• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.5
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• pp.270-277
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• 2000

A new Lateral Trench-MOS Bipolar-Mode Field-Effect Transistor(LTMBMFET) is proposed and verified by MEDICI simulation. By using a trench MOS structure, the proposed device can enhance the current gain without sacrificing other device characteristics such as the breakdown voltage. The channel region of the proposed device is formed between the trench MOS structure. So the effect of the substrate voltage is negligible when compared with the conventional device which has a channel region between the gate junction and the buried oxide layer.

• Korean Journal of Materials Research
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• v.28 no.8
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• pp.440-444
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• 2018

An effective cleaning method for Ni removal in Ni-induced lateral crystallization(Ni-MILC) poly-Si TFTs and their electrical properties are investigated. The HCN cleaning method is effective for removal of Ni on the crystallized Si surface, while the nitric acid treatment results decrease by almost two orders of magnitude in the Ni concentration due to effective removal of diffused Ni mainly in the poly-Si grain boundary regions. Using the HCN cleaning method after the nitric acid treatment, re-adsorbed Ni on the Si surfaces is effectively removed by the formation of Ni-cyanide complexions. After the cleaning process, important electrical properties are improved, e.g., the leakage current density from $9.43{\times}10^{-12}$ to $3.43{\times}10^{-12}$ A and the subthreshold swing values from 1.37 to 0.67 mV/dec.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1991.10a
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• pp.102-107
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• 1991

This study a reliability based design criteria for the Pile foundation, Which is common type of bridge founfation, and also proposes the theoretical bases limit state equations of stalbility analvsis of Pile foundation and the uncertainty measuring algorithms of each equation are also derived by MFOSM using the pile reations of displacement method, Terzaghi's bearing capacity formula, and chang's lateral load formula. The Level of uncertainties comesponding to these algorithms are proposed approprite values considering our actuality. It may be asserted that the proposed LRFD reliability based design criteria for the pile foundation may have to be incorporated in to the current Highway Bridge Design codes as a design provision corresponding to the USD(or LFD) provisions of the current Highway Bridge Design Code.

• Journal of the Korea Concrete Institute
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• v.11 no.5
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• pp.61-68
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• 1999

Confinement is one of the major concepts for bond of reinforcing steel to concrete. Cover distance, and lateral reinforcement are the key factors for current provisions for development and splices of reinforcement. However, the current provisions still being complicated to calculate major variables need to be developed in the process of design. In this study, an experimental work was performed to examine the behavior of bond using beam end specimens. The test results and previous available data are analyzed to isolate the effects of confinement on bond strength. From this reevaluation, new provisions for development and splice of reinforcement are proposed. The provisions also propose some limits for confinement index. The new provisions will help engineers to decide easily the simple but conservative way for manual calculations or the exact approach for computerized design.

• MALSORI
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• no.56
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• pp.75-101
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• 2005

This study investigated the articulatory and acoustic correlates of Korean /1/. In particular, direct comparison between Korean /1/ and English /1/ was made to evaluate the current assumption about Korean /1/ such that Korean /1/ is phonetically similar to English clear /1/. The present study revealed that Korea /1/ is different from English /1/ in several properties. First, F2 for Korean /1/ is around 600-700 Hz higher than F2 for English /1/. The overall higher F2 for Korean /1/ is attributed to the fact that Korean /1/ involves tongue body raising while it lacks a dorsal gesture. Second, F3 value for Korean /1/ becomes significantly lower when the preceeding vowel is a back vowel. This kind of variable F3 pattern was not observed in English /1/. The current study relates the F3 lowering to the retroflexion of Korean /1/ in the back vowel context.

• Wind and Structures
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• v.7 no.3
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• pp.187-202
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• 2004

Wind tunnel experiments are often performed for the identification of aeroelastic parameters known as flutter derivatives that are necessary for the prediction of flutter instability for flexible structures. Experimental determination of all the eighteen flutter derivatives for a section model facilitates complete understanding of the physical mechanism of flutter. However, work in the field of identifying all the eighteen flutter derivatives using section models with all three degree-of-freedom (DOF) has been limited. In the current paper, all eighteen flutter derivatives for a streamlined bridge deck and an airfoil section model were identified by using a new system identification technique, namely, Iterative Least Squares (ILS) approach. Flutter derivatives of the current bridge and the Tsurumi bridge are compared. Flutter derivatives related to the lateral DOF have been emphasized. Pseudo-steady theory for predicting some of the flutter derivatives is verified by comparing with experimental data. The three-DOF suspension system and the electromagnetic system for providing the initial conditions for free-vibration of the section model are also discussed.

• Journal of the Korean Ceramic Society
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• v.54 no.1
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.77-80
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• 2002

In this paper, InP-based HBTs have been optimally designed by numerical simulation and fabricated by the self-aligned process. The structure of HBT was designed in terms of the current gain*f$_{max}$ for the base and f$_{T}$*f$_{max}$ for the collector. The designed structure produced the current gain of about 50 and the cutoff frequency and the maximum oscillation frequency of 87GHz and 2940Hz respectively. In addition, we present a study of the vertical and lateral etching of InP with the mask sides parallel to the principal crystallographic axes, [0101 and (001). This etching characteristics arc used to fabricate self-aligned HBT structures with reduced parasitic effects.s.s.s.

• The Magazine of the IEIE
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• v.24 no.6
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• pp.38-49
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• 1997

0.4mm Resign Rule의 Super Low Power Dissipation, Low Voltage. Operation-5- Full CMOS SRAM Cell을 개발하였다. Retrograde Well과 PSL(Poly Spacer LOCOS) Isolation 공정을 사용하여 1.76mm의 n+/p+ Isolation을 구현하였으며 Ti/TiN Local Interconnection을 사용하여 Polycide수준의 Rs와 작은 Contact저항을 확보하였다. p-well내의 Boron이 Field oxide에 침적되어 n+/n-well Isolation이 취약해짐을 Simulation을 통해 확인할 수 있었으며, 기생 Lateral NPN Bipolar Transistor의 Latch Up 특성이 취약해 지는 n+/n-wellslze는 0.57mm이고, 기생 Vertical PNP Bipolar Transistor는 p+/p-well size 0.52mm까지 안정적인 Current Gain을 유지함을 알 수 있었다. Ti/TiN Local Interconnection의 Rs를 Polycide 수준으로 낮추는 것은 TiN deco시 Power를 증가시키고 Pressure를 감소시킴으로써 실현할 수 있었다. Static Noise Margin분석을 통해 Vcc 0.6V에서도 Cell의 동작 Margin이 있음을 확인할 수 있었으며, Load Device의 큰 전류로 Soft Error를 개선할수 있었다. 본 공정으로 제조한 1M Full CMOS SRAM에서 Low Vcc margin 1.0V, Stand-by current 1mA이하(Vcc=3.7V, 85℃기준) 를 얻을 수 있었다.

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.139-143
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• 1991

GRIN-SCH quantum well structured Laser Diode were fabricated using MOCVD and operated as CW at room temperature. The threshold current density of the LD with 670${\mu}{\textrm}{m}$ cavity length was 530 A/$\textrm{cm}^2$. For the ridge waveguide type index guiding structured LD with 6${\mu}{\textrm}{m}$ stripe width and 240${\mu}{\textrm}{m}$ cavity length, the threshold current was 50㎃. The maximum differential quantum efficiency was 0.95W/A when the optical output was 60mW. The lasing wavelength of QW LD was 865nm. In the L-I measurement. TE mode was superior to TM mode. From the near field pattern, single lateral mode operation was observed.