• Progress in Superconductivity and Cryogenics
• /
• v.26 no.1
• /
• pp.14-19
• /
• 2024

In this study, we explore the anisotropy of electron-phonon coupling (EPC) constant in epitaxially grown MgB₂ films on c-axis oriented Al₂O₃, examining its correlation with the critical temperature (T_c) and local structural disorder assessed through polarized Raman scattering. Analysis of the polarized Raman spectra reveals angle-dependent variations in the intensity of the phonon spectra. The Raman active mode originating from the boron plane, along with two additional phonon modes from the phonon density of states (PDOS) induced by lattice distortion, was distinctly observed. Persistent impurity scattering, likely attributed to oxygen diffusion, was noted at consistent frequencies across all measurement angles. The EPC values derived from the primary Raman active phonon do not significantly vary with changing observation angles, followed by that the T_c values calculated using the Allen and Dynes formula remain relatively constant across all polarization angles. Although the E_2g phonon mode plays a crucial role in the EPC mechanism, the determination of T_c values in MgB₂ involves not only electron-E_2g coupling but also contributions from other phonon modes.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.06a
• /
• pp.7-8
• /
• 2011

Basically, the lattice mismatch between film and substrate can make those BiFeO3(BFO) films distorted with strain structure. BFO phase can be stabilized on LaAlO3(LAO) represents the example of a multiferroic with giant axial ratio. Its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion and related to the rotation of the oxygen octahedra. In this study, we show that phases with a tetragonal-like epitaxial BFO films can indeed be ferroelectric and also can be stabilized via epitaxial growth onto LAO. Recent reports on epitaxial BFO films show that the crystal structure changes from nearly rhombohedral ("R-like") to nearly tetragonal("T-like") at strains exceeding approximately -4.5%, with the "T-like" structure being characterized by a highly enhanced c/a ratio. While both the "R-like" and the "T-like" phases are monoclinic, our detailed x-ray diffraction results reveal asymmetry change from MA and MC type, respectively. By applying additional strain or by modifying the unit cell volume of the film by substituting Ba for Bi, the monoclinic distortion in the "T-like" MC phase is reduced, i.e. the system approaches a true tetragonal symmetry. There are two different M-H loops for $Bi_{1-x}Ba_xFeO_{3-{\delta}}$(BBFO) and BFO films on SrTiO3(STO) & LAO substrates. Along with the ferroelectric characterization, these magnetic data indicate that the BFO phase stabilized on LAO represents the first example of a multiferroic with giant axial ratio. However, there is a significant difference between this phase and other predicted ferroelectrics with a giant axial ratio: its crystal structure is not strictly tetragonal, but tetragonal with a slight monoclinic distortion. Therefore, in going from bulk to highly-strained films, a phase sequence of rhombohedral(R)-to-monoclinic ["R-like" MA-to-monoclinic, "T-like" MC-to-tetragonal (T)] is observed. This sequence is otherwise seen only near morphotropic phase boundaries in lead-based solid-solution perovskites (i.e. near a compositionally induced phase instability), where it can be controlled by electric field, temperature, or composition. Our results show that this evolution can occur in a lead-free, stoichiometric material and can be induced by stress alone. Those major results are summarized as follows ; 1) Ba-doping increases the unit cell volume, 2) BBFO on LAO can be fully strained up to x=0.08 as a strain limit (Fig. 1), 3) P(E) & M(H) properties can be tuned by the variation of composition, strain, and film thickness.

• Journal of the Korean Association of Geographic Information Studies
• /
• v.20 no.1
• /
• pp.137-151
• /
• 2017

The space between urban buildings becomes a waterway during rain events and requires a boundary condition in numerical calculations on grids to separate overland storm flows from building areas. Minimization of the building data distortion as a boundary condition is a necessary step for generating accurate calculation results. A building generalization is used to reduce the distortion of building shapes and areas during a raster conversion. The objective of this study was to provide the appropriate threshold value for building generalization and grid size in a numerical calculation. The impact of building generation on the connectivity of urban storm waterways were analyzed for a general residential area. The building generalization threshold value and the grid size for numerical analysis were selected as the independent variables for analysis, and the number and area of sinks were used as the dependent variables. The values for the building generalization threshold and grid size were taken as the optimal values to maximize the building area and minimize the sink area. With a 3 m generalization threshold, sets of $5{\times}5m$ to $10{\times}10m$ caused 5% less building area and 94.4% more sink area compared to the original values. Two sites representing general residential area types 2 and 3 were used to verify building generalization thresholds for improving the connectivity of storm waterways. It is clear that the recommended values are effective for reducing the distortion in both building and sink areas.

• Journal of the Korean Vacuum Society
• /
• v.17 no.1
• /
• pp.51-57
• /
• 2008

we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.36 no.3
• /
• pp.249-254
• /
• 2023

La_0.7-xCe_xSr_0.3MnO₃ specimens were fabricated by a solid state reaction method and structural and electrical properties with variation of Ce⁴⁺ contents were measured. All specimens exhibited a polycrystalline rhombohedral crystal structure, and the (110) peaks were shifted to low angle side with increasing the amount of Ce⁴⁺ contents. As Ce⁴⁺ ions with different ion radii and charges are substituted with La³⁺ ions, electrical properties are thought to be affected by changes in the double exchange interaction between Mn³⁺-Mn⁴⁺ ions due to distortion of the unit lattice, a decrease in oxygen vacancy concentration, and an increase in lattice defects. Resistivity gradually decrease as the amount of Ce⁴⁺ added increased, and negative temperature coefficient of resistance (NTCR) properties were shown in all specimens. In the La_0.5Ce_0.2Sr_0.3MnO₃ specimens, electrical resistivity, TCR and B-value were 31.8 Ω-cm, 0.55%/℃ and 605 K, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.1
• /
• pp.107-112
• /
• 1999

The ZnSe/GaAs epilayers were grown by RF reactive sputtering. In order to obtain the optimum condition of the growth, we have studied the dependence of Ar pressure, input power of sputter, temperature of substrate, and the distande between substrate and target. Through the observation of the grown epilayer via electronic microscope, we confirmed that the layer's surface was uniform and the boundary of the substrate and the layer was well defined. The defotmation of lattice distortion and the distortion ratio were obtained by DCRC measurements. From mrasurements of photoluminescence, in the ZnSe/GaAs sample without injection of $N_2$gas, we found that the intensity of bound exciton $I_2$is stronger than that of $I_1$and the bound exiton $I_1$represents the deep acceptor level, $I_1\;^d$. On the other hand, in the ZnSe/GaAs sample with injection of$N_2$gas, the peak of$I_1$ was much higher than that of the $I_2$and the half width appeared to be narrow. We concluded that the p-type of ZnSe/GaAs epilayer was grown successfully, because of stronger peak of the bound exciton $I_1$due to the $N_2$dopping.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.18 no.12
• /
• pp.1994-2000
• /
• 1993

A new lattice structure using decision feedback and augmented prediction for estimating and suppressing the narrowband interference is presented. The performance of the proposed interference canceller is compared to the conventional interference cancellation filter. The reference signal of the interference canceller is formed by using the chip decisions, which is correlated with the narrowband interference components of the received signal. The decision feedback technique reduce the distortion of the desired signal which is introduced by the interference canceller through the use of feedback chip decisions. And by linear prediction of the error signal, the residual interference component of can be eliminated, Using this unconteminated error signal to update the adaptive filter coefficients, the performance of the rejection can be improved. In the simulation, it is assumed that the processing gains are 7 and 15, signal to interference ratio is -10[dB], and 5% interference band. The results show that the BER performance of the proposed filter structure is improved by 1~3dB.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.9 no.2
• /
• pp.162-167
• /
• 1999

GaN epilayers deposited by the OMVPE method on sapphires with 3 different surface orientations were investigated by TEM and their difference in mucrostructure were compared with each other. GaN epilayers were grown on the all three kinds of sapphire substrates; however, the best interfacial state and crystallinity were observed in the specimen using a {0001} substrate The density of defects in GaN epilayers on {0001} substrates was also less than others. No buffer layer was found at the interfaces of all the specimens; however, it was observed that the region which shows lattice distortion at the interface was only a few nonameter wide. Accordingly, TEM investigation revealed that GaN epilayers having some internal defects could be grown on sapphire {1120} and {1102} planes without a buffer layer, and the hetero-epitaxial GaN films were obtained from the specimen using {0001} substrates with the microstructural point of view.

• Korean Journal of Materials Research
• /
• v.28 no.10
• /
• pp.539-543
• /
• 2018

We report the structural, morphological and magnetic properties of the $Ni_{70}Mn_{30}$ alloy prepared by Planetary Ball Mill method. Keeping the milling time constant for 30 h, the effect of different ball milling speeds on the synthesis and magnetic properties of the samples was thoroughly investigated. A remarkable variation in the morphology and average particle size was observed with the increase in milling speed. For the samples ball milled at 200 and 300 rpm, the average particle size and hence magnetization were decreased due to the increased lattice strain, distortion and surface effects which became prominent due to the increase in the thickness of the outer magnetically dead layer. For the samples ball milled at 400, 500 and 600 rpm however, the average particle size and hence magnetization were increased. This increased magnetization was attributed to the reduced surface area to volume ratio that ultimately led to the enhanced ferromagnetic interactions. The maximum saturation magnetization (75 emu/g at 1 T applied field) observed for the sample ball milled at 600 rpm and the low value of coercivity makes this material useful as soft magnetic material.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.14 no.6
• /
• pp.558-566
• /
• 2003

We fabricated thick film monopole antennas using Li-doped BiNbO$_4$ ceramics and investigated their electrical properties as a function of the Li-doping concentration. Compared with undoped BiNbO$_4$ ceramics, addition of Li$_2$CO$_3$ improved dielectric constant by increasing of ionic polarization, but reduced quality value by increasing of lattice distortion. Antenna properties like gain, bandwidth and radiation patterns were also greatly affected by the addition of Li$_2$CO$_3$. With increasing amount of Li$_2$CO$_3$, the bandwidth of ceramic monopole antenna was increased to 81.7 %, but the gain was reduced to -10.03 dBi. Also radiation patterns were so distorted and showed low dB value by increasing of dielectric loss.