• Tribology and Lubricants
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• v.35 no.4
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• pp.222-228
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• 2019

As rubber products such as O-rings, which are also known as packings or toric joints, come in regular, long term contact with liquid fuel, they can eventually swell, become mechanically weakened, and occasionally crack; this diminishes both their usefulness and intrinsic lifetime and could cause leaks during the steady-state flow condition of the fuel. In this study, we evaluate the lifetime of such products through compression set tests of FKM, a family of fluorocarbon elastomer materials defined by the ASTM international standard D141; these materials have great compression, sunlight, and ozone resistance as well as a low gas absorption rate. In this process, O-rings are immersed in the liquid fuel of airtight containers that can be expressed as a compression set, and the liquid fuel leakage in a flow rig tester at variable temperatures over 12 months is investigated. Using the Power Law model, our study determined a theoretical O-ring lifetime of 2,647 years, i.e. a semi-permanent lifespan, by confirming the absence of liquid fuel leakage around the O-ring assembled fittings. These results indicate that the FKM O-rings are significantly compatible for fuel tests to evaluate long-term sealing conditions.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.35-35
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• 2003

Recent progress in the integration of the ferroelectric random access memories (FRAM) has attracted much interest. Strontium bismuth tantalate(SBT) is one of the most attractive materials for use in nonvolatile-memory applications due to low-voltage operations, low leakage current, and its excellent fatigue-free property. High-density FRAMs operated at a low voltage below 1.5V are applicable to mobile devices operated by battery. SBT films thinner than 0.1 #m can be operated at a low voltage, because the coercive voltage (Vc) decreases as the film thickness is reduced. In addition, the thickness of the SBT film will have to be reduced so it can fit between adjacent storage nodes in a pedestal type capacitor in future FRAMs.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.2
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• pp.69-73
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• 2014

In this paper, remote control and surveillance monitoring system of HID street-lamp using low-cost type of Zigbee communication module was developed. A plurality of capacitors with different capacity are attached to magnetic ballast for HID lamps. Changes in the amount of illumination can be adjusted by the changes in capacity so that the electric energy can be reduced. In Zigbee communication module, a ATmega128L microprocessor is used and in main CPU, ARM9 Core is used to construct a low-cost smart system. In surveillance monitoring systems, the system was configured to remote monitoring of presence of error in the lamp abnormalities, the status of leakage current and abnormalities of ballasts and capacitors and the validity of the proposed empirical experiment was confirmed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.90-93
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• 1996

The conduction mechanisms of the off-current in low temperature ($\leq$600$^{\circ}C$) processed polycrystalline silicon thin film transistors (LTP poly-Si TFT's) has been systematically studied. Especially, the temperature and bias dependence of the off-current between unpassivated and passivated poly-Si TFT's was investigated and compared. The off-current of unpassivated poly-Si TFT's is due to a resistive current at low gate and drain voltage, thermal emission current at high gate, low drain voltage, and field enhanced thermal emission current in the depletion region near the drain at high gate and drain voltage. After hydrogenation, it was observed that the off-currents were remarkably reduced by plasma-hydrogenation. It was also observed that the off-currents of the passivated poly-Si TFT's are more critically dependent on temperature rather than electric field.

• Proceedings of the KIEE Conference
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• 2002.11c
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• pp.550-553
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• 2002

A source meter is a basic instrument to perform a measurement of DC characteristic of semiconductor devices. the source meter can be used as variable voltage source, variable current source, voltage meter, or current meter. The accuracy of the low current measurement can be improved with the compensation of leakage current and charge and discharge current. In the low current measurement, the RC time constant is extremely big, so the measurement speed is very low. In this thesis, the analysis of the behavior of the measurement current according to the RC time constant and output capacitance and the method to accelerate the measurement speed.

• Journal of Sensor Science and Technology
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• v.24 no.3
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• pp.165-168
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• 2015

We demonstrated low-voltage organic thin-film transistors (OTFTs) with bilayer insulators, high-k polymer and low temperature crosslinkable polymer, on a flexible plastic substrate. Poly (vinylidene fluoridetrifluoroethylene) (P(VDF-TrFE)) and poly (2-vinylnaphthalene) are used for high-k polymer gate insulator and low temperature crosslinkable polymer insulators, respectively. The mobility of flexible OTFTs is $0.17cm^2/Vs$ at gate voltages -5 V after bending operation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.765-770
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• 2003

We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.

• Journal of Electrical Engineering and Technology
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• v.7 no.2
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• pp.163-170
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• 2012

This paper presents a DFT (Discrete Fourier Transform) based estimation algorithm for the parameters of a low-frequency oscillating signal. The proposed method estimates the parameters, i.e., the frequency, the damping factor, the mode amplitude, and the phase, by fitting a discrete Fourier spectrum with an exponentially damped cosine function. Parameter estimation algorithms that consider the spectrum leakage of the discrete Fourier spectrum are introduced. The multi-domain mode test functions are tested in order to verify the accuracy and efficiency of the proposed method. The results show that the proposed algorithms are highly applicable to the practical computation of low-frequency parameter estimations based on DFTs.

• Journal of the Korean Recycled Construction Resources Institute
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• v.4 no.3
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• pp.322-329
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• 2016

This study is about the method to control the quality of material used to repair leakage and crack of concrete structure and suggests the "Temperature Stability Test Method" as a follow-up study. In the result of performance evaluation for 45 samples of 15 types in 5 series, the temperature stability test showed different material changes including rolling down, volume change, and color change as they are frozen and melt repeatedly in the somewhat extreme conditions at low($-20^{\circ}C$) and high($60^{\circ}C$) temperatures, where 13 samples (approx. 29%) and 32 samples (approx. 71%) showed leakage, respectively, in the permeability test to evaluate leakage. This result shows the enough importance of setting the quality control criteria of leakage repair material currently used to maintain concrete structures considering the temperature conditions, and proves the applicability of the Temperature Stability Test Method as a standard test method to ensure long-term durability of concrete structure.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.