• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.372-377
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• 2003

To realize a high integrated flash memory utilizing SONOS memory devices, the NOR type ITC(one Transistor Cell) SONOS flash arrays are fabricated and characterized. This SONOS flash arrays with the common source lines are designed and fabricated by conventional 0.35$\mu\textrm{m}$ CMOS process. The thickness of ONO for memory cells is tunnel oxide of 34${\AA}$, nitride of 73${\AA}$ and blocking oxide of 34${\AA}$ . To investigate operating characteristics, CHEI(Channel Hot Electron Injection) method and bit line method are selected as the program and 4he erase operation, respectively. The disturbance characteristics ,according to the program/erase/read cycling are also examined. The degradation characteristics are investigated and then the reliability of SONOS flash memory is guaranteed.

• Journal of IKEEE
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• v.25 no.4
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• pp.774-777
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• 2021

In this paper, we analyzed the gate controllability of 3D NAND Flash Memory with Charge Trap Flash using Ferroelectric (CTF-F) structure. HfO₂, a ferroelectric material, has a high-k characteristic besides polarization. Due to these characteristics, gate controllability is increased in CTF-F structure and on/off current characteristics are improved in Bit Line(BL). As a result of the simulation, in the CTF-F structure, the channel length of String Select Line(SSL) and Ground Select Line(GSL) was 100 nm, which was reduced by 33% compared to the conventional CTF structure, but almost the same off-current characteristics were confirmed. In addition, it was confirmed that the inversion layer was formed stronger in the channel during the program operation, and the current through the BL was increased by about 2 times.

• Journal of the Korean Mathematical Society
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• v.47 no.4
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• pp.767-788
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• 2010

In this paper, we propose two limited memory BFGS algorithms with a nonmonotone line search technique for unconstrained optimization problems. The global convergence of the given methods will be established under suitable conditions. Numerical results show that the presented algorithms are more competitive than the normal BFGS method.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.950-953
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• 1999

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2004.05a
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• pp.167-171
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• 2004

The Spar platform with deep draft is characterized as effective structure in extreme wave condition, which has larger natural period than that of waves in sea. In this paper, the time simulation of motion responses of Spar with catenary mooring line is presented in irregular waves. The memory effect is modeled by added mass at infinite frequency and convolution integrals in terms of wave damping coefficients. The added mass, wave damping coefficients and wave exciting forces are obtained from three-dimensional panel method in the frequency domain. The motion equations are consisted of forces for inetia, memory effect, hydrostatic restoring, wave exciting and mooring line. The forces of mooring line are modeled as quasi-static catenary cable.

• Journal of the Society of Naval Architects of Korea
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• v.41 no.5
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• pp.1-7
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• 2004

The Spar platform with deep draft is characterized as effective structure in extreme wave condition, which has larger natural period than that of waves in sea. In this paper, the time domain simulation of motion responses of Spar with catenary mooring line is presented in irregular waves. The memory effect is modeled by added mass at infinite frequency and convolution integrals in terms of wave damping coefficients. The added mass, wave damping coefficients and wave exciting forces are obtained from three-dimensional panel method in the frequency domain. The motion equations are consisted of forces for inertia, memory effect, hydrostatic restoring, wave exciting and mooring line. The forces of mooring line are modeled as quasi-static catenary cable.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.67-71
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• 2003

A hot press method was used to create the optimal fabrication condition for a Shape Memory Alloy(SMA) composite. The bonding strength between the matrix and the reinforcement within the SMA composite by the hot press method was more increased by cold rolling. In this study, the objective was to develop an on-line monitoring system in order to prevent the crack initiation and propagation by shape memory effect in SMA composite. Shape memory effect was used to prevent the SMA composite from crack propagation. For this system an optimal AE parameter should be determined according to the degree of damage and crack initiation. When the SMA composite was heated by the plate heater attached at the composite, the propagating cracks could be controlled by the compressive force of SMA.

• Proceedings of the IEEK Conference
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• 2002.07c
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• pp.1555-1557
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• 2002

We have investigated the precharge type sense amplifier, it is suitable fur voltage sensing in a NOR type single transistor ferroelectric field effect transistor (1T FeFET) memory read operation. The proposed precharge type sense amplifier senses the bit line voltage of 1T FeFET memory. Therefore, the reference celt is not necessary compared to current sensing in 1T FeFET memory, The high noise margin is wider than the low noise margin in the first inverter because requires tile output of precharge type sense amplifier high sensitivity to transition of input signal. The precharge type sense amplifier has very simple structure and can sense the bit line signal of the 1T FeFET memory cell at low voltage.

• Journal of Oriental Neuropsychiatry
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• v.20 no.1
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• pp.43-57
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• 2009

Objectives : This experiment was designed to investigate the effect of the Hwanso-dan hot water extract & ultra-fine powder on microglia and memory deficit model Methods : The effects of the Hwanso-dan hot water extract on expression of IL-l${\beta}$, IL-6, TNF-${\alpha}$ mRNA and production of IL-l${\beta}$, IL-6, TNF-${\alpha}$ in BV2 microglial cell line treated by lipopolysacchaide were investigated. The effects of the Hwanso-dan hot water extract & ultra-fine powder on the behavior of the memory deficit mice induced by scopolamine and uric acid & AChE in serum of the memory deficit mice induced by scopolamine were investigated. Results : 1. The Hwanso-dan hot water extract suppressed the expression of IL-l${\beta}$, IL-6, TNF-${\alpha}$ mRNA in BV2 microglial cell line treated by lipopolysacchaide. 2. The Hwanso-dan hot water extract suppressed the production of IL-l${\beta}$, IL-6, TNF-${\alpha}$ in BV2 microglial cell line. 3. The Hwanso-dan hot water extract & ultra-fine powder decreased uric acid and AChE significantly in the serum of the memory deficit mice induced by scopolamine. 4. The Hwanso-dan hot water extract & ultra-fine powder groups showed significantly inhibitory effect on the scopolamine${\sim}$induced impairment of memory in the experiment of Morris water maze. Conclusions : This experiment shows that the Hwanso-dan hot water extract & ultra-fine powder might be effective for the prevention and treatment of Memory deficit disease. Investigation into the clinical use of the Hwanso-dan hot water extract & ultra-fine powder for Alzheimer's disease is suggested for future research.

• Journal of Korea Multimedia Society
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• v.23 no.2
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• pp.293-300
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• 2020

Since the communication networks like the Internet collapses at disaster and calamity sites, a maintenance system that can be operated offline is required for the maintenance of various facilities. In this paper, we propose a system that memory tags attached on the facilities may transmit the emergency manual to a smart-phone, and the smart phone displays it off-line. The main issue is to design low energy mode memory tags. This study presents two kinds of methods and analyzes each's energy consumption mode. The first one is to develop memory tags by using one chip, and the next one is to design memory tags by forming multi-modules. Both ways show proper application fields under the low energy mode. This research selects the off-line maintenance system by using one chip design, and proposes the direction of contents for enhancing the effectiveness of the system. And we expect that this memory tags will be valuable for disaster scenes as well as battle fields.