Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Random Access Memory utilizing Spin Tunneling Giant Magnetoresistance Effect

스핀 터널링 거대자기저항 효과를 이용한 랜덤 엑세스 메모리

  • 박승영 (숭실대학교 정보통신전자공학부) ;
  • 최연봉 (숭실대학교 정보통신전자공학부) ;
  • 조순철 (숭실대학교 정보통신전자공학부)
  • Published : 1999.06.01
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Abstract

Spin tunneling giant magnetoresistance effect was studied to utilize in the application of random access memory. Ferromagnetic/Insulator/Ferromagnetic films were sputtered on glass substrates and perpendicular current was applied. Measurements of magneto- resistance of the junction showed 8.6% of MR ratio. Voltage output depends on the magnetization directions of the write line and read line, thus enabling the system to be used as a random access memory

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