• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1688-1690
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• 2002

The unpredictable threat of lightning surge is ever increasing in today's low-voltage power supplies. Thus Surge protection devices for AC mains are more widely used. The false-tripping of the earth leakage breaker (ELB) can be caused by the installation of surge protection devices with MOV. In order to examine the cause of malfunction, the malfunction characteristics of ELBs applied by lightning surge were investigated experimentally. As a result, all of them brought about malfunctions under 7 kV of the impulse voltage. The suitable position of MOV and use of zener diode were suggested to eliminate the problems.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.28-32
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• 2000

Structural and electrical properties of (Ba, Sr)TiO\ulcorner (BST) thin films prepared by pulsed laser depositon were investigated to verify the influences of post-annealing in oxygen ambient. Increase of post-anneal-ing time in oxygen ambient resulted in not only grain growth but also improvement of crystallinity of BST films. Although the post-annealing in oxygen ambient resulted in the increase of surface roughness, it assisted the dielectric constant increase by eliminating oxygen vacancies. The electrical property enhancement including high dielectric constant and low leakage current density was associated with introducing high pressure of oxygen during the post-annealing.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1060-1066
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• 1997

In this paper, the effects of La addition of PLZT thin film prepared by sol-gel method on the capacitor characteristics are investigated for gigabit generation DRAM applications. The addition of La on the PLZT capacitor results in a trade-off between charge storage density(Qc') and leakage current density(Jl). As La content increases, Qc' and permeability(εr) at 0V are reduced while Jl is significantly decreased. It is demonstrated that 5% La doping of PZT can substantially reduce Jl and also improve resistance to fatigue while incurring only minimal degradation of Qc'. Very low leakage current density (5×10-7 A/㎠ even at 125℃) and high charge storage density (100fC/㎛2) under VDD/2=1V conditions are achieved using 5% La doped PZT thin films for gigabit DRAM capacitor dielectrics. In addition, the fatigue and TDDB measurements indicate good reliability of the PLZT capacitors.

• Corrosion Science and Technology
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• v.4 no.1
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• pp.29-32
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• 2005

A various structural materials are used in construction projects such as a stone, concrete, steel materials. Between of them, concrete are used widely. The compressive strength of concrete is high, and its maintenance and management is comparatively easy. The R.C Building will be superannuated as time passes. This program is generated by propagation of cracks. In order to manage such cracks, time and efforts, expense, etc. are required. In this study, glass sensors were embedding in a model beam and column and leakage of fluorescence and adhesive material was investigated. Further, currents in glass pipe were observed to find the leakage of liquid in glass pipes. Progressive cracks generated by cause the fracture of glass pipes. Therefore, the liquid become to flow and electric current stops, and the cracked part of the member can be found easily. Moreover, the adhesive delays progressive cracking system that responds in air, and the life of a structure can be made to extend. The purpose of this research is to develop of low price sensors that can perform of self-diagnosis in addition to ability of concrete repair concrete to damage.

• Korean Journal of Materials Research
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• v.3 no.5
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• pp.482-496
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• 1993

Radiation damage and contamination of silicons etched in the $CF_4+H_2$ and $CHF_3$ magnetron discharges have been characterized using Schottky diode characteristics, TEM, AES, and SIMS as a function of applied magnetic field strength. It turned out that, as the magnetic field strength increased, the radiation damage measured by cross sectional TEM and by leakage current of Schottky diodes decreased colse to that of wet dtched samples especially for $CF_4$ plasma etched samples, For $CF_4+H_2$and $CHF_3$ etched samples, hydrogen from the plasmas introduced extended defects to the silicon and this caused increased leakage current to the samples etched at low magnetic field strength conditions by hydrogen passivation. The thickness of polymer with the increasing magnetic field strength and showed the minimum polymer residue thickness near the 100Gauss where the silicon etch rate was maximum. Also, other contaminants such as target material were found to be minimum on the etched silicon surface near the highest etch rate condition.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.579-580
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• 2006

Simple nonoverlapped source/drain-to-gate MOSFETs to suppress GIDL (gate-induced drain leakage) is simulated with SILVACO simulation tool. Changing spacer thickness for adjusting length of Drain to Gate nonoverlapped region, this simulation observes on/off characteristic of nonoverlapped source/drain-to-gate MOSFETs. Off current is dramatically decreased with S/D to gate nonoverlapped length increasing. The result shows that maximum on/off current ratio is achieved by adjusting nonoverlapped length.

• IEIE Transactions on Smart Processing and Computing
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• v.2 no.4
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• pp.226-239
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• 2013

A number of systems have several on-chip memories with cache memory being one of them. Conventional cache memory consists of SRAM but the ratio of static energy to the total energy of the memory architecture becomes larger as the leakage power of traditional SRAM increases. Spin-Torque Transfer RAM (STT-RAM), which is a variety of Non-Volatile Memory (NVM), has many advantages over SRAM, such as high density, low leakage power, and non-volatility, but it consumes too much writing energy. This study evaluated a wide range of energy consumptions of a two-level cache using NVM partially on a mobile processor. Through a number of experimental evaluations, it was confirmed that the use of NVM partially in the two-level cache effectively reduces energy consumption significantly.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.77-87
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• 1993

PMOSFETs were studied on the effect of Hot-Carrier induced drain leakage current (Gate-Induced-Drain-Leakage). The result turned out that change in Vgl(drain voltage where 1pA/$\mu$m of drain leadage current flows) was largest in the Channel-Hot-Hole(CHH) injection condition and next was in dynamic stress and was smallest in electron trapping (Igmax) condition under various stress conditions. It was analyzed that if electron trapping occurrs in the overlap region of gate and drain(G/D), it reduces GIDL current due to increment of flat-band voltage(Vfb) and if CHH is injected, interface states(Nit) were generated and it increases GIDL current due to band-to-defect-tunneling(BTDT). Especially, under dynamic stress it was confirmed that increase in GIDL current will be high when electron injection was small and CHH injection was large. Therefore as applying to real circuit, low drain voltage GIDL(BTDT) was enhaced as large as CHH Region under various operating voltage, and it will affect the reliablity of the circuit.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.11a
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• pp.15-19
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• 2002

기존 형상의 미세 가열기를 이용한 마이크로 시스템 패키징의 문제점을 해결하기 위해 새로운 형상의 미세 가열기를 제작하여 패키징 실험을 실시하였다. 기존 형상의 미세 가열기와 새로운 미세 가열기의 형상을 각각 제작하여 접합시에 미세 가열기에 발생하는 열분포를 IR 카메라를 이용하여 실험하였다. 기존 형상의 미세 가열기가 불균일하게 가열되는 반면, 새로운 형상의 미세 가열기는 매우 균일하게 가열되는 형상을 나타내었다. IR 카메라 실험을 바탕으로 접합 실험을 실시하였다. 접합 실험시 사용한 미세 가열기는 폭 50$\mu\textrm{m}$, 두께 2$\mu\textrm{m}$로 제작하였으며, 0.2 Mpa의 압력을 Pyrex glass cap에 가한 상태에서 150 mA의 전류를 공급함으로서 접합을 완료하였다. 접합이 완료된 시편들에 대해서 IPA를 통한 leakage 실험을 실시하였으며, 기존 형상의 미세 가열기를 이용한 시편들은 66%가 테스트를 통과한 반면 새로운 형상의 미세 가열기를 이용한 시편들은 85% 이상이 테스트를 통과하였다. Leakage 실험을 통과한 각각의 시편들에 대해서 접합력 측정을 실시한 결과, 기존 형상의 미세 가열기를 이용한 시편들은 15~21 Mpa의 접합력을 나타내었고, 새로운 형상의 미세 가열기를 이용한 시편들은 25~30 Mpa의 우수한 접합력을 나타내었다.

• Journal of the Korean Society of Safety
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• v.31 no.3
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• pp.162-167
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• 2016

As the simple empirical and phenomenological model applied to the analysis of leakage and explosion of chemical substances does not regard numerous variables, such as positional density of installations and equipment, turbulence, atmospheric conditions, obstacles, and wind effects, there is a significant gap between actual accident consequence and computation. Therefore, the risk management of a chemical plant based on such a computation surely has low reliability. Since a process plant is required to have outcomes more similar to the actual outcomes to secure highly reliable safety, this study was designed to apply the CFD (computational fluid dynamics) simulation technique to analyze a virtual prediction under numerous variables of leakages and explosions very similarly to reality, in order to review the computation technique of the practical safety distance at a process plant.