Browse > Article

Bandgap Voltage Reference Circuit Design Technology Suitable for Driving Large OLED Display Panel  

Moon, Jong Il (Department of Electronics Engineering, Gachon University)
Cho, Sang Jun (Department of Electronics Engineering, Gachon University)
Cho, Eou Sik (Department of Electronics Engineering, Gachon University)
Nam, Chul (Silicon Harmony Co., Ltd)
Kwon, Sang Jik (Department of Electronics Engineering, Gachon University)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.2, 2018 , pp. 53-56 More about this Journal
Abstract
In this paper, a CMOS bandgap voltage reference that is not sensitive to changes in the external environment is presented. Large OLED display panels need high supply voltage. MOSFET devices with high voltage are sensitive to the output voltage due to the channel length modulation effect. The self-cascode circuit was applied to the bandgap reference circuit. Simulation results show that the maximum output voltage change of the basic circuit is 77mV when the supply voltage is changed from 10.5V to 13.5V, but the proposed circuit change is improved to 0.0422mV. The improved circuit has a low temperature coefficient of $9.1ppm/^{\circ}C$ when changing the temperature from $-40^{\circ}C$ to $140^{\circ}C$. Therefore, the proposed circuit can be used as a reference voltage source for circuits that require a high supply voltage.
Keywords
Bandgap Voltage Reference; Self-cascode; OLED Driving Circuit;
Citations & Related Records
연도 인용수 순위
  • Reference
1 Leung K. N., and Mok, K. T., "A sub-1-V $15-ppm/^{\circ}C$ CMOS bandgap voltage reference without requiring low threshold voltage device," IEEE J. Solid-State Circuits, Vol. 37, No. 4, pp.526-529, 2002.   DOI
2 Malcovati, P., Maloberti, F,. Pruzzi, M., and Fiocchi, C., "Curvature-compensated BiCMOS bnadap with 1-V supply voltage," IEEE J. Solid-State Circuits, Vol. 36, No. 7, pp. 1076-1081, 2001.   DOI
3 Banba, H., Shiga, H., Umezawa, A., Miyaba, T., Tanzawa, T., Atsumi, S., and Sakui, K., "A CMOS bandgap voltage reference circuit with sub-1-V operation," IEEE J. Solid-State Circuits, Vol. 34, No. 5, pp. 670-674, 1999.   DOI
4 Giustolisi, G., "A low-voltage low-power voltage reference based on subthreshold MOSFETs," IEEE J. Solid-State Circuits, Vol. 38, No. 1 pp. 151-154, 2003.   DOI
5 Yuki, N., and Hiroki, A., "Gate voltage dependence of channel length modulation for 14 nm FinFETs," IEEE International Meeting for Future of Electron Devices, Kansai, 2016.
6 Zeki, A., and Kuntman, H., "Accurate and high output impedance current mirror suitable for CMOS current output stages," IEEE Electronics Letters, Vol. 33, pp. 1042-1043, 1997.   DOI
7 Chen, H. M., Lee, C. C., Jheng, S. H., Chen, W. C., and Lee, B. Y., "A Sub-1 $ppm/^{\circ}C$ Precision Bandgap Reference With Adjusted-Temperature-Curvature Compensation," IEEE Circuit and Systems Society, Vol. 64, pp. 1308-1317, 2017.
8 G-Montoro, G., Schneider, M. C., and Loss, I. J. B., "Series-Parallel Association of FET's for High Gain and High Frequency Applications,"IEEE J. Solid State Circuits, Vol. 29, No. 9, pp 1094-1101, 1994.   DOI