• Journal of the Korea Institute of Military Science and Technology
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• v.5 no.1
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• pp.45-58
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• 2002

In this paper, we designed the circuit of drive control for towing winch. It is composed of reference voltage circuit for driving voltage reference, low pass filter circuit for noise reduction, dead zone circuit for initial transient input, and driving circuit for drum direction/velocity control. Also it is realized a drive control circuit for towing winch drum in accordance with PWM(pulse width modulation) method to suit it's purpose of a large capacity driving system. The performance of the designed circuit is analyzed by experiments and the appliablity for driving the towing winch drum satisfactorily is evaluated through a various testing.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.4
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• pp.388-396
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• 2005

SRM has not been put into practical applications widely because of its large torque ripple, acoustic noise and low power factor. In addition, a traditional position sensor is needed for the drive control. So we propose an improved sensorless drive method of Switched Reluctance Motors using impressed voltage pulses. Conventional impressed voltage pulse method has a problem of phase delay because of low-pass filter. So in this paper we propose an unproved sensorless driving method based on the impressed voltage pulse using new pulse-shift circuit technique that overcomes the phase delay and start-up problem. Proposed method is implemented in a simple analog circuit instead of using an expensive DSP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.1
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• pp.40-46
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• 2019

To study the frequency response characteristics of alternating-current-driven organic light-emitting diodes (OLEDs), we fabricated blue-fluorescent OLEDs and analyzed their electroluminescent characteristics according to the alternating current voltage and frequency. The luminance-frequency characteristics of alternating-current-driven OLED was similar to that of a low-pass filter, and the luminance of high-voltage OLED decreased at higher frequency than low-voltage OLED. The luminance characteristics of the OLED according to the frequency is due to the capacitive reactance in the OLED, generated during the alternating current driving. The frequency response characteristics of the OLED according to the voltage is due to the decrease in internal resistance of the organic layer. In addition, the negative voltage component of the alternating current did not affect the frequency response of the OLED. Therefore, the electroluminescent characteristics of OLED with an alternating current power of 60 Hz are not influenced by the frequency.

• ETRI Journal
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• v.20 no.1
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• pp.37-45
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• 1998

Reduced surface field lateral double-diffused MOS transistor for the driving circuits of plasma display panel and field emission display in the 120V region have been integrated for the first time into a low-voltage $1.2{\mu}m$ analog CMOS process using p-type bulk silicon. This method of integration provides an excellent way of achieving both high power and low voltage functions on the same chip; it reduces the number of mask layers double-diffused MOS transistor with a drift length of $6.0{\mu}m$ and a breakdown voltage greater than 150V was self-isolated to the low voltage CMOS ICs. The measured specific on-resistance of the lateral double-diffused MOS in $4.8m{\Omega}{\cdot}cm^2$ at a gate voltage of 5V.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.1
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• pp.83-89
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• 2013

In order to reduce the power consumption in international standard IEC62087, the luminance efficiency should be improved at the low discharge load rather than at the high discharge load. Thus, this paper analysed the characteristics of the discharge at the panels with ITO Gap of $65{\mu}m$, $80{\mu}m$, and $100{\mu}m$ in 50-inch PDP with FHD resolution. It was well known that the long gap panel improves the luminance and the luminous efficiency. However, it is very difficult to drive the panel due to high driving voltage. When the normal driving method was applied at the panel with ITO gap of $100{\mu}m$, the phenomenon of the double peak was generated in the sustain period. We confirmed that main factor of the double peak is the self-erasing discharge. When the CLHS driving method was applied at the panel with ITO gap of $100{\mu}m$, the self-erasing discharge was improved in the sustain period. Also, the $V_S$ and $V_A$ minimum voltage of the CLHS driving method decreased about 9V and 12V compared with those of the normal driving method. Moreover, when the CLHS driving method was applied to the panel with ITO gap of $100{\mu}m$, the luminance and the luminous efficiency increased compared with those of the normal driving method. The luminance and the luminous efficiency greatly increased at the low discharge load. The less discharge load, the higher increase rate of the luminance and the luminous efficiency. Especially, the luminous efficiency at ITO gap of $100{\mu}m$ increased about 26.3% at the discharge load of 4% compared with that at ITO gap of $65{\mu}m$.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.53-56
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• 2018

In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.

• Journal of the Korean Institute of Telematics and Electronics S
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• v.35S no.8
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• pp.113-119
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• 1998

Driving the electrodeless fluorescent lamp, the high ac voltage with high frequency is required. The linear power amplifier has been widely used as a driving circuit of electrodeless fluorescent lamp. However, the low efficiency of the power amplifier causes the driving circuit to be replaced by a PWM switching inverter. In order to use a PWM switching inverter as the driving circuit to be replaced by a PWM switching inverter. In order to use a PWM switching inverter as the driving circuit of an electrodeless fluorescent lamp, the high switching frequency is required. But due to the switching loss at switches of the inverter, the limitation of high switching frequency appears in the inverter. One solution to this limitation is to reduce the switching loss by using the zero voltage switching technique. In this paper, zero voltage switching resonant inverter for driving an electrodeless fluorescent lamp is discussed. The results of analysis about the inverter are presented and the equations for design are established. And the validity of the analyzed results are verified through the experiment.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1185-1188
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• 2007

The address discharge characteristics by the various scan-low and common-bias voltages are investigated based on measured address discharge time lags and $V_t$ close-curve analysis. The scan-low voltages are changed under the same voltage difference between the X and Y electrodes during an address period. As the voltage difference between the scan and address electrodes is increased during an address period, the address discharge time lag is shortened but the background luminance is increased. It is found that the improved address discharge characteristics is caused by the effect of the higher external applied voltage during an address period than the accumulated wall charges during a reset period and the high background luminance can be prevented by applying an address-bias voltage during a rising-ramp period and low reset voltage.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.4
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• pp.332-336
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• 2000

We have developed a novel vertical-alignment(VA) -$\pi$ cell mode that provides a wide viewing angle and fast response times for nematic liquid crystal(NLC) with negative dielectric anisotropy on a homeotropic polymide(PI) surfaces. Good voltage-transmittance curves and low driving voltages were achieved with the new VA-$\pi$ cell mode without a negative compensation film. Iso-viewing angle characteristics using the new VA-$\pi$ cell mode without a negative compensation film was also successfully observed. As well a fast response time of 31.7 ms for a new VA-$\pi$ mode was measured. Consequently the iso-viewing angel fast response time and low driving voltage characteristics using a VA-$\pi$ cell can be achieved.