAOS) method at a low temperature of $121^{\circ}C$. The physical and electrical properties are clearly investigated according to NAOS times and post-metallization annealing (PMA) at $250^{\circ}C$ for 10 min in 5 vol% hydrogen atmosphere. The leakage current density is significantly decreased about three orders of magnitude from $3.110{\times}10^{-5}A/cm^2$ after NAOS 5 hours with PMA treatment, although the $SiO_2$ layers are not changed. These dramatically decreases of leakage current density are resulted from improvement of the interface properties. Concentration of suboxide species ($Si^{1+}$, $Si^{2+}$ and $Si^{3+}$) in $SiO_x$ transition layers as well as the interface state density ($D_{it}$) in $SiO_2/Si$ interface region are critically decreased about 1/3 and one order of magnitude, respectively. The decrease in leakage current density is attributed to improvement of interface properties though chemical method of NAOS with PMA treatment which can perform the oxidation and remove the OH species and dangling bond.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.54 no.3
• /
• pp.109-113
• /
• 2005

It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

• Elastomers and Composites
• /
• v.49 no.4
• /
• pp.305-312
• /
• 2014

Most of military supersonic aircraft use an afterburner. It plays an important role in performing unusual duties for supersonic flight, takeoff, and combat situations. Recently, repetitive fuel leakage from the inner piston packing rubber of afterburner fuel pump in an aircraft J85-GE-21 turbojet engine has happened. These failures have only happened in one manufacturer's parts of two manufacturers. Thus, the cause of these failures was investigated through the comparative analysis for both the failed and the unfailed with two different manufacturers using various analysis methods. The failure analysis was performed using analysis methods such as swelling or swelling ratio, total sulfur content, polymer identification, loading and surface area of carbon black, and hardness. Consequently, the main cause of this failure was identified to be insufficient loading of carbon black as a reinforcing agent, together with small surface area of carbon black and somewhat low sulfur content.

• Journal of the Korean Vacuum Society
• /
• v.18 no.1
• /
• pp.49-53
• /
• 2009

The chemical properties of SiOC film was studied for inter-layer insulator. SiOC film was formed with non polarity due to the appropriate union by the alkyl and hydroxyl group. An amorphous structure of non polarity can induce the low dielectric constant materials. The chemical properties of thin film can define the bonding structure owing to the ionic variation, and the analysis of chemical properties was researched by the carbon content using the FTIR spectra, and induced the film with non polarity. The electrical properties is the electron flow, and is always not the same as the chemical properties. The electrical properties of SiOC film with various flow rate ratios was analyzed and researched the correlation between the chemical properties. SiOC film showed the increasing of the leakage current after annealing process, and abruptly increased the carbon content at some samples. But the sample with increasing the carbon content decreased the leakage current. It means that the chemical properties is not the same as the electrical properties, and the carbon is related with the variation of the bonding structure, and does not contribute the current flow.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05a
• /
• pp.11-20
• /
• 2002

This paper describes the magnetic flux leakage(MFL) type non-destructive testing(NDT) system to detect the 3D defects on underground gas pipe. Magnetic systems with permanent magnets and yokes are analyzed by 3D non-lineal finite element method(FEM) with optimum design. In case of under-saturation of gas pipe, sensing signals are too weak to detect. In case of over-saturation, the changes of the sensing signals are too low to detect the defects sensitively. So, the operating points of the magnetic system are optimized to increase the changes of the MFL signals. The effects of the depth and size of the defects on the sensing signals are analyzed to define the range and resolution of the MFL sensors. To increase the sensor's sensitivity, the back-yoke sensors are introduced and tested.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.9
• /
• pp.1615-1622
• /
• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Annals of Coloproctology
• /
• v.34 no.6
• /
• pp.317-321
• /
• 2018

Purpose: We evaluate the role of transanal tube drainage (TD) as a conservative treatment for patients with anastomotic leakage (AL). Methods: Patients treated for AL who had undergone a low or an ultralow anterior resection with colorectal or coloanal anastomosis for the treatment of rectal cancer between January 2013 and January 2017 were enrolled in this study. The data were collected prospectively and analyzed retrospectively. The primary outcomes were the diagnosis and the management of AL. Results: Two hundred thirteen consecutive patients, 122 males and 91 females, were included. The mean age was $66.91{\pm}11.15years$, and the median body mass index was $24kg/m^2$ (range, $20-35kg/m^2$). The median tumor distance from the anal verge was 8 cm (range, 4-12 cm). Ninety-three patients (44%) received neoadjuvant therapy for nodal disease and/or locally advanced rectal cancer. Only 13 patients (6%) developed AL. Six patients developed subclinical AL as they had a defunctioning ileostomy at the time of the initial procedure. They were treated conservatively with TD under endoscopic guidance in the endoscopy unit and received intravenous antibiotics. Six weeks after discharge, these 6 patients underwent follow-up flexible sigmoidoscopy which showed a completely healed anastomotic defect with no residual stenosis. Seven patients developed a clinically significant AL and required reoperation with pelvic abscess drainage and Hartmann colostomy formation. Conclusion: These results suggest that TD for management of patients with AL is safe, cheap, and effective. Salvaging the anastomosis will help decrease the need for Hartmann colostomy formation. Proper patient selection is important.

• Journal of the Korea Institute of Information Security & Cryptology
• /
• v.22 no.6
• /
• pp.1271-1282
• /
• 2012

Recently, security incidents occur continuously, resulting in the leakages of a large amount of the company's confidential and private information. For these reasons, the security technologies such as the authentication and the access control in order to prevent the information leakage are attracting attention. In particular, location-based authentication that utilizes the user's current location information which is used an authentication factor. And it provides more powerful authentication by controlling the users who attempt to access and blocks internal information leakage path. However, location information must be handled safely since it is the personal information. The location based authentication scheme proposed in this paper enhances the stability of the process location information compared with existing relevant location-based authentication protocol. Also it strengthens the end-user authentication by using one-time password. In addition, the proposed scheme provides authentication to prevent information leakage and employs the concept of the user's physical access control. Resultingly, the proposed scheme can provide higher security than the previous studies, while guarantee to low communication cost.

• Korean small business review
• /
• v.42 no.1
• /
• pp.1-17
• /
• 2020

As technology competition among companies has intensified, the importance of technology protection is increasing day by day. However, according to the status of technology leakage in Korea, the technology protection level of SMEs is weak. SMEs' technology leakage continues to occur, and the damage can be even more serious to SMEs. Thus, the government is operating various support systems for SMEs. However, despite the support system, the interest and use of SMEs is low. This study examines the current status of major support systems for SME technology protection in Korea, and empirically analyzes the recognition and expectation effects of companies on the support systems. Based on the results, this study discusses ways to improve the recognition and use of the support system. The results of this study will contribute to strengthening SMEs 'technology protection by increasing the utility and enhancing the utilization of the support systems.