• Journal of the Korean BIBLIA Society for library and Information Science
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• v.33 no.2
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• pp.33-54
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• 2022

This study identified the perceptions of library staff by type of library week through a survey and sought content that the library community should review to revitalize the legal library day and library week in the future. As a result of the analysis, it was found that the library staff's experience of participating in the library week and satisfaction with the event support of the host organization were low. In addition, it was found that awareness of the legal library day and library week, which will be implemented from 2023, is quite low. There were many opinions about the national publicity of the library and sufficient budget support for the event as a focus for the promotion of Library Day and Library Week in the future. In order to effectively promote the legal library week in the future through an awareness survey of library staff, various efforts are made to improve the awareness of the library community, cooperation with other library types to induce participation in various types of institutions, and the formation of a promotion committee within the association for each type of library, and use of various media It was confirmed that active media publicity and securing budget were necessary.

• Atmosphere
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• v.26 no.2
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• pp.301-319
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• 2016

The evolutionary process of the polar low, which caused the heavy snowfall in the East Coast area on 11~12 February 2011, was investigated to describe in detail using synoptic weather charts, satellite imageries, and ERA (European Centre for Medium-Range Weather Forecasts Re-Analysis) -Interim reanalysis data. It was revealed that 1) the polar low was generated over the sea near Busan where a large cyclonic shear in the inverted trough branched from the parent low existed, 2) during the developing and mature stages, there was a convectively unstable region in the lower layer around the polar low and its south side, 3) the polar low was developed in the region where the static stability in the 500~850 hPa layer was the lowest, 4) the result from the budget analysis of the vorticity equation indicated that the increase in the vorticity at the lower atmosphere, where the polar low was located, was dominated mainly by the stretching term, 5) the warm core structure of the polar low was identified in the surface-700 hPa layer during the mature stage, 6) there was a close inverse relationship between a development of the polar low and the height of the dynamic tropopause over the polar low, and 7) for generation and development of the polar low, large-scale circulation systems, such as upper cold low and its combined short wave trough, major low (parent low), and polar air outbreak, should be presented, indicating that the polar low has the nature of the baroclinic disturbance.

• Journal of Satellite, Information and Communications
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• v.2 no.2
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• pp.22-28
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• 2007

Spectrum spreading, in its general form, can be conceived as an artificial expansion of the signal bandwidth with respect to the minimum Nyquist band required to transmit the desired information. Spreading can be functional to several objectives, including resilience to interference and jammers and reduction of power spectral density levels. In the paper, signal spreading is manly used for increasing the received energy, thus satisfying link budget constraints, for terminals with low aperture antennas, without increasing the transmitted EIRP. As a matter of fact, in many mobile scenarios, even when MODCOD configurations with very low spectral efficiency (i.e. QPSK-1/4) in DVB-S2 standard, are used, the link budget cannot be closed. Spectrum spreading has been recently proposed as a technique to improve system performance without introducing additional MODCOD configurations under the constraint of fixed power spectrum density level at the transmitter side. To this aim, the design of spectrum spreading techniques shall keep into consideration requirements such as spectrum mask, physical layer performance, link budget, hardware reuse, robustness, complexity, and backward compliance with existing commercial equipments. The proposed implementation allows to fully reuse the standard DVB-S2 circuitry and is inserted as an 'inner layer' in the standard DVB-S2 chain.

• The KIPS Transactions:PartA
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• v.16A no.3
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• pp.189-198
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• 2009

The traditional interrupt-based protocol processing at end hosts has two priority-inversion problems. First, low-priority packets may interrupt and delay high-priority process executionssince interrupts have the highest priority in most operating systems. Second, low-priority packet may delay high priority packets when they arrive almost simultaneously since interrupt processing is performed in a FCFS (first come, first served) order. These problems can be solved by a priority-based protocol processing policy and implementation. However, general priority-based schemes commonly have the problem of starvation and cannot support the each network flow requiring the mutually exclusive QoS since the packets are processed in the FCFS order. Therefore, the priority-based schemes are not appropriate for different QoS-demanding applications. In this paper, we present a bottom-half-based approach that relies on priority- and budget-based processing. The proposed approach allows us to solve both the starvation and priority-inversion problems, and further enables effective QoS isolation between different network connections. This feature also enables bounding the protocol processing time at an end host. We finally show through experiments that the proposed approach achieves QoS isolation and control.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.168-173
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• 2003

Recently, according to the rapid progress in Flat-panel-display industry, there has been a growing interest in the poly-Si process. Compared with a-Si, poly-Si offers significantly high carrier mobility, so it has many advantages to high response rate in Thin Film Transistors (TFT's). We have investigated a new process for the high temperature Solid Phase Crystallization (SPC) of a-Si films without any damages on glass substrates using thin film heater. because the thin film heater annealing method is a very rapid thermal process, it has very low thermal budget compared to the conventional furnace annealing. therefore it has some characteristics such as selective area crystallization, high temperature annealing using glass substrates. A 500 $\AA$-thick a-Si film was crystallized by the heat transferred from the resistively heated thin film heaters through $SiO_2$ intermediate layer. a 1000 $\AA$-thick $TiSi_2$ thin film confined to have 15 $\textrm{mm}^{-1}$ length and various line width from 200 to 400 $\mu\textrm{m}$ was used as the thin film heater. By this method, we successfully crystallized 500 $\AA$-thick a-Si thin films at a high temperature estimated above $850^{\circ}C$ in a few seconds without any thermal deformation of g1ass substrates. These surprising results were due to the very small thermal budget of the thin film heaters and rapid thermal behavior such as fast heating and cooling. Moreover, we investigated the time dependency of the SPC of a-Si films by observing the crystallization phenomena at every 20 seconds during annealing process. We suggests the individual managements of nucleation and grain growth steps of poly-Si in SPC of a-Si with the precise control of annealing temperature. In conclusion, we show the SPC of a-Si by the thin film heaters and many advantages of the thin film heater annealing over other processes

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.561-564
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• 2004

The motion estimation which requires huge computation consumes large power in a video encoder. Although a number of fast-search algorithms are proposed to reduce the power consumption, the smaller the computation, the worse the performance they have. In this paper, we propose an architecture that a low energy management scheme can be applied with several fast-search algorithm. In addition. we show that ECVH, a software scheduling scheme which dynamically changes the search algorithm, the operating frequency, and the supply voltage using the remaining slack time within given power-budget, can be applied to the architecture, and show that the power consumption can be reduced.

• Journal of Electrical Engineering and Technology
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• v.8 no.6
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• pp.1497-1502
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• 2013

Recently, the junctionless (JL) transistors realized by a single-type doping process have attracted attention instead of the conventional metal-oxide-semiconductor field-effect transistors (MOSFET). The JL transistor can overcome MOSFET's problems such as the thermal budget and short-channel effect. Thus, the JL transistor is considered as great alternative device for a next generation low standby power silicon system. In this paper, the JL FinFET was simulated with a three dimensional (3D) technology computer-aided design (TCAD) simulator and optimized for DC characteristics according to device dimension and doping concentration. The design variables were the fin width ($W_{fin}$), fin height ($H_{fin}$), and doping concentration ($D_{ch}$). After the optimization of DC characteristics, RF characteristics of JL FinFET were also extracted.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.1
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• pp.1-10
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• 2007

In recent few years, low-power electronics has been a leading drive for technology developments nourished by rapidly growing market share. Mobile DRAM, as a fundamental block of hand-held devices, is now becoming a product developed by limitless competition. To support application specific mobile features, various new power-reduction schemes have been proposed and adopted by standardization. Tightened power budget in battery-operated systems makes conventional schemes not acceptable and increases difficulty of the circuit design. The mobile DRAM has successfully moved down to 1.5V era, and now it is about to move to 1.2V. Further voltage scaling, however, presents critical problems which must be overcome. This paper reviews critical issues in mobile DRAM design and various circuit schemes to solve the problems. Focused on analog circuits, bitline sensing, IO line sensing, refresh-related schemes, DC bias generation, and schemes for higher data rate are covered.

• ETRI Journal
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• v.25 no.4
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• pp.247-252
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• 2003

This paper presents results from experiments on laser-annealed SiGe-selective epitaxial growth (LA-SiGe-SEG). The SiGe-SEG technology is attractive for devices that require a low band gap and high mobility. However, it is difficult to make such devices because the SiGe and the highly doped region in the SiGe layer limit the thermal budget. This results in leakage and transient enhanced diffusion. To solve these problems, we grew in situ doped SiGe SEG film and annealed it on an XMR5121 high power XeCl excimer laser system. We successfully demonstrated this LA-SiGe-SEG technique with highly doped Ge and an ultra shallow junction on p-type Si (100). Analyzing the doping profiles of phosphorus, Ge compositions, surface morphology, and electric characteristics, we confirmed that the LA-SiGe-SEG technology is suitable for fabricating high-speed, low-power devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.109-110
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• 2005

We have suggested sputtered W-C-N thin film for preventing thermal budget between semiconductor and metal. These results show that the W-C-N thin film has good thermal stability and low resistivity. In this study we newly suggested sputtered W-B-C-N thin diffusion barrier. In order to improve the characteristics, we examined the impurity behaviors as a function of nitrogen gas flow ratio. This thin film is able to prevent the interdiffusion during high temperature (700 to $1000^{\circ}C$) annealing process and has low resistivity ($\sim$200$\mu{\Omega}-cm$). Through the analysis of X-Ray diffraction, resistivity and XPS, we studied structure behavior of W-B-C-N diffusion barrier.